Transient Current Measurements Research Articles

Influence of Surface States in AlGaN/GaN Nanodiodes Analyzed by Preconditioned Transient Current Measurements

Influence of Surface States in AlGaN/GaN Nanodiodes Analyzed by Preconditioned Transient Current Measurements

Probing the Operation of Quantum-Dot Light-Emitting Diodes Using Electrically Pumped Transient Absorption Spectroscopy.

The quantum-dot light-emitting diode (QLED) is a new generation light emission source that holds great promise for display and lighting applications. Understanding the dynamics of electrons and holes in QLEDs during their operation is crucial for future QLED optimization, but a time-resolved technology capable of characterizing electrons is still lacking. To tackle this challenge, we develop a unique electrically pumped transient absorption (E-TA) spectroscopy to probe the density of electrons in the QD layer with a nanosecond time resolution. The E-TA result provides a comprehensive understanding of the electron dynamics in QLEDs by quantifying the electron injection time after external voltage on, electron release time after external voltage off, and equilibrated electron density (Ne) in the QD layer during device operation. By combining E-TA technology with time-resolved electroluminescence and transient current measurements, we present a comprehensive overview of the dynamics of both electrons and holes in a QLED during operation.

Ferroelectric Al0.85Sc0.15N and Hf0.5Zr0.5O2 Domain Switching Dynamics.

The capability to reliably program partial polarization states with nanosecond programming speed and femtojoule energies per bit in ferroelectrics makes them an ideal candidate to realize multibit memory elements for high-density crossbar arrays, which could enable neural network models with a large number of parameters at the edge. However, a thorough understanding of the domain switching dynamics involved in the polarization reversal is required to achieve full control of the multibit capability. Transient current integration measurements are adopted to investigate the domain dynamics in aluminum scandium nitride (Al0.85Sc0.15N) and hafnium zirconium oxide (Hf0.5Zr0.5O2). The switching dynamics are correlated to the crystal structure of the films. The contributions of domain nucleation and domain wall motion are decoupled by analyzing the rate of change of the time-dependent normalized switched polarization. Thermally activated creep domain wall motion characterizes the Al0.85Sc0.15N switching dynamics. The statistics of independently nucleating domains and the domain wall creep motion in Hf0.5Zr0.5O2 are associated with the spatially inhomogeneous distribution of local switching field due to polymorphism, absence of preferential crystallite orientation, as well as defects and charges that can be located at the grain boundaries. The c-axis texture, single-phase nature, and strong likelihood of less fabrication process-induced defects contribute to the homogeneity of the local switching field in Al0.85Sc0.15N. Nonetheless, defects generated and redistributed upon bipolar electric field switching cycling result in Al0.85Sc0.15N domain wall pinning. The wake-up effect in Hf0.5Zr0.5O2 is explained thorough the continuous addition of switchable regions associated with two independent distributions of characteristic switching times.

Capacitive and Inductive Characteristics of Volatile Perovskite Resistive Switching Devices with Analog Memory.

With the increasing demands and complexity of the neuromorphic computing schemes utilizing highly efficient analog resistive switching devices, understanding the apparent capacitive and inductive effects in device operation is of paramount importance. Here, we present a systematic array of characterization methods that unravel two distinct voltage-dependent regimes demonstrating the complex interplay between the dynamic capacitive and inductive effects in volatile perovskite-based memristors: (1) a low voltage capacitance-dominant and (2) an inductance-dominant regime evidenced by the highly correlated hysteresis type with nonzero crossing, the impedance responses, and the transient current characteristics. These dynamic capacitance- and inductance-dominant regimes provide fundamental insight into the resistive switching of memristors governing the synaptic depression and potentiation functions, respectively. More importantly, the pulse width-dependent and long-term transient current measurements further demonstrate a dynamic transition from a fast capacitive to a slow inductive response, allowing for the tailored stimulus programming of memristor devices to mimic synaptic functionality.

