Deep Level Transient Spectroscopy Research Articles

Deep Levels and Electron Paramagnetic Resonance Parameters of Substitutional Nitrogen in Silicon from First Principles.

Nitrogen is commonly implanted in silicon to suppress the diffusion of self-interstitials and the formation of voids through the creation of nitrogen-vacancy complexes and nitrogen-nitrogen pairs. Yet, identifying a specific N-related defect via spectroscopic means has proven to be non-trivial. Activation energies obtained from deep-level transient spectroscopy are often assigned to a subset of possible defects that include non-equivalent atomic structures, such as the substitutional nitrogen and the nitrogen-vacancy complex. Paramagnetic N-related defects were the object of several electron paramagnetic spectroscopy investigations which assigned the so-called SL5 signal to the presence of substitutional nitrogen (NSi). Nevertheless, its behaviour at finite temperatures has been imprecisely linked to the metastability of the NSi center. In this work, we build upon the robust identification of the SL5 signature and we establish a theoretical picture of the substitutional nitrogen. Through an understanding of its symmetry-breaking mechanism, we provide a model of its fundamental physical properties (e.g., its energy landscape) based on ab initio calculations. Moreover by including more refined density functional theory-based approaches, we calculate EPR parameters (↔g and ↔A tensors), elucidating the debate on the metastability of NSi. Finally, by computing thermodynamic charge transition levels within the GW method, we present reference values for the donor and acceptor levels of NSi.

Evaluation of thermally activated defects behaviors in nitrogen-doped Czochralski silicon single crystals using deep level transient spectroscopy

Thermally activated defect behaviors in nitrogen (N)-doped Czochralski silicon (Cz-Si) single crystals were investigated using deep level transient spectroscopy and quasi-steady-state photoconductance to confirm the crystals’ applicability in insulated gate bipolar transistors (IGBTs). The thermally activated defects, which were probably N-vacancy complexes and degraded the minority carrier lifetime, were detected with extremely low densities in N-doped Cz-Si compared with N-rich floating zone Si single crystals after heat treatments at 500 °C, resulting in a high remaining value of minority carrier lifetime. The difference was assumed to come from whether vacancies were released in the Si matrix during heat treatment. For the Cz-Si, vacancies were assumed to be strongly bound with oxygen atoms with concentrations of 1017 atoms cm−3. Therefore, vacancies were not released during heat treatment, resulting in low remaining N-vacancy complex densities. N-doped Cz-Si are potential materials for IGBTs because of their low densities from thermally activated defects.

Interface-Engineered Organic Near-Infrared Photodetector for Imaging Applications.

We report a high-speed low dark current near-infrared (NIR) organic photodetector (OPD) on a silicon substrate with amorphous indium gallium zinc oxide (a-IGZO) as the electron transport layer (ETL). In-depth understanding of the origin of dark current is obtained using an elaborate set of characterization techniques, including temperature-dependent current-voltage measurements, current-based deep-level transient spectroscopy (Q-DLTS), and transient photovoltage decay measurements. These characterization results are complemented by energy band structures deduced from ultraviolet photoelectron spectroscopy. The presence of trap states and a strong dependency of activation energy on the applied reverse bias voltage point to a dark current mechanism based on trap-assisted field-enhanced thermal emission (Poole-Frenkel emission). We significantly reduce this emission by introducing a thin interfacial layer between the donor: acceptor blend and the a-IGZO ETL and obtain a dark current as low as 125 pA/cm2 at an applied reverse bias of -1 V. Thanks to the use of high-mobility metal-oxide transport layers, a fast photo response time of 639 ns (rise) and 1497 ns (fall) is achieved, which, to the best of our knowledge, is among the fastest reported for NIR OPDs. Finally, we present an imager integrating the NIR OPD on a complementary metal oxide semiconductor read-out circuit, demonstrating the significance of the improved dark current characteristics in capturing high-quality sample images with this technology.

