Crystalline Growth Research Articles

Preparation of Photoluminescent Zr-Eu Compound Films Based on Electrodeposited 3D Zirconium Oxyfluoride Films

Abstract Photoluminescent europium-zirconium compound films were prepared by immersing electrodeposited 3D zirconium oxyfluoride films comprising aggregates of sword-type leaf-like units, in a europium nitrate aqueous solution at 323 K. Characterization of the as-immersed films using X-ray diffraction analysis and scanning transmission electron microscopy revealed the deposition of EuF3 on the surface of the leaf-like units. Analysis of the films calcined at 773 K in air employing Raman scattering spectroscopy suggested that the films were composed of rhombohedral EuOF and Eu3+-doped tetragonal ZrO2. The red photoluminescence of the films at room temperature originating from the 4f–4f transitions of Eu3+ was investigated in relation to the site symmetry of Eu3+ in the crystalline phase. The red photoluminescence properties of the films were improved by calcination, which intensified the peak of the 5D0 → 7F2 transition at ~610 nm, called as the electric dipole transition (EDT). The EDT emission intensity of the calcined films increased with increasing Eu3+ concentration in the immersion solution, which was attributed to the dominant crystalline growth of rhombohedral EuOF showing lower Eu3+ site symmetry compared with Eu3+-doped tetragonal ZrO2.

Ameliorating Defects in Wide Bandgap Tin Perovskite Solar Cells Using Fluorinated Solvent and Hydrazide.

Surface passivation with multifunctional molecules is an effective strategy to mitigate the defect and improve the performance and stability of perovskite solar cells (PSCs). Here, the fabrication of awide bandgap-PSC is reported with tin perovskite (WB-Sn-HP; bandgap: 1.68 eV), followed by molecular surface passivation using 4-Fluoro-benzohydrazide (F-BHZ). WB-Sn-PSC has demonstrated a promising device efficiency of 11.14% with improved device stability. The key to enhancing device performance lies in the meticulous engineering of both surface and bulk properties of WB-Sn-HP film with F-BHZ treatment as a consequence of stronger electrostatic potential and molecular interaction with hydrazine and carbonyl functionalities. A compact perovskite film and highly crystalline film growth results in a longer carrier lifetime and surface defect mitigation with the control of Sn2+ oxidation as supported by theoretical calculations. This work underlines the promising potential of chemical engineering to improve the device performance of WB-Sn-PSC and stabilityusing multifunctional passivating molecules.

Ge Epitaxy at Ultralow Growth Temperatures Enabled by a Pristine Growth Environment.

Germanium (Ge), the next-in-line group-IV material, bears great potential to add functionality and performance to next-generation nanoelectronics and solid-state quantum transport based on silicon (Si) technology. Here, we investigate the direct epitaxial growth of two-dimensional high-quality crystalline Ge layers on Si deposited at ultralow growth temperatures (T Ge = 100-350 °C) and pristine growth pressures (≲10-10 mbar). First, we show that a decreasing T Ge does not degrade the crystal quality of homoepitaxial Ge/Ge(001) by comparing the point defect density using positron annihilation lifetime spectroscopy. Subsequently, we present a systematic investigation of the Ge/Si(001) heteroepitaxy, varying the Ge coverage (ΘGe, 1, 2, 4, 8, 12, and 16 nm) and T Ge (100-300 °C, in increments of 50 °C) to assess the influence of these parameters on the layer's structural quality. Atomic force microscopy revealed a rippled surface topography with superimposed grainy features and the absence of three-dimensional structures, such as quantum dots. Transmission electron microscopy unveiled pseudomorphic grains of highly crystalline growth separated by defective domains. Thanks to nanobeam scanning X-ray diffraction measurements, we were able to evidence the lattice strain fluctuations due to the ripple-like structure of the layers. We conclude that the heteroepitaxial strain contributes to the formation of the ripples, which originate from the kinetic limitations of the ultralow temperatures.