Ion Migration and Space‐Charge Zones in Metal Halide Perovskites Through Short‐Circuit Transient Current and Numerical Simulations

AbstractThe inherent ion migration in metal halide perovskite materials is known to induce deleterious and highly unstable dark currents in X‐ and γ‐ray detectors based on those compounds upon bias application. Dark current slow drift with time is identified as one of the major drawbacks for these devices to satisfy industrial requirements. Because dark current establishes the detectability limit, current evolution, and eventual growth may mask photocurrent signals produced by incoming X‐ray photons. Relevant information for detector assessment is ion‐related parameters such as ion concentration, ion mobility, and ionic space‐charge zones that are eventually built near the outer contacts upon detector biasing. A combined experimental (simple measurement of dark current transients) and 1D numerical simulation method is followed here using single‐crystal and microcrystalline millimeter‐thick methylammonium‐lead bromide that allows extracting ion mobility within the range of µion ≈ 10−7 cm2 V−1 s−1, while ion concentration values approximate Nion ≈ 1015 cm−3, depending on the perovskite crystallinity.

Electrochemical Surface Nanostructuring of Ti47Cu38Fe2.5Zr7.5Sn2Si1Ag2 Metallic Glass for Improved Pitting Corrosion Resistance

Ti‐based bulk metallic glasses are envisioned for human implant applications. Yet, while their elevated Cu content is essential for a high glass‐forming ability, it poses biocompatibility issues, necessitating a reduction in near‐surface regions. To address this, surface treatments that simultaneously generate protective and bioactive states, based on nanostructured Ti and Zr‐oxide layers are proposed. An electrochemical pseudo‐dealloying process using the bulk glass‐forming Ti47Cu38Fe2.5Zr7.5Sn2Si1Ag2 alloy is defined. Melt‐spun ribbons are immersed in hot concentrated nitric acid solution, monitoring the anodic polarization behavior. From the current density transient measurements, together with surface studies (field‐emission scanning electron microscopy, transmission electron microscopy, and Auger electron spectroscopy), the surface reactions are described. This nanostructuring process is divided into three stages: passivation, Cu dissolution, and slow oxide growth, leading to homogenous nanoporous and ligament structures. By tuning the applied potential, the pore and ligament sizes, and thickness values are adjusted. According to X‐ray photoelectron spectroscopy, these nanoporous structures are Ti and Zr‐oxides rich in hydrous and nonhydrous states. In a simulated physiological solution, for those treated glassy alloy samples, complete suppression of chloride‐induced pitting corrosion in the anodic regime of water stability is achieved. This high corrosion resistance is similar to that of clinically used cp‐Ti.

Elucidating the Role of Ligand Engineering on Local and Macroscopic Charge‐Carrier Transport in NaBiS2 Nanocrystal Thin Films

AbstractTernary chalcogenides have emerged as potential candidates for ultrathin photovoltaics, and NaBiS2 nanocrystals (NCs) have gained appeal because of their months‐long phase‐stability in air, high absorption coefficients >105 cm−1, and a pseudo‐direct bandgap of 1.4 eV. However, previous investigations into NaBiS2 NCs used long‐chain organic ligands separating individual NCs during synthesis, which severely limits macroscopic charge‐carrier transport. In this work, these long‐chain ligands are exchanged for short iodide‐based ligands, allowing to understand the macroscopic charge‐carrier transport properties of NaBiS2 and evaluate its photovoltaic potential in more depth. It is found that ligand exchange results in simultaneous improvements in intra‐NC (microscopic) and inter‐NC (macroscopic) mobilities, while charge‐carrier localization still takes place, which places a fundamental limit on the transport lengths achievable. Despite this limitation, the high absorption coefficients enable ultrathin (55 nm thick) solar absorbers to be used in photovoltaic devices, which have peak external quantum efficiencies > 50%. In addition, temperature‐dependent transient current measurements uncover a small activation energy barrier of 88 meV for ion migration, which accounts for the strongly hysteretic behavior of NaBiS2 photovoltaic devices. This work not only reveals how the charge‐carrier transport properties of NaBiS2 NCs over several length and time scales are influenced by ligand engineering, but also unveils the facile ionic transport in this material, which limits the potential of NaBiS2 in photovoltaics. On the other hand, the discovery shows that there are opportunities to use this material in memristors, electrolytes, and other applications requiring ionic conduction.