Effect of crystal growth conditions on carrier lifetime and lattice defects in the solar absorber material ZnSnP2

We investigated the minority carrier lifetime and behavior of lattice defects in ZnSnP2 bulk crystals through experiments on carrier recombination and defect properties. Advanced deep level transient spectroscopy (DLTS) revealed that an electron trap with a short time constant at 0.2 eV below the conduction band minimum edge may contribute to the short minority carrier lifetime evaluated by time-resolved photoluminescence (TRPL). The temperature dependence of steady-state photoluminescence suggested that the carrier recombination through the electron trap was nonradiative around room temperature, which supports the fact of the short carrier lifetime and lower current density in ZnSnP2 solar cells. Previously reported theoretical calculation suggests that such a trap comes from the antisite defect of Sn from the viewpoint of the thermodynamic transition level. We, thus, prepared ZnSnP2 crystals by the solution growth method under conditions with a higher chemical potential of Zn, and we achieved the enhancement of the carrier lifetime compared to that under other growth conditions. In this case, the evaluation of the liquidus temperature and chemical potentials by a thermodynamic model indicated that the formation of Sn antisite was effectively suppressed by a lower precipitation temperature in addition to the effect of chemical potentials. Finally, we demonstrated the improvement of current density in ZnSnP2 solar cells using crystals with a longer lifetime, especially in the longer wavelength range.

Unintentional p-type conductivity in intrinsic Ge-rich SiGe/Ge heterostructures grown on Si(001)

In this work, we investigate the effective background charge density in intrinsic Si0.06Ge0.94/Ge plastically relaxed heterostructures deposited on Si(001). Hall effect measurements and capacitance–voltage profiling reveal a p-type conductivity in the nominally intrinsic layer with a hole concentration in the mid 1015 cm−3 range at temperatures between 50 and 200 K. In view of the carrier freeze out that we observe below 50 K, we attribute the origin of these carriers to the ionization of shallow acceptor-like defect states above the valence band. In addition, one dominant hole trap located at mid-gap position is found by deep level transient spectroscopy. Carrier trapping kinetics measurements can be interpreted as due to a combination of point defects, likely trapped in the strain field of extended defects, i.e., the threading dislocation.

Energy-Dependent Impact of Proton Irradiation on 4H-SiC Schottky Diodes

In this work, the impact of 200 MeV proton irradiation at a fluence of 6 × 1012 cm−2 on the forward characteristics and the breakdown behaviour of nickel (Ni) and titanium (Ti) Schottky barrier diodes is explored. An improvement in the ideality factor, reduction in the threshold voltage, and an increase in the breakdown voltage is observed post irradiation. Point defects induced by the irradiation are likely responsible for the observed effects. Deep Level transient Spectroscopy (DLTS) measurements were performed on the irradiated Schottky diodes to analyse the defects created during the irradiation and gauge their potential role in changing the diode behavior. The defects induced by the high-energy protons were compared to those formed by low-energy proton irradiation at 1.8 MeV to a fluence of 1 × 1012 cm−2. Finally, consecutive DLTS measurements were performed after a series of reverse bias anneals at low temperatures from 350-700 K to explore the annealing behaviour of the defects induced by the proton irradiations.

Effects of electric polarization and defect energy levels induced by ion irradiation on the electrical behavior of 4H-SiC Schottky barrier diodes

The effects of electric polarization and defect energy levels induced by C4+ irradiation on the electrical behavior of 4H-SiC Schottky barrier diodes (SBDs) are discussed. The parameters of the SBDs were extracted from capacitance–voltage (C–V) and current–voltage (I–V) measurements, the deep level transient spectroscopy (DLTS) was used to identify defect energy levels. In addition, the dielectric function and energy band structure of 4H-SiC were calculated using a first-principles approach to verify the enhancement of polarization and the origin of the defect energy levels. The results show that the net (donor) carrier concentration (N d) increases with the increase of irradiation fluence, which is caused by the competition between irradiation-induced defects and the polarization effect. On the one hand, Z 1/2 is determined by DLTS. It is related to the doubly negatively (2-|0) charged state of V c (carbon vacancy), which is a double acceptor. The intensity of the Z 1/2 peak increases with increasing irradiation fluence, which means that the defects caused by irradiation should reduce the N d. On the other hand, the polarization effect does exist and it becomes stronger with the increase in the irradiation fluence, which makes the N d increase. Obviously, the polarization effect induced by the irradiation is dominant for N d when the depth of ion penetration is in the shallow layer behind the metal–semiconductor (M–S) interface. Irradiation induced electron traps and an uneven distribution of positively charged centers, which can cause ln(I)-V to exhibit a non-linear component before reaching the turn-on voltage. The series resistance (R s), reverse current (I R) increase and the forward current decreases with the increase in irradiation fluence. All these show that the irradiation causes degradation of Ni/4H-SiC SBD performance.

