This paper presents the advances in EXAFS studies of the thermodynamic properties and anharmonic effects based on Debye-Waller factors presented in terms of cumulant expansion. The advances are succeeded based on the generalized anharmonic correlated Einstein model (GACEM) derived for all material structures including complex systems and separated for each structure by its anharmonic effective potential parameters contained in the derived analytical expressions of three first EXAFS cumulants and thermal coefficient. Many-body effects are accounted in the present one-dimensional model based on the first-shell near-neighbor contributions to the vibrations between absorber and backscatterer atoms. Morse potential is assumed to describe single-pair atomic interaction. The method created in this GACEM has the advantage of using it all considered quantities are provided based on only the calculation or measurement of second cumulants. The advanced studies are successfully applied to semiconductors. The results calculated using the present theory and those obtained by the created method for Ge and Si having diamond structure are found to be in good and reasonable agreement with experiment and with those of other theories.
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