Understanding of polarization reversal and charge trapping under imprint in HfO2-FeFET by charge component analysis

Polarization reversal and charge trapping under imprint in HfO2-based ferroelectric FET (FeFET) are studied by charge component analysis. By decomposing the effects of spontaneous polarization and charge trapping using the transient current measurement with triangle waves in both metal–ferroelectric–metal (MFM) and metal–ferroelectric–insulator-Si (MFIS) capacitors, we found that V th under imprint in MFIS is determined by both coercive voltage (V c) shift due to imprint and the subsequent modulation of charge trapping at the same polarization. In addition, a comparison of V c shift due to imprint of MFM and MFIS was performed. V c shift of MFIS was found to be in good agreement with that of MFM. This implies that the imprint in FeFET can be predicted from MFM even though FeFET has a complex structure with an interfacial layer.

Kinetics of N- to M-Polar Switching in Ferroelectric Al1-xScxN Capacitors.

Ferroelectric wurtzite-type aluminum scandium nitride (Al1-xScxN) presents unique properties that can enhance the performance of non-volatile memory technologies. The realization of the full potential of Al1-xScxN requires a comprehensive understanding of the mechanism of polarization reversal and domain structure dynamics involved in the ferroelectric switching process. In this work, transient current integration measurements performed by a pulse switching method are combined with domain imaging by piezoresponse force microscopy (PFM) to investigate the kinetics of domain nucleation and wall motion during polarization reversal in Al0.85Sc0.15N capacitors. In the studied electric field range (from 4.4 to 5.6MVcm-1), ferroelectric switching proceeds via domain nucleation and wall movement. The currently available phenomenological models are shown to not fully capture all the details of the complex dynamics of polarization reversal in Al0.85Sc0.15N. PFM reveals a non-linear increase of both domain nucleation rate and lateral wall velocity during the switching process, as well as the dependency of the domain pattern on the polarization reversal direction. A continuously faster N- to M-polar switching upon cycling is reported and ascribed to an increasing number of M-polar nucleation sites and density of domain walls.

Investigation into Impedance Measurements for Rapid Capacity Estimation of Lithium-ion Batteries in Electric Vehicles

With the dramatic increase in electric vehicles (EVs) globally, the demand for lithium-ion batteries has grown dramatically, resulting in many batteries being retired in the future. Developing a rapid and robust capacity estimation method is a challenging work to recognize the battery ageing level on service and provide regroup strategy of the retied batteries in secondary use. There are still limitations on the current rapid battery capacity estimation methods, such as direct current internal resistance (DCIR) and electrochemical impedance spectroscopy (EIS), in terms of efficiency and robustness. To address the challenges, this paper proposes an improved version of DCIR, named pulse impedance technique (PIT), for rapid battery capacity estimation with more robustness. First, PIT is carried out based on the transient current excitation and dynamic voltage measurement using the high sampling frequency, in which the coherence analysis is used to guide the selection of a reliable frequency band. The battery impedance can be extracted in a wide range of frequency bands compared to the traditional DCIR method, which obtains more information on the battery capacity evaluation. Second, various statistical variables are used to extract ageing features and Pearson correlation analysis is applied to determine the highly correlated features. Then a linear regression model is developed to map the relationship between extracted features and battery capacity. To validate the performance of the proposed method, the experimental system is designed to conduct comparative studies between PIT and EIS based on the two 18650 batteries connected in series. The results reveal that the proposed PIT can provide comparative indicators to EIS, which contributes higher estimation accuracy of the proposed PIT method than EIS technology with lower time and cost. Conflict of Interest Statement The authors declare no conflicts of interest.