Comparison of the effects of continuous and intermittent electron irradiation on commercial 4H-SiC Schottky barrier diodes

The radiation hardness of commercial 4H-SiC Schottky barrier diodes (STPSC1006D) has been investigated in this study. Primarily, intermittent irradiation at 0.5 Hz and continuous irradiation were analyzed and compared. Current–voltage (I–V), capacitance–voltage transform deep-level transient spectroscopy (FT-DLTS) were used to characterize the devices before and after irradiation. The devices show stability in their I–V characteristics upon irradiation. The free carrier concentration of the devices obtained from the C–V results decreased with the increasing of electron fluence. Additionally, new defects were observed after irradiation, which was the reason for the degradation in the electrical properties of the devices. The comparison of the devices irradiated intermittently and those irradiated continuous reveals that intermittent irradiation causes greater changes in electrical properties than continuous irradiation. These characteristics show the impact of STPSC1006D in space applications.

Investigation of deep defects and their effects on the properties of NiO/β-Ga2O3 heterojuncion diodes

In this study, the effect of rapid thermal annealing (RTA) on the electrical and optical properties of NiO/ β-Ga2O3 heterojunction diodes was investigated using capacitance-voltage, current-voltage, Deep Level Transient Spectroscopy (DLTS), Laplace DLTS, photoluminescence and micro-Raman spectroscopy techniques, and SILVACO-TCAD numerical simulator. The NiO is designed to be lowly-doped, allowing for the NiO full depletion at zero bias and the study of properties of β-Ga2O3 and its interface with NiO. Micro-Raman results revealed good agreement with the theoretical and experimental results reported in the literature. The photoluminescence intensity of the sample after RTA is five times higher than the fresh sample due to a rise in the density of gallium and oxygen vacancies (VGa + VO) in the annealed β-Ga2O3 samples. The current-voltage characteristics showed that annealed devices exhibited a lower ideality factor at room temperature and higher barrier height compared with fresh samples. The DLTS measurements demonstrated that the number of electrically active traps were different for the two samples. In particular, three and one electron traps were detected in fresh samples and annealed samples, respectively. SILVACO-TCAD was used to understand the distribution of the detected electron E2 trap (Ec-0.15 eV) in the fresh sample and the dominant transport mechanisms. A fairly good agreement between simulation and measurements was achieved considering a surface NiO acceptor density of about 1 × 1019 cm−3 and E2 trap depth into the surface of β-Ga2O3 layer of about 0.220 µm and the effect of the most observed Ec-0.75 eV trap level in β-Ga2O3. These results unveil comprehensive physics in NiO/β-Ga2O3heterojunction and suggest that RTA is an essential process for realizing high-performance NiO/β-Ga2O3devices.

Conducting surface layers formed by hydrogenation of O-implanted β-Ga2O3

Lightly n-type β-Ga2O3 grown by Halide Vapor Phase Epitaxy (HVPE) on heavily n-type doped β-Ga2O3 substrate was implanted with 1 MeV O ions to a fluence of 1016 cm−2. The film remained β-polymorph and showed no broadening of the x-ray rocking curve width after irradiation even though the calculated number of primary defects was very high. The implanted region was characterized by a strong compensation, likely due to the presence of a high density of split Ga vacancy acceptors. Treatment of the irradiated film in dense hydrogen plasma at 330 °C for 0.5 h led to the formation of a conducting surface layer about 0.5 µm-thick with carrier density 1017 cm−3, a suppression of the signal due to Fe acceptors in Deep Level transient Spectroscopy (DLTS) and a strong enhancement of DLTS peak caused by centers at Ec-0.74 eV (so called E2 * traps). The mechanism appears to be that hydrogen plasma treatment leads to creation of a high number of donor states due complexing of hydrogen with Ga vacancies and to passivation of Fe acceptors with hydrogen donors.

Single thermal scan digital system for deep level transient spectroscopy.

