Abstract
The radiation hardness of commercial 4H-SiC Schottky barrier diodes (STPSC1006D) has been investigated in this study. Primarily, intermittent irradiation at 0.5 Hz and continuous irradiation were analyzed and compared. Current–voltage (I–V), capacitance–voltage transform deep-level transient spectroscopy (FT-DLTS) were used to characterize the devices before and after irradiation. The devices show stability in their I–V characteristics upon irradiation. The free carrier concentration of the devices obtained from the C–V results decreased with the increasing of electron fluence. Additionally, new defects were observed after irradiation, which was the reason for the degradation in the electrical properties of the devices. The comparison of the devices irradiated intermittently and those irradiated continuous reveals that intermittent irradiation causes greater changes in electrical properties than continuous irradiation. These characteristics show the impact of STPSC1006D in space applications.
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