In this study, n-type doped single crystal diamonds were successfully prepared under normal temperature and pressure conditions using laser-induced doping. 248nm pulsed laser beams with nanosecond duration were irradiated on the single crystal diamond substrate immersing in an 85% phosphoric acid solution and it introduced phosphorus doping to form an n-type doped thin layer. The resistivity of the doped region significantly decreased compared to that of the single crystal diamond. After depositing a titanium electrode, the resistivity of the doped film obtained by Van der Pauw Technique was determined to be 1.3×10-6 Ω·m. Raman spectroscopy confirmed the absence of carbon or graphite phases in the laser-induced doped diamond, indicating that the enhanced conductivity was due to phosphorus incorporation.Furthermore, p-type doped single crystal diamonds were successfully prepared by introducing boron during the growth process using Microwave Plasma Chemical Vapor Deposition(MPCVD). It was demonstrated that the proposed technique can introduce impurities into single crystal diamonds to form doped conductive thin layers, which has potential applications in the field of microdevices and integrated circuits.