We have developed a micro-controller based Deep Level Transient Spectroscopy (DLTS) system to identify the deep-level defects in semiconductors. It consists of Arduino-Due, a capacitance meter, and interface circuits. In addition, we have also developed the algorithms needed for the entire signal processing. It is not limited to Arduino-Due but can be implemented using other micro-controllers also. We have used Arduino-Due to generate the filling pulse and monitor the capacitance, temperature, data acquisition, timing control, and signal processing. The sequence of generating the filling pulse, reading the data, and signal processing is controlled digitally rather than by analog sampling circuits and timers. The minimum pulse width generated using Arduino-Due is 50ns; the pulse width generation depends on various hardware and software parameters and their integration. The resolution in reading the data is 0.8 mV/unit. The time delays in reading the data are appropriately taken care of in the system. The whole experiment can be completed in a single temperature cycle within 2-3h. The system is simple, inexpensive, in an easy-to-use platform, and less time-consuming; minimizes possible errors; and improves accuracy. The measurements using the "micro-controller based DLTS system" are verified by fabricating (Au) gold-doped silicon (Si) p-n junction samples (Au is a well-understood defect in Si). Using the Arduino-Due based DLTS system, we calculated the energy, the capture cross section, and the concentration of trap levels. The results are in good agreement with the literature, indicating the versatility of the system.

Surface defects related to polishing cycle in ß-Ga2O3 crystals grown by floating zone

We report an investigation on ß-Ga2O3 Schottky barrier diodes performed on substrates grown by floating-zone method using structural characterization techniques (secondary-ion mass spectrometry, inductively coupled plasma-mass spectroscopy, and atomic force microscopy) and electrical measurements (current-voltage, capacitance-voltage, Hall effect, and capacitance deep-level transient spectroscopy). Four distinct electron trap levels labeled ES, E1, E2, and E3 were found in the range of 1 eV below the Ga2O3 conduction band minimum. Among them, E1, E2, and E3 show signatures similar to those reported in the literature for Czochralski and edge-defined film-fed grown ß-Ga2O3 substrates. Trap ES was found near the surface, and we could establish a link between this defect and the damage induced by the substrate polishing technique. The level related to ES was identified at ∼0.31 eV below the conduction band minimum. An energy band above 0.31 eV was also detected and is associated with states at the metal–semiconductor interface. We demonstrated that the interface states and surface deep traps are not uniformly distributed on the ß-Ga2O3 surface. Furthermore, they contribute to the reverse leakage current and the on-state conduction degradation of the diodes.

Investigations of defects in TiO2/HgTe/MoO3 heterostructures and their influence on transport properties

The need for simple-to-manufacture, solution-processable, tunable infrared active optoelectronic materials led to the development of infrared colloidal quantum dots, whose band gaps may be easily regulated by dimensional constraints resulting from the quantum confinement. Due to electronic deep-level trap states that limit effective mobility and function as effective recombination centers, nanocrystal (NC)-based optoelectronic devices still perform less well than what is predicted theoretically. The performance of NC-based optoelectronic devices can be considerably improved by identifying and passivating these defect levels. In this study, we use low-temperature I–V, C–V, C–F and the microcontroller-based deep level transient spectroscopy (DLTS) system to investigate the defect levels in the FTO/TiO2/HgTe/MoO3/Au device. The I–V measurements at low temperatures demonstrated the existence of exponential trap states, with an activation energy of 0.24 eV and a trap density of . Low-temperature C–V and C–F measurements established the existence of deep trap states. With DLTS, we have located two deep trap levels (traps 1 and 2), with energies of 0.25 and 0.46 eV, capture cross-sections and and a concentration of , respectively. The surface states at the HgTe NCs and the oxygen vacancies at the TiO2 are the leading causes of the trap levels, which are primarily present at the interface of the TiO2/HgTe heterojunction. The transport mechanism in these heterojunction devices was happening mainly through these interface trap states. Passivating these defect levels is vital to increase the device effectiveness.