3,6-Bis(methylthio)-9H-carbazole Based Self-Assembled Monolayer for Highly Efficient and Stable Inverted Perovskite Solar Cells.

The photovoltaic performance of inverted perovskite solar cells (PSCs) relies on effectively managing the interface between the hole extraction layer and the light-absorbing perovskite layer. In this study, we have synthesised (4-(3,6-bis(methylthio)-9H-carbazol-9-yl)butyl)phosphonic acid (MeS-4PACz), which forms a self-assembled monolayer on the fluorine-doped tin oxide (FTO) electrode. The molecule's methylthio substituents generate a favourable interfacial dipole moment and interact with the perovskite layer. This interaction results in well-aligned energy levels among the FTO/SAM/perovskite layers, promoting efficient hole extraction and significantly reducing carrier recombination losses. Additionally, the methylthio groups passivate iodide vacancies and interact with Pb2+ ions of the perovskite, reducing defect-induced trap states and enhancing the crystalline growth of the perovskite layer. Consequently, inverted PSCs incorporating MeS-4PACz achieve a remarkable power conversion efficiency of 25.13%, along with outstanding photostability.

3,6‐Bis(methylthio)‐9H‐carbazole Based Self‐Assembled Monolayer for Highly Efficient and Stable Inverted Perovskite Solar Cells

The photovoltaic performance of inverted perovskite solar cells (PSCs) relies on effectively managing the interface between the hole extraction layer and the light‐absorbing perovskite layer. In this study, we have synthesised (4‐(3,6‐bis(methylthio)‐9H‐carbazol‐9‐yl)butyl)phosphonic acid (MeS‐4PACz), which forms a self‐assembled monolayer on the fluorine‐doped tin oxide (FTO) electrode. The molecule's methylthio substituents generate a favourable interfacial dipole moment and interact with the perovskite layer. This interaction results in well‐aligned energy levels among the FTO/SAM/perovskite layers, promoting efficient hole extraction and significantly reducing carrier recombination losses. Additionally, the methylthio groups passivate iodide vacancies and interact with Pb2+ ions of the perovskite, reducing defect‐induced trap states and enhancing the crystalline growth of the perovskite layer. Consequently, inverted PSCs incorporating MeS‐4PACz achieve a remarkable power conversion efficiency of 25.13%, along with outstanding photostability.

Enhancement of superconducting properties of grown FeTe0.65Se0.35 single crystals through air annealing

Abstract This work investigates the annealing effects on the superconducting properties of FeTe0.65Se0.35 single crystals. We examine the impact of varying annealing times on the magnetotransport, magnetic, and vortex pinning properties of the single crystals. The structural analysis shows the single crystalline growth of crystals along the c-axis. X-ray photoelectron spectroscopy results confirm the presence of iron oxides in the annealed samples. Temperature-dependent resistivity and magnetization measurements confirm the superconductivity in the as-grown and annealed samples. However, the as-grown sample shows a broad superconducting transition and low superconducting volume fraction, but after annealing, significant improvement in both is observed. Moreover, the self-field critical current density at 2 K is enhanced by a factor of ~4.5 for the optimally annealed sample compared to the as-grown sample. Experimental observations have been analyzed with the theoretical models to understand the effects of annealing on the vortex pinning mechanisms. Further, the specific heat study confirms the bulk superconductivity in the annealed sample compared to the as-grown single crystal. Overall, our study indicates that the superconducting properties vary with the annealing time, and the best results are obtained at an optimum annealing time.

