Abstract
Pure and (1, 3, and 5 wt%) Aluminum-doped copper oxide(Al:CuO) thin films were prepared using the JNS spray-pyrolysis technique using analytical grade copper chloride and aluminum chloride as a precursor. The monoclinic structure of the CuO film has been confirmed by an X-ray diffraction (XRD) study. The microstructure of the films is analyzed with the help of a scanning electron microscope (SEM). The optical characteristics of the grown films have been examined with the help of UV–vis spectroscopy, from which the bandgap of the materials of the coated films are calculated. Electrical properties such as conductivity and the diode activity of the films are studied using I-V characterization, which shows the improved electrical conductivity with the increase in doping concentration. Diodes are fabricated using pure and Aluminum-doped p-type CuO thin films coated on the n-type silica wafer by the JNS technique, and the rectification behavior is found to improved at a higher doping concentration of Al3+ ions.
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