Abstract
Polarization reversal and charge trapping under imprint in HfO2-based ferroelectric FET (FeFET) are studied by charge component analysis. By decomposing the effects of spontaneous polarization and charge trapping using the transient current measurement with triangle waves in both metal–ferroelectric–metal (MFM) and metal–ferroelectric–insulator-Si (MFIS) capacitors, we found that V th under imprint in MFIS is determined by both coercive voltage (V c) shift due to imprint and the subsequent modulation of charge trapping at the same polarization. In addition, a comparison of V c shift due to imprint of MFM and MFIS was performed. V c shift of MFIS was found to be in good agreement with that of MFM. This implies that the imprint in FeFET can be predicted from MFM even though FeFET has a complex structure with an interfacial layer.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
