Cheung Functions Research Articles

Enhanced electrical parameters of the Au/n-Si Schottky barrier diodes with graphite/graphane oxide doped PVC interlayer

In this work, Schottky Barrier diodes (SBDs) formed on n-Si substrates were created using polyvinyl-chloride (PVC) and graphite/graphene-oxide (Gt/GO) nanoparticles (NPs) doped PVC interlayers and the conduction mechanisms of the structures were compared to the reference Au/n-Si (MS) diode. The characterization methods, including x-Ray Diffraction (XRD), Field Emission Scanning Electron Microscope (FE-SEM), and Energy Dispersive x-Ray (EDX), were used to analyze Gt/GO NPs and examine their structural, morphological, and analytical properties. In addition to the standard I-V method, modified Norde and Cheung methods were applied to analyze the forward bias I-V characteristics to determine the impact of pure-PVC and (PVC: Gt-GO) interlayers’ main electronic parameters on the SBDs. The surface state density (N ss ) depending on energy was also determined from the forward bias current–voltage by considering the voltage-dependent ideality coefficient, n(V), and barrier height (BH), ΦB(V). The outcomes showed that, as compared to MS structures, both the pure-PVC and (PVC: Gt-GO) interlayer leads to a decrease of n, leakage-current, N ss , an increase of rectification ratio (RR), shunt-resistance (R sh ) and zero-bias barrier-height (Φ B0 ). The differences in the electronic parameters observed between the I-V, Norde, and Cheung functions indicate that these parameters are highly reliant on the voltage and the computation method utilized. The barrier inhomogeneities at the metal/semiconductor surface also affect the current-transport or conduction mechanisms.

Electric and dielectric responses of Au/n-Si structure by Mn doped PVC interfacial layers

This paper has investigated and compared the impact of polyvinyl chloride (PVC) without/with manganese (Mn) metallic nanoparticles interfacial layer on the electric and impedance characteristics of Schottky diode (SD) with a structure of Au/n-Si (MS). The structures of these two metal-polymer-semiconductor (MPS) SDs are Au/PVC/n-Si and Au/PVC:Mn/n-Si. A detailed description of the SDs manufacturing process is given. The x-ray diffraction (XRD) analysis, Scanning Electron Microscope (FE-SEM) images, and Electron Dispersive x-ray (EDX) spectroscopy are three methods that have been utilized to examine mean size of crystallite, morphology of surface, purity specification. The fundamental electronic variables of these devices are ascertained and contrasted with one another using the I-V characteristic measurement at ±6 V. Ohm’s law, Thermionic Emission (TE) theory, modified Norde, and Cheung functions are used to calculate the SDs’ leakage current (I0), ideality coefficient (n), potential barrier height (BH), shunt (Rsh), and series (Rs) resistances. Investigations are conducted on the energy dependence of surface states density (Nss) and the current conduction mechanisms (CCMs) for both reverse and forward biases. These interfacial layers are known to decrease the n, Rs, and Nss. The PVC polymer interlayer leads to improve the efficiency of the MS-type SD, but it does not when doped by Mn nanoparticles. Additionally, by measuring impedance at a bias of 1.5 V and 100 Hz-1 MHz frequency range, the frequency dependence of dielectric properties of the prepared SDs is studied. The dielectric permittivity, dielectric loss tangent, electronic modulus, and ac electronic conductivity of these SDs are all studied.

Effect of the insertion of silver nanoparticles on the performance and electrical features of Ag/SiNWs Schottky diode

In this paper, we studied the effect of the passivation of silicon nanowires (SiNWs) by silver nanoparticles (AgNPs) on the efficiency of Ag/SiNWs/Si Schottky diodes. SiNWs are obtained by one-step Ag-assisted chemical etching method. AgNPs were deposited on SiNWs using an electroless dipping method. Schottky junction devices have been successfully made using silicon nanowires coated with silver nanoparticles. The current–voltage (I-V) characteristics of Ag/AgNPs-SiNWs Schottky diode have been investigated by varying the immersion time in silver nitrate solution from 1 to 5 min. The I-V characteristics presented in logarithmic scale confirmed the domination of SCLC conduction mechanism at high voltage. The ideality factor (n), height of potential barrier (φb) and series resistance (Rs) of diodes are calculated by adopting the Cheung method. Compared to the Ag/SiNWs Schottky junction, the diode that presents AgNPs at the interface shows a significant improvement in electrical parameters. The potential barrier reaches 1.09 eV and the ideality factor is reduced to 2.64 with the presence of AgNPs for an immersion time of 1 min. Norde’s equation has also been used to calculate the series resistance and the potential barrier. The results obtained by Norde method are slightly shifted compared to those found by Cheung functions while the findings concerning the optimization of the immersion time are practically the same.

Electrical Properties of Laser Patterned Schottky Diode with ALD-Grown TiO2 Interlayer.