Effect of Sulfurization Temperature on Properties of Cu2ZnSnS4 Thin Films and Diffusion of Ti Substrate Elements

The addition of flexible Cu2ZnSnS4 (CZTS) thin film solar cells to titanium (Ti) substrates is an attractive way to achieve the low-cost manufacturing of photovoltaics. Prior research has indicated that the appropriate diffusion of Ti elements can enhance the crystalline growth of CZTS films. However, the excessive diffusion of Ti has been shown to adversely affect the photovoltaic performance of CZTS photovoltaic devices. Therefore, it is essential to regulate the diffusion of Ti elements within CZTS thin films to optimize their photovoltaic properties. The tendency for Ti substrate elements to diffuse into CZTS films is also influenced by the activation energy associated with these Ti elements. The sulfurization temperature is posited to be a critical factor in modulating the diffusion and activation energy of Ti elements within CZTS thin films. Consequently, this research investigates the alteration of the sulfurization temperature of CZTS thin films in order to enhance the properties of these thin films and to examine the diffusion behavior of titanium elements. The results reveal that as the sulfurization temperature increases, the diffusion of Ti elements within the CZTS thin films initially increases, then decreases, and subsequently increases again. This pattern suggests that the diffusion of Ti elements is affected not only by the activation energy of the Ti elements but also by the defect hopping distance within the CZTS thin films. Notably, at a sulfurization temperature of 550 °C, the grains at the base of the CZTS thin film demonstrate an increased density, which is associated with a reduced defect hopping distance, thereby hindering the diffusion of Ti elements within the CZTS thin films. Furthermore, at this specific sulfurization temperature, the slope of the current–voltage (I–V) curve for the CZTS/Ti structure reaches its maximum, indicating optimal ohmic contact characteristics.

Electrospun Lithium Porous Nanosorbent Fibers for Enhanced Lithium Adsorption and Sustainable Applications.

Electrospun nanosorbent fibers specifically designed for efficient lithium extraction were developed, exhibiting superior physicochemical properties. These fibers were fabricated using a polyacrylonitrile/dimethylformamide matrix, with viscosity and dynamic mechanical analysis showing that optimal interactions were achieved at lower contents of layered double hydroxide. This meticulous adjustment in formulation led to the creation of lithium porous nanosorbent fibers (Li-PNFs-1). Li-PNFs-1 exhibited outstanding mechanical attributes, including a yield stress of 0.09 MPa, a tensile strength of 2.48 MPa, and an elongation at a break of 19.7%. Additionally, they demonstrated pronounced hydrophilicity and hierarchical porous architecture, which greatly favor rapid wetting kinetics and lithium adsorption. Morphologically, they exhibited uniform smoothness with a diameter averaging 546 nm, indicative of orderly crystalline growth and a dense molecular arrangement. X-ray photoelectron spectroscopy and density functional theory using Cambridge Serial Total Energy Package revealed modifications in the spatial and electronic configurations of polyacrylonitrile due to hydrogen bonding, facilitating lithium adsorption capacity up to 13.45 mg/g under optimal conditions. Besides, kinetics and isotherm showed rapid equilibrium within 60 min and confirmed the chemical and selective nature of Li+ uptake. These fibers demonstrated consistent adsorption performance across multiple cycles, highlighting their potential for sustainable use in industrial applications.

Temperature-dependent evolution of synthetic coal-derived graphite fillers and their reinforcement in styrene butadiene rubber composites

This study investigated the structural evolution of synthetic coal-derived graphite (SCG), produced from anthracite through high-temperature treatments ranging from 1000 to 2900 °C, and its reinforcement potential in styrene butadiene rubber (SBR) composites. Upon heating the anthracite to 2000 °C, We observed a gradual structural transformation from an amorphous carbon structure with mixed sp2-sp3 bonding to an ordered sp2-bonded nano-sized graphitic structure. This transformation was accompanied by the evaporation of heteroatom functional groups, an increase in high surface energy site as well as micropore and void structures, and enhanced hydrophobic surface property. Beyond 2000 °C, a flake-like graphite with a larger particle size (average lateral size >10 μm) was gradually formed through lateral and vertical crystalline growth mechanisms. The reinforcing potential of SCG fillers was revealed by incorporating them into SBR and evaluating the properties of the resulting composites. It was found that the tensile strength and 300 % tensile modulus initially enhanced with SCG fillers treated up to 2000 °C, but decreased for fillers treated at 2300 and 2900 °C. On the other hand, storage modulus, tear resistance, and gas permeability consistently improved with fillers treated at higher temperatures. These findings highlight the relationship between the temperature-induced structural evolution of SCG fillers and their reinforcement performance in SBR composites, offering valuable insights for industrial rubber applications, particularly enhancing the performance and sustainability of automotive tire.