Isopropanol sensor based on sprayed In2S3 thin film using linear discriminant analysis for real-time selectivity.

Metal sulfides have been studied for their high performance as new sensitive materials for gas detection. These material innovations contribute significantly to the development of more sensitive, stable and specific conductivity sensors, opening the way to new applications in detecting gases at low concentrations. Hence, this work reports on the sensing performance of In2S3 for isopropanol detection. Numerous VOCs, such as ketones, alcohols, and aldehydes, serve as cancer biomarkers. Notably, isopropanol, as a biomarker, shows a substantial increase (20-1007 ppb) in lung cancer patients, suggesting its potential as an early diagnostic criterion. To explore this, we fabricated a thin film of In2S3 onto a platinum interdigitated silicon dioxide substrate by simple and low-cost spray pyrolysis technology. Structural and morphological analyses via XRD, MEB, AFM, and TEM were conducted on the prepared samples. Isopropanol vapor response was assessed within a controlled temperature range of 250 °C-450 °C. The In2S3-based sensor demonstrated notable sensitivity (0.034 ppm-1), maintained stability over three weeks, and reliably detected isopropanol activation. In2S3 emerges as a promising candidate for detecting isopropanol, with a limit of detection (LOD) of 162 ppb. In this work, seven VOCs, including isopropanol, ethanol, methanol, butan-1-ol, formaldehyde, toluene, and acetone, were evaluated. Cross-responses among these VOCs were observed, indicating a lack of assured sensor selectivity. However, isopropanol recognition was achieved by employing linear discriminant analysis (LDA) on pertinent features derived from transient current change measurements. As a result, the sensor's sensitivity enables the deduction of the isopropanol concentration.

Characterization of High Zinc Al-Zn-Mg-Cu Alloy By Electrochemical Noise and Current Transient Measurements

Electrochemical noise (EN) method and current transient measurements have been used in to characterize metastable pitting in high zinc Al-Zn-Mg-Cu alloy. The outcomes are evaluated against those from scanning electron microscopy and atomic force microscopy. Results of transient electrochemical analysis and image analysis are compared and explained based on heterogeneity of microstructures arising from presence of different precipitates.

Investigating charge traps in MoTe2 field-effect transistors: SiO2 insulator traps and MoTe2 bulk traps

Two-dimensional material-based field-effect transistors are promising for future use in electronic and optoelectronic applications. However, trap states existing in the transistors are known to hinder device performance. They capture/release carriers in the channel and lead to hysteresis in the transfer characteristics. In this work, we fabricated MoTe2 field-effect transistors on two different gate dielectrics, SiO2 and h-BN, and investigated temperature-dependent charge trapping behavior on the hysteresis in their transfer curves. We observed that devices with SiO2 back-gate dielectric are affected by both SiO2 insulator traps and MoTe2 intrinsic bulk traps, with the latter becoming prominent at temperatures above 310 K. Conversely, devices with h-BN back-gate dielectric, which host a negligible number of insulator traps, primarily exhibit MoTe2 bulk traps at high temperatures, enabling us to estimate the trap energy level at 389 meV below the conduction band edge. A similar energy level of 396 meV below the conduction band edge was observed from the emission current transient measurement. From a previous computational study, we expect these trap states to be the tellurium vacancy. Our results suggest that charge traps in MoTe2 field-effect transistors can be reduced by careful selection of gate insulators, thus providing guidelines for device fabrication.