Synergistic strategy of rubidium chloride regulated SnO2 and 4-tert-butyl-benzylammonium iodide passivated MAxFA1-xPbI3 for efficient mixed-cation perovskite solar cells

Nowadays, the MA-FA mixed-cation perovskite solar cells (PSCs), demonstrating much higher stability than that of single-cation MAPbI3 or FAPbI3, are still encountering a low-efficiency issue. The main reason is that there existing a lot of defects in SnO2 electron transport layers (ETLs) and perovskite absorbers. Herein, we develop a synergistic strategy of Rubidium Chloride (RbCl) doping and 4-tert-butylbenzylammonium iodide (tBBAI) passivation to fabricate high-performance MAxFA1-xPbI3 mixed-cation PSCs. The alkali halide RbCl is first selected as a novel doping additive to regulate the film properties of SnO2 and perovskites. Research shows that the negative Cl- ions can combine with uncoordinated Sn4+ ions due to their strong bonding ability, which can passivate the oxygen-vacancy-related defects and enhance the charge transport of SnO2 ETLs. Meanwhile, the doped Rb+ and Cl- ions may diffuse into perovskite lattices to promote grain growth and reduce the defects of perovskites. Besides, we employ an organic halide salt tBBAI to passivate perovskites and suppress surface defects. Results of deep level transient spectroscopy (DLTS) indicate that SnO2 and SnO2-RbCl based devices have deeper hole traps and large trap densities (ΔE = 0.92 eV, NT = 1.10 × 1016 cm−3; ΔE = 0.93 eV, NT = 2.16 × 1015 cm−3); while tBBAI-treated SnO2-RbCl-based devices own a shallower hole trap and a smaller trap density (ΔE = 0.72 eV, NT = 2.44 × 1013 cm−3); and the corresponding IPb and I(MA/FA) antisite defeats are also identified. Therefore, our synergistic strategy is effectively able to reduce the defect density and suppress the non-radiative recombination. Consequently, the best-performance MA0.85FA0.15PbI3 PSCs achieve an impressive power conversion efficiency (PCE) of 22.54% with a large open circuit voltage (Voc) of 1.16 V, which are by far the highest values of MA0.85FA0.15PbI3 mixed-cation PSCs.

Electrical Behavior of Vertical Pt/Au Schottky Diodes on GaN Homoepitaxy

Schottky barrier diodes on GaN on GaN substrates are fabricated for the purpose of material and technology characterization. The epitaxial layers are grown by MOCVD. I–V measurements as a function of the temperature in the range 80–480 K show ideality factor (n) and barrier height (ϕB) variations not following a thermionic (TE) model. Consequently, barrier height fluctuations are considered. In the temperature range 280–480 K, an average barrier height of 1.31 eV with a relatively large standard deviation (σ) of 0.15 eV is extracted using this model. The n(T) variation is also analyzed in order to extract the field sensibility of 1) the mean barrier height variation (ρ2 = −0.1) and 2) the barrier height standard deviation (ρ3 = −15 mV). The corrected Richardson plot using ϕB and σ values is linear and gives a Richardson constant of 31.5 A cm−2 K−2 close to the theoretical value of 26.4 A cm−2 K−2. For a deeper understanding of ϕB fluctuation origins, micro‐Raman mapping of the epitaxial layers and deep‐level transient spectroscopy (DLTS) are used. μ‐RS mappings show compressive strain for diodes having suffered electrical breakdown. DLTS analysis shows the presence of nine levels whose signatures are extracted and nature discussed.

Effective Suppression of Amorphous Ga2O and Related Deep Levels on the GaN Surface by High-Temperature Remote Plasma Pretreatments in GaN-Based Metal-Insulator-Semiconductor Electronic Devices.

Gallium nitride (GaN) has been considered one of the most promising materials for the next-generation power and radio-frequency electronic devices, as they can operate at higher voltage, higher frequency, and higher temperature, compared with their silicon (Si) counterparts. However, the fresh GaN surface is susceptible to the natural oxidation composed of Ga2O3, Ga2O, and other intermediate oxidation states. Moreover, the oxidized GaN surface no longer features the distinct atomic step-terrace morphology, resulting in a degraded interface when gate or passivation dielectrics are deposited without appropriate pretreatment. It is responsible for the degraded performance of GaN-based devices such as current collapse and threshold voltage instability. In this study, the proposed high-temperature (500 °C) remote plasma pretreatments (RPPs) can play a significant role in addressing the issue of the deteriorated GaN surface exposed to air. Atomic step-terrace morphology was recovered after 500 °C-RPP due to the removal of oxides and suboxides. First-principles calculations verified that Ga2O at the GaN surface leads to interface states at ∼2.9 eV (EC-E ∼ 0.4 eV) in the bandgap, which is consistent with the increase of interface states at the EC-E range of 0.4-0.9 eV measured through constant-capacitance deep-level transient spectroscopy. Meanwhile, deep interface states and surface-related current collapse are well suppressed in GaN metal-insulator-semiconductor devices. These improved properties by 500 °C-RPP are generalizable to a broader range, including pre-gate and pre-passivation treatment, of which a decent surface/interface is desirable for high-performance GaN-based devices.