Growth of VO2-ZnS thin film cavity for adaptive thermal emission

Low-weight, passive, thermal-adaptive radiation technologies are needed to maintain an operable temperature for spacecraft while they experience various energy fluxes. In this study, we used a thin film coating with the Fabry–Pérot (FP) effect to enhance emissivity contrast (Δε) between VO2 phase-change states. This coating utilizes a hybrid material architecture that combines VO2 with a mid- and long-wave infrared transparent chalcogenide, zinc sulfide (ZnS), as a cavity spacer layer. We simulated the design parameter space to obtain a theoretical maximum Δε of 0.63 and grew prototype devices. Using x-ray diffraction, Raman spectroscopy, and Fourier transform infrared spectroscopy (FTIR), we determined that an intermediate buffer layer of TiO2 is necessary to execute the crystalline growth of monoclinic VO2 on ZnS. Through temperature-dependent FTIR measurements, our fabricated devices demonstrated FP-cavity enhanced adaptive thermal emittance.

Defect Passivation for Highly Efficient and Stable Sn-Pb Perovskite Solar Cells

Sn-Pb perovskite solar cells, which have the advantages of low toxicity and a simple preparation process, have witnessed rapid development in recent years, with the power conversion efficiency for single-junction solar cells exceeding 23%. Nevertheless, the problems of poor crystalline quality of Sn-Pb perovskite films arising from rapid crystallization rate and facile oxidation of Sn2+ to Sn4+ have become key issues for the further development of Sn-Pb perovskite solar cells. Herein, we report the incorporation of triazinamide (N-(6-methyl-3-oxo-2,5-dihydro-1,2,4-Triazin-4(3H)-YL) acetamide) as an additive to regulate the crystalline growth of Sn-Pb perovskite films, resulting in films with low trap density and large grain size. The triazinamide additive effectively passivated defects in the perovskite films. As a result, the triazinamide-modified perovskite solar cells achieved a higher efficiency of 15.73%, compared with 13.32% for the control device, significantly improving device performance. Notably, the optimal triazinamide-modified perovskite solar cell maintained 72% of its initial power conversion efficiency after being stored in an air environment for nearly 300 h, while only 18% of the power conversion efficiency of the control perovskite solar cell was retained. This study proposes an effective strategy for fabricating highly efficient and stable Sn-Pb perovskite solar cells.

Effect of hydrogen flow rate on the plasma state and quality of diamond crystals grown by MPCVD

The electronic application of diamond is still immature because of the relatively high density of dislocation. Hydrogen flow rate is one of the key parameters that determine the crystalline quality of diamond, but most of the previous works focus on the growth of polycrystalline diamond. Herein, the effects of hydrogen flow rate on the growth rate and crystalline quality of single crystal diamond have been evaluated while keeping the CH4/H2 ratio. It demonstrates that a medium H2 flow rate can balance the C2 concentration and nitrogen leakage in the chamber, resulting in the maximum of growth rate. Similarly, the dislocation density decreases firstly and then increases with a minimum value of 4 × 104/cm2 under a medium H2 flow rate. The variation of growth rate and dislocation density versus hydrogen flow rate can be double-confirmed from both high pressure and high temperature and chemical vapor deposition samples. The incline angle of step riser relative to the terrace is smaller than 20°, which helps to switch the propagation direction of dislocation towards the raiser region. A relatively wider step width under a medium H2 flow rate means a lower density of step riser region to display the dislocation. Therefore, we conclude that a medium hydrogen flow rate can effectively balance the crystalline quality and growth rate of the single crystal diamond.

