Tunability offers in the optoelectronic properties of TCOs open up the way to advanced applications in the field of photovoltaics. However, the conductivity of p-type TCOs remains an unresolved problem. In this work, an advantage of RF magnetron sputtering is employed to obtain polycrystalline CuO film at room temperature with better conductivity and optimum bandgap by controlling nitrogen gas pressure. Doping of N2 gas pressure has a significant influence on the morphology of CuO films, resulting in improved electrical and optical properties of films at room temperature. The variation of structural characteristics with respect to N2 gas pressure is discussed in detail using XRD, AFM, SEM, and EDX measurements, and these results confirm nitrogen's impact in improving the property of the fabricated film. The results show that the crystalline size, as well as the crystalline quality of the film, was found to increase with the increase in N2 gas pressure at room temperature. Atomic force microscope (AFM) shows that all the deposited films are well adherent and grains are uniformly distributed over the surface of the substrate. The simultaneous effect of doping and grain boundary migration of nitrogen atom into CuO lattice increases crystallinity and the mobility of charge carriers at room temperature. This experimental strategy made CuO a good p-type material with mobility of 2.17 × 103cm2/Vs and bandgap of 2.44eV at N2 gas pressure of 2 × 10−2mbar and resistivity is decreased due to high mobility obtained by tuning N2 gas pressure. These results suggest that the electrical and optical properties of CuO thin films can be modulated by optimizing the carrier concentration and thus mobility by controlling the N2 gas pressure.