Trap Characterization of Trench-Gate SiC MOSFETs Based on Transient Drain Current

The SiC/SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> interface state is one of the main factors that limit the performance and reliability of the SiC metal-oxide-semiconductor field-effect transistor (MOSFET). In this paper, we use a Bayesian deconvolution algorithm to optimize trap feature extraction based on the transient current method and improve the trap extraction accuracy. Using this method, we study the trap capture mechanism in SiC MOSFETs and mainly characterize the trap position, the trap energy level, and the capture time constant. The results obtained show that there are three different types of traps and defects, two of which are SiC interface traps at the gate-source and gate-drain interfaces, with activation energies of 0.089 eV and 0.035 eV, respectively; the third trap type is an oxide trap, and its time constant does not vary with temperature. The characterization results are verified via deep level transient spectroscopy, and the results show reasonable agreement with those obtained by the method proposed in this paper. This method can be combined with electrical stress testing in long-term reliability research to realize nondestructive characterization of the defects of SiC MOSFETs.

Radiation and Emission Phenomena in Combination

Radiation and Emission Phenomena in Combination

Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations

The lifetime of deep-ultraviolet light-emitting diodes (LEDs) is still limited by a number of factors, which are mainly related to semiconductor defects, and still need to be clarified. This paper improves the understanding of UV LED degradation, by presenting an analysis based on combined deep-level transient spectroscopy (C-DLTS), electro-optical characterization, and simulations, carried out before and during a constant current stress test. The original results of this paper are (i) C-DLTS measurements allowed us to identify three traps, two associated with Mg-related defects, also detected in the unaged device, and one related to point defects that were generated by the ageing procedure. (ii) Based on these results and on TCAD simulations, we explain the variation in the forward I–V by the degradation of the p-contact, due to Mg passivation. (iii) On the other hand, optical degradation is ascribed to an increase in defectiveness of the active region and surrounding areas, which led to a decrease in injection efficiency, to an increase in non-radiative recombination, and to an increase in trap-assisted tunneling processes.

Ultrafast GaAs MOVPE growth for power electronics

Schottky diodes designed with negative breakdown voltages of up to 400 V are used in applications like power supplies, motor drives, battery charging and server/data centers. GaAs is an ideal choice for such devices. Due to its high electron mobilities, lower series resistance and thus lower power consumptions in the “on” state than using Si, GaN or SiC can be achieved. Also GaAs wafers are available up to 8” with extremely high quality and low etch pit densities. To achieve breakdown voltages above 200 V in GaAs, typically doping levels below 1*1015 cm−3 and thicknesses in the range of tens of micrometers are needed. In order to achieve minimum turn-on losses, the thickness and doping has to be precisely controlled. For the epitaxy, the process time and group V precursor consumption due to typically high V/III ratios are the two largest cost factors. Recently, we have introduced MOVPE processes on a close coupled CRIUS showerhead reactor with growth rates up to 280 µm/h. Due to the extremely high growth rate, the loss of group-V material due to evaporation off the growth surface is minimized and even at V/III ratios below 15 a low C-background doping can be achieved. It is demonstrated that this low cost and ultrafast growth process is suitable for Schottky power diodes. 15 µm thick GaAs:Si Hall samples were grown at a growth rate of 100 µm/h. Controlled n-doping levels as low as 1.2*1014 cm−3 have been reached for a V/III ratio of 12. The room temperature mobilities were as high as 9*103 cm−3/Vs. Also, the electronic defect levels were analyzed by deep level transient spectroscopy. The EL2 (As anti-site) defect is found with a concentration 4.8*1014 cm−3. Nominally 20 µm and 30 µm thick layers were deposited on n-GaAs wafers for initial Schottky test diodes. The I-V curve in forward characteristics is characterized by an ideality factor of 1.2, a Schottky barrier height of 0.8 eV and a series resistance as low as 3.7 mΩcm2. Breakdown voltages above 370 V in reverse bias for doping levels of 2*1014 cm−3 were achieved proving the high potential of this approach.