Toward the Generation of Test Vectors for the Detection of Hardware Trojan Targeting Effective Switching Activity

Hardware Trojans (HTs) are small circuits intentionally designed by an adversary for harmful purposes. These types of circuits are extremely difficult to detect. An HT often requires some specific signals to activate, which are almost impossible to discover. For this reason, test generation for side-channel analysis has gained significant attention in recent times and does not require HT activation. Such test generation techniques aim to generate a large amount of switching activity inside the HT circuit, increasing transient current measurement. However, such methods suffer from either long runtime or reliable results. In this work, a test generation technique is proposed based on the relative switching activity of the circuit to overcome the limitations of the existing works. Initially, the proposed technique measures the impact of each input on rare nets individually using random vector simulation. Potent inputs are selected to obtain a new set of test vectors that provide high relative switching inside a circuit. The proposed method is applied on 11 different ISCAS and 3 ITC 99 benchmark circuits. Experimental results endorse the efficacy of the proposed method outperforming traditional Hamming distance-based re-ordering techniques (up to 20×) while requiring a small runtime.

Properties of κ‐Ga2O3 Prepared by Epitaxial Lateral Overgrowth

AbstractThe structural and electrical properties of undoped and Sn doped κ‐Ga2O3 layers grown by epitaxial lateral overgrowth on TiO2/sapphire substrates using stripe and point masks show that the crystalline structure of the films can be greatly improved relative to conventional planar growth. The undoped films are semi‐insulating, with the Fermi level pinned near EC‐0.7 eV, and deep electron traps at EC‐0.5 eV and EC‐0.3 eV are detectable in thermally stimulated current and photoinduced current transient spectra measurements. Low concentration Sn doping results in net donor concentrations of ≈ 1013 cm−3, and deep trap spectra determined by electron traps at EC‐0.5 eV, and deep acceptors with an optical ionization threshold near 2 and 3.1 eV. Treatment of the samples in hydrogen plasma at 330 °C increases the donor density near the surface to ≈ 1019 cm−3. Such samples show strong persistent photocapacitance and photoconductivity, indicating the possible DX‐like character of the centers involved. For thin (5 µm) κ‐Ga2O3 films grown on GaN/sapphire templates, p‐type‐like behavior is unexpectedly observed in electrical properties and we discuss the possible formation of a 2D hole gas at the κ‐Ga2O3/GaN interface.

The principles of a new line surge arrester's transient current measurement system

Power systems are exposed to different types of electromagnetic transients, which involve a large spectrum of signals whose duration can range from several nanoseconds to several milliseconds, and whose peak values can also cover a wide range of values. Therefore, measuring electromagnetic transients in power systems is a challenging task. Fast front transients caused by lightning events are especially dangerous, and improved knowledge about them is essential for better protection design. The development of measuring systems for such phenomenon is important. This paper is dedicated to the development of a measuring system for lightning and line surge arrester currents. Modern electronic tools and equipment, as well as cutting-edge communication and information technologies, constitute the foundation of the proposed system. This includes the most recent models of acquisition units and GPS devices that are now available on the market, as well as communication networks including 4 G, 5 G, and WiFi. Software and hardware components of the system are described. The paper presents laboratory tests conceived to prove that the system operates correctly and provides accurate results. The measurements are compared to EMTP and MATLAB simulations. Both are in agreement.

High temperature stability of H-diamond high frequency MOSFET with 300°C grown Al2O3 dielectric

The high frequency H-diamond metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated on single diamond substrate using 300°C ALD grown Al2O3 as gate dielectric and passivation layer. The devices gate length, gate/drain spacing and dielectric thickness are 100 nm, 2 μm, and 10 nm, respectively. The direct-current and frequency characteristics were investigated. The device shows a maximum saturation drain current of −492.6 mA/mm and gm of 135.2 mS/mm. The device shows good high temperature working performance, and the maximum saturation drain current only has a little decreasing of 7.6%. at 200°C. In addition, the device exhibits a maximum cut-off frequency of 36.2 GHz and maximum oscillation frequency of 70.5 GHz. The transient drain current response measurement indicates that the drain current can follow the changing of gate voltage at the frequency of 1 MHz. These results indicate that the Al2O3 dielectric is suitable for using in high frequency or the high-speed switching devices.