Mechanisms for enhanced ferroelectric properties in ultra-thin Hf0.5Zr0.5O2 film under low-temperature, long-term annealing

To gain insight into the ferroelectric mechanisms under reduced thermal budget and thickness scaling, a 4.6 nm ultra-thin ferroelectric Hf0.5Zr0.5O2 capacitor compatible with back-end-of-line (BEOL) processes (all conducted at temperatures ≤350 °C) is investigated in this work. Through O3 pretreatment at the bottom electrode (BE) interface and controlled temperature modulation of the crystalline phase, the capacitor exhibits exceptional ferroelectric (FE) properties following low-temperature (350 °C) and long-term (300 s) rapid thermal annealing (RTA). These properties include high remanent polarization (2Pr ∼ 28.53 μC/cm2), low coercive voltage (Vc ∼ 0.43 V), effective leakage suppression, robust endurance (∼1010 cycles without hard breakdown), and a desirable high dielectric constant. The main mechanisms identified include tetragonal phase nucleation under enhanced tensile stress via the oxidized BE layer (TiO2), crystalline growth controlled through RTA temperature modulation, and phase transition to the ferroelectric orthorhombic phase under electric field cycling. This research provides valuable insights for the development of BEOL-compatible nonvolatile FE memories.

Reactive Noble-Gas Compounds Explored by 3D Electron Diffraction: XeF2-MnF4 Adducts and a Facile Sample Handling Procedure.

Recent advances in 3D electron diffraction (3D ED) have succeeded in matching the capabilities of single-crystal X-ray diffraction (SCXRD), while requiring only submicron crystals for successful structural investigations. One of the many diverse areas to benefit from the 3D ED structural analysis is main-group chemistry, where compounds are often poorly crystalline or single-crystal growth is challenging. A facile method for loading and transferring highly air-sensitive and strongly oxidizing samples at low temperatures to a transmission electron microscope (TEM) for 3D ED analysis was successfully developed and tested on xenon(II) compounds from the XeF2-MnF4 system. The crystal structures determined on nanometer-sized crystallites by dynamical refinement of the 3D ED data are in complete agreement with the results obtained by SCXRD on micrometer-sized crystals and by periodic density-functional theory (DFT) calculations, demonstrating the applicability of this approach for structural studies of noble-gas compounds and highly reactive species in general. The compounds 3XeF2·2MnF4, XeF2·MnF4, and XeF2·2MnF4 are rare examples of structurally fully characterized xenon difluoride-metal tetrafluoride adducts and thus advance our knowledge of the diverse structural chemistry of these systems, which also includes the hitherto poorly characterized first noble-gas compound, "XePtF6".

Enhancement of photodetector performance of aluminum-doped zinc oxide thin films fabricated via SILAR method: Structural, optical, and electrical analysis

This study presents a comprehensive analysis of the structural, optical, electrical, and photosensing characteristics of aluminum-doped zinc oxide (Al:ZnO) thin films, fabricated via successive ionic layer adsorption and reaction (SILAR) techniques. The Raman and X-ray diffraction (XRD) analyses validated the hexagonal wurtzite structure and revealed that Al doping enhances crystallinity and crystal growth of ZnO. The average crystallite size increased from 21.6 nm in undoped sample to 23.8 nm in 5.0 wt% Al-doped sample, while strain effects decreased from 4.67 × 10-3 to 4.36 × 10-3. Scanning electron microscopy (SEM) images revealed improved film morphology and more defined geometries with increased Al doping, while energy-dispersive X-ray analysis (EDAX) confirmed successful Al integration into the ZnO lattice. Optical analyses indicate a narrowing of the ZnO bandgap to 2.81 eV in 5.0 wt% Al:ZnO from 3.02 eV in the undoped variant, while photoluminescence (PL) peak positions remains unchanged. Time-resolved fluorescence (TRF) indicated a reduction in electron lifetime with higher Al doping. Furthermore, Hall effect assessments reveal a decrease in carrier mobility and electrical resistivity, alongside a rise in carrier concentration with higher Al content. The photodetection efficacy was substantially improved with Al doping, particularly at 2.5 wt% Al, achieving a responsivity of 42.5 × 10-2 A/W, external quantum efficiency of 99.3 %, and detectivity of 1.8 × 1011 Jones. These findings exhibit that Al-doping substantially enhances the photodetection properties of ZnO thin films.