Heterojunction formation is the key to adjusting the electronic and optoelectronic properties of various semiconductor devices. There have been various reports on the formation and importance of semiconducting heterojunction devices based on metal oxides. Titanium dioxide (TiO2) is one of the metal oxides that has many unique properties. TiO2's importance is due to its physical and chemical properties such as large band gap, large permittivity, stability, and low leakage current density. In this context, we present the electrical properties of the metal-insulator-semiconductor (MIS) type-TiO2-based Schottky barrier diode (SBD) in the study. To create a thin layer of TiO2 on p-type silicon (p-type Si) patterned partially by the laser-induced periodic surface structure (LIPSS) technique, an atomic layer deposition (ALD) technique was used in the study. For comparison, the current-voltage (I-V) characteristics of the TiO2-based laser-patterned (LP) and nonlaser-patterned (non-LP) diodes were measured at 300 K and in the dark at ±5 V. Classical thermionic emission (TE) theory and Cheung functions were used to investigate the critical diode parameters of the diodes, including ideality factor (n), series resistance (Rs), and barrier height (Φb). The n values were obtained as 4.10 and 3.68 from the TE method and Cheung functions for the LP diode, respectively. The Φb values were found as 0.68 and 0.69 eV from the TE method and Cheung functions, respectively. According to experimental results, the laser patterning resulted in an increase in the Φb values and a decrease in the n values. After laser patterning, it was observed that the device worked effectively, and the ideality factor and barrier height values were improved. This study provides insight into the fabrication and electrical properties of TiO2-based heterojunction devices.

Optoelectronic properties of Au/n-type Si semiconductor structures with SiO2 interlayer

In this study, we investigated the effect of light intensity on electrical and photovoltaic properties using current-voltage (I–V) measurements at room temperature of Au/n-type Si structures with SiO2 interface layer. At each light intensity, the obtained main electrical characteristics such as ideality factors (n), barrier heights (Φbo), rectification ratios (RR), saturation currents (I0) and series resistances (RS) of Au/SiO2/n-type Si structures were calculated from both thermionic emission (TE) and Cheung methods using I–V measurements and compared to each other. Experimental results showed that while the n and I0 values increased with the increase in the light intensity, the Φbo and RR values decreased. While the ideality factor values obtained using the TE method ranged between 1.973 (at dark) and 2.250 (for 100 mW/cm2), these values were obtained between 3.227 and 3.482 using the Cheung method. At the same time, while the barrier height values obtained using the TE method ranged between 0.865 eV (at dark) and 0.817 eV (for 100 mW/cm2), these values were obtained between 0.773 eV and 0.742 eV using the Cheung method. It was observed that while the n values obtained from TE theory were smaller than the values obtained from the Cheung method, the Φbo values were larger than the values obtained from the Cheung function. Furthermore, for the Au/SiO2/n-type Si structures, the photovoltaic parameters such as short circuit current (Isc) and open circuit voltage (Voc) and photocurrent (Iph) were examined under dark, daylight and various light intensities (from 20 to 100 mW/cm2).

Electrical, structural and photovoltaic properties of acceptor dye modified Au/n-Ge heterostructure

n-Ge heterostructure is fabricated using organic dye interlayers such as sulforhodamine-G (SRG) using low-cost spin coating technique and explored its electrical and structural features. The I–V measurements of the Au/SRG/n-Ge heterostructure (HJ) show good rectification behavior. It has been noticed that the barrier height (0.73 eV) of the Au/SRG/n-Ge heterojunction was significantly higher than the Au/n-Ge Schottky diode (SD) (0.63 eV). Cheung's function and the Norde method has been utilized to evaluate the various barrier parameters to understand the non-ideal behavior of the contacts at higher bias region. The low value of the series resistance for HJ (53 Ω) is observed than compared to the SD without organic dye (2974 Ω). Barrier parameters evaluated from the Norde method were compared with those from the Cheung method and found that they confirmed the consistency of Schottky barrier parameters obtained from both techniques. The transport properties of the HJ and SD in the forward bias region are evaluated using the log (I) vs. log (V) plot. At larger forward bias voltages, a change in the drift of current conduction is observed from Ohmic current conduction to traps-assisted SCLC conduction. This may be ascribed to the presence of defects or traps at the n-Ge and SRG interface possibly associated with the organic dye. Also, the photovoltaic properties of the SRG/n-Ge heterostructures were evaluated at 100 mW/cm2 showing significant photoresponse indicates the usage of SRG dyes in photosensitive applications.