Influence of surface adsorption on MoS2 memtransistor switching kinetics

Sulfur-deficient polycrystalline two-dimensional (2D) molybdenum disulfide (MoS2) memtransistors exhibit gate-tunable memristive switching to implement emerging memory operations and neuromorphic computing paradigms. Grain boundaries and sulfur vacancies are critical for memristive switching; however, the underlying physical mechanisms are not fully understood. Furthermore, the adsorption of water and gaseous species strongly perturbs electronic transport in monolayer MoS2, and little work has been done to explore the influence of surface interactions on defect-related kinetics that produces memristive switching. Here, we study the switching kinetics of back-gated MoS2 memtransistors using current transient measurements in a controlled atmosphere chamber. We observe that adsorbed water molecules lead to suppression of the electronic trap-filling processes concomitant with the resistive switching process, resulting in altered kinetics of the resistive switching. Additionally, using the transient response from “bunched” drain voltage pulse trains performed as a function of temperature, we extract the energy of the affected trap state and find that it places the trap roughly midgap [ET=EC – 0.7 (±0.4) eV]. Our results highlight the importance of controlling for surface interactions that may affect switching kinetics in 2D memtransistors, synaptic transistors, and related memory devices.

Cylindrical magnetoelectric FeGa/PZT composite for lightning current sensing applications

Magnetoelectric (ME) composites have been proven to apply to current sensors. However, the previously reported ME materials-based current sensors mainly focus on direct current and sine alternating current sensing, which put a critical limit on the measurement of transient current. In this paper, a cylindrical ME composite consisting of a magnetostrictive Fe83Ga17 (FeGa) cylinder and a piezoelectric Pb(Zr, Ti)O3 (PZT) circular tube is fabricated for lightning current sensing applications. The time-domain output voltage of the FeGa/PZT composite is simulated and measured in detail. Under the excitation of 8/20 µs lighting current, the output voltage of the composite can change with the current. But the damping oscillation at its resonant frequency is observed. Furthermore, to obtain an obvious ME response, the FeGa/PZT cylinder and current-carrying wire should be arranged closely and in an orthogonal way. When the amplitude of 8/20 µs lightning current is in the range of 500 A–9 kA, the ME FeGa/PZT composite shows a sensitivity of 1.36 mV A−1, a linear response (R 2 = 0.9993), and a small return error (0.12 V). These results provide that the ME composite is suitable to be used in non-contact lightning current measurements.

Experimentally Validated Gate-Lag Simulations of AlGaN/GaN HEMTs Using Fermi Kinetics Transport

This article presents for the first time a direct connection between gate lag observed in drain current transient measurements of gallium nitride (GaN) high-electron-mobility transistors (HEMTs) and traps located in the barrier of the transistor epitaxy. Semiclassical numerical simulations are presented using the Air Force Research Laboratory’s (AFRL’s) Fermi kinetics transport (FKT) solver and are validated with drain current transient measurements. Capacitance–voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${C} - {V}$ </tex-math></inline-formula> ) and conductance–voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${G} - {V}$ </tex-math></inline-formula> ) measurements are also presented to provide further insights into the trap location used in the FKT simulations. These simulations indicate that equivalent defects located specifically at the AlGaN barrier/GaN cap interface of an AFRL GaN HEMT with a density of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$7.5\times 10^{{12}}$ </tex-math></inline-formula> cm−2 and positioned 1.464 eV below the GaN cap conduction band edge were the salient traps linked to the gate-lag phenomenon. The study highlights the importance of experimentally benchmarked device simulation for trapping analysis in GaN HEMTs and may provide significant insights into device engineers for mitigating trapping effects in state-of-the-art GaN technologies.