(Invited) Engineering Nanocomposite Substrates for Metal Deposition

Reversible metal plating is at the heart of aqueous based energy storage. Since virtually all metal anodes, e.g., Fe, and Zn, operate outside the stability window of water, it is thus essential to minimize their surface area by controlling the nucleation and growth during deposition and the pit formation during stripping.While epitaxial growth has shown promise as exemplified by the horizontal zinc deposition on graphene, an approximate heteroepitaxy, we will focus our effort in developing a nanocomposite substrate that promotes uniform nucleation sites and fast surface transport. The strategy is potentially highly scalable to address the need for large scale storage. Recently, we have shown that a nanocomposite substrate can induce single crystalline Li growth. By reacting FeF3 with Li, a nanocomposite of Fe and LiF is formed which features Fe nanoparticles of < 2 nm in size uniformly distributed in a matrix of LiF. Despite the global lithiophobility of the substrate, nano Fe domains provide energetically uniform nucleation sites for Li deposition while LiF enables rapid surface transport. Corporative merging of neighboring seeds lead to the formation of single crystalline Li. Unlike single crystal substrates, the nanocomposite features uniformly distributed, energetically equivalent sites for nucleation.We have adopted a similar strategy for Fe and Zn deposition. Preliminary results show that significantly improved macroscopic uniformity is achieved with the nanocomposite substrate. We will discuss materials requirements for operation in an aqueous environment and the general applicability of the approach for other materials.

Phosphorus doped Li2FeSiO4 thin films prepared by magnetron sputtering as high-performance thin-film cathode materials

Polycrystalline Li2FeSiO4 (LFS) and Li2FePxSi1-xO4 (LFSP) thin film cathode materials tested in quasi-solid thin-film Li-ion cells have been synthesized using radio frequency magnetron sputtering in combination with rapid thermal annealing. The thin films were characterized for their phase and morphology using X-ray diffraction analysis (XRD), scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS). The charge transport properties and electrochemical performance of the films were evaluated through constant current charge-discharge tests, cyclic voltammetry, rate performance testing, electrochemical impedance spectroscopy (EIS), and galvanostatic intermittent titration technique (GITT). The research findings revealed that after the sputtering growth process, during rapid annealing at 850 °C, the as prepared amorphous Li2FeSiO4 thin film showed selective crystalline growth, while crystallized grains on the surface of Li2FeSi0.95P0.05O4 thin films exhibited a fusion like and relatively regular distribution. The electronic conductivity and ionic conductivity of Li2FeSi0.95P0.05O4 thin films were measured at 6.60 × 10−7 S·cm−1 and 4.87 × 10−7 S·cm−1, respectively. The Li2FeSi0.95P0.05O4 thin film displayed an initial discharge specific capacity of 224.05 mAh g−1 at a rate of 0.1 C, with a capacity retention of 73.5 % after 100 cycles in half-cell structure. The assembled Li2FeSi0.95P0.05O4/Li1.3Al0.3Ti1.7(PO4)3/Li quasi-solid-state battery presented an initial discharge specific capacity of 195.62 mAh g−1 at 0.1 C, with a capacity retention of 55.03 % after 100 cycles. This study offers a valuable reference for the fabrication and doping modification of poly-anion-type Li2FeSiO4 cathode thin film materials, thus aiding the progress of next-generation thin-film quasi-solid-state lithium-ion batteries.