High performance of Ag/AlN/Si Schottky diode: Study of the DC sputtering power effect on its electrical properties

The DC sputtering power (DCSP) effect on the chemical composition, structural and electrical properties of Ag/AlN/Si Schottky diode was studied. The AlN films grown on Si substrate were examined by X-ray diffraction (XRD), Fourier Transformed Infra-Red (FTIR), and Raman spectroscopy. The analyzes by XRD, FTIR and Raman show stability at the level of the structure and the qualitative chemical composition of the AlN layer for DCSP of 200 W and 400 W. However, the quantity of chemical compounds on the surface of AlN is affected by this variation. From Current-Voltage (I-V) measurements, the ideality factor (n), barrier height (φb), and series resistance (Rs) were extracted by adopting Cheung functions. Diodes with an AlN interlayer elaborated at 400 W have good rectifying behavior with n, Rs and φb of 3.11, 1930 Ω, and 0.93 eV, respectively. The enhancement of the Ag/AlN/Si diode performance was attributed to the reduction of undesirable impurities in the Ag/AlN interface as well as the morphological improvement of the AlN layer. Capacitance-Voltage (C-V) measurements showed that carrier donor concentrations are strongly affected by DC sputtering power. The elaborate structures may provide new materials with electrical properties having a wide range of applications in electronics and photovoltaic field.

Structural, chemical states, electrical properties and forward transport phenomena of Ti/MnO2/p-InP heterostructure with a transition metal oxide MnO2 interlayer

The study examines the surface topology, optical, structural and electrical characteristics of e-beam evaporated manganese dioxide (MnO2) films on p-InP using AFM, FESEM, UV–Vis, XRD, XPS and I–V procedures. The surface roughness of the MnO2 was smooth from AFM and FESEM analysis. The optical bandgap of MnO2 film was extracted from Tauc's plot. The outcomes endorse that the MnO2 layer deposited on InP. Then, the Ti/MnO2/p-InP heterostructure (HS) was created with an MnO2 interlayer to check the consequence of MnO2 on the electrical features of the Ti/p-InP Schottky diode (SD). The I–V results demonstrated that the higher Φb is acquired for the HS (0.90 eV) than the SD (0.84 eV), implying the MnO2 layer alters the Фb. Also, the Фb, ‘n’ and RS of the SD and HS can be determined by utilizing Cheung's and Norde's functions. The estimated Фb was almost similar, indicating the methodologies applied here are sturdy and effective. The determined NSS of the HS is lesser than the SD, implying that the MnO2 interlayer has a significant role in the decrease in NSS. The forward bias log (I)-log(V) plot of the SD and HS indicates that the ohmic behavior and space charge limited the conduction process at lower-bias and higher-bias segments, respectively. The study outcomes suggested that the transition metal oxide MnO2 layer would be favourable for creating MIS devices.

Electrical Characteristics of Cadmium Sulfide/4-Amino-2-Methyl-Quinoline Heterojunction Structure

We fabricated a heterojunction structure composed of n-CdS and p-C10H10N2 films. The CdS film was prepared using the CBD method, while the C10H10N2 film was prepared using the spin coating method. Later, we performed the current-voltage (I-V) measurement of this PN diode which we made using Keithley 2400 sourcemeter. As can be seen from the logI-V diagram, this heterojunction structure exhibits rectifying properties. Using traditional methods, an ideality factor (n) of 1.93 and a barrier height value (Φb) of 0.79 eV were determined. An ideality factor of more than one indicates non-ideal I-V behavior in the CdS/C10H10N2 heterojunction diode formed. The interface layer, interface states and series resistance are some of the causes of this deviation. Moreover, Cheung's functions and a modified Norde function were used to determine the diode parameters, such as ideality factor, barrier height, and series resistance. With the Cheung method, n=4.33, series resistance (RS)=168.65 kΩ and Φb=0.62 eV were found. Additionally, RS=686.08 kΩ and Φb=0.78 eV were found by the Norde method. Consistent barrier height values were found in all methods through comparison, suggesting compatibility. However, it was discovered that the series resistance values yielded by the Norde function exceeded those obtained by the Cheung functions.

The influence of the physicochemical processes on the electrical response of Al/p-Si structure with etched surface

In this paper, the electrochemical etching process is used for surface modification of the p-Si wafer, named as porous silicon (PS), in the metal–semiconductor (MS) type Schottky diode (SD) with a structure of Al/p-Si. Five regions of PS wafer with different etching rates are selected for comparison of them which are called P2, P3, P4, and P5 (P1 is the reference area without porosity). The morphological, structural, and electrical properties of the PS used in the MS-type SD are investigated using field-emission scanning electron microscope (FE-SEM) images, energy dispersive X-ray (EDX) analysis, and current–voltage (I–V) characteristics, respectively. The FE-SEM images show a meaningful effect on the porosity. The EDX spectrum demonstrates the importance of the chemical effects in addition to the physical changes in the porosity process of the p-Si wafer. The reverse-saturation current (I0), ideality factor (n), barrier height at zero-bias (ΦB0), and series/shunt electrical resistances are also computed and compared. Some of these parameters (n, Rs, BH) are determined using different methods, namely Thermionic emission (TE), Cheung functions, and modified Norde, and they exhibit strong agreement with each other. The energy-dependent profiles of surface states (Nss) are estimated from the I–V data by considering the voltage dependence of ΦB (V) and n(V). All the experimental findings indicate that the etching process of the p-Si wafer significantly influences the electrical performance of the Al/p-Si Schottky diode by increasing the extent of etching.

Evaluation of the current transport mechanism depending on the temperature of Schottky structures with Ti:DLC interlayer

