Abstract
This study presents a measurement methodology to reveal the effects of ferroelectric polarization switching, charge trapping and de-trapping effects in Ferroelectric Field Effect Transistors (FeFETs). Combining the write pulse and transfer characteristics read for Memory Window (MW) determination with one-spot measurement demonstrates the interplay between the polarization switching and charge trapping effects. These measurements have been done on n channel FeFETs fabricated in-house with 10nm ferroelectric hafnium zirconium oxide as the gate dielectric.
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