The Development and Atomic Structure of Zinc Oxide Crystals Grown within Polymers from Vapor Phase Precursors.

Sequential infiltration synthesis (SIS), also known as vapor phase infiltration (VPI), is a quickly expanding technique that allows growth of inorganic materials within polymers from vapor phase precursors. With an increasing materials library, which encompasses numerous organometallic precursors and polymer chemistries, and an expanding application space, the importance of understanding the mechanisms that govern SIS growth is ever increasing. In this work, we studied the growth of polycrystalline ZnO clusters and particles in three representative polymers: poly(methyl methacrylate), SU-8, and polymethacrolein using vapor phase diethyl zinc and water. Utilizing two atomic resolution methods, high-resolution scanning transmission electron microscopy and synchrotron X-ray absorption spectroscopy, we probed the evolution of ZnO nanocrystals size and crystallinity level inside the polymers with advancing cycles─from early nucleation and growth after a single cycle, through the formation of nanometric particles within the films, and to the coalescence of the particles upon polymer removal and thermal treatment. Through in situ Fourier transform infrared spectroscopy and microgravimetry, we highlight the important role of water molecules throughout the process and the polymers' hygroscopic level that leads to the observed differences in growth patterns between the polymers, in terms of particle size, dispersity, and the evolution of crystalline order. These insights expand our understanding of crystalline materials growth within polymers and enable rational design of hybrid materials and polymer-templated inorganic nanostructures.

In Situ Growth of Lead‐Free Double Perovskite Micron Sheets in Polymethyl Methacrylate for X‐Ray Imaging

AbstractPb‐free double‐perovskite (DP) scintillators are highly promising candidates for X‐ray imaging because of their superior optoelectronic properties, low toxicity, and high stability. However, practical applications require Pb‐free DP crystals to be ground and mixed with polymers to produce scintillator films. Grinding can compromise film uniformity and optical properties, thereby affecting imaging resolution. In this study, an in situ fabrication strategy is proposed to facilitate the crystalline growth of Pb‐free Cs2AgInxBi1‐xCl6 micron sheets in polymethyl methacrylate in a single step. By adjusting the In3+/Bi3+ ratio, Cs2AgIn0.9Bi0.1Cl6/PMMA composite films (CFs) with excellent scintillation properties are obtained, including a light yield of up to 32000 photons per MeV and an X‐ray detection limit of 87 nGyairs−1. This strategy also enabled the production of large Cs2AgIn0.9Bi0.1Cl6/PMMA CFs, which demonstrated favorable flexibility and stability, fabricating products with advanced eligibility for commercial applications. The CFs exhibited outstanding performances in X‐ray imaging, producing high‐resolution structures and providing a new avenue for the development of Pb‐free DP materials in fields such as medical imaging and safety detection.

Heteroepitaxial growth of Ga2O3 thin films on Al2O3(0001) by ion beam sputter deposition

Deposition of epitaxial oxide semiconductor films using physical vapor deposition methods requires a detailed understanding of the role of energetic particles to control and optimize the film properties. In the present study, Ga2O3 thin films are heteroepitaxially grown on Al2O3(0001) substrates using oxygen ion beam sputter deposition. The influence of the following relevant process parameters on the properties of the thin films is investigated: substrate temperature, oxygen background pressure, energy of primary ions, ion beam current, and sputtering geometry. The kinetic energy distributions of ions in the film-forming flux are measured using an energy-selective mass spectrometer, and the resulting films are characterized regarding crystalline structure, microstructure, surface roughness, mass density, and growth rate. The energetic impact of film-forming particles on the thin film structure is analyzed, and a noticeable decrease in crystalline quality is observed above the average energy of film-forming Ga+ ions around 40 eV for the films grown at a substrate temperature of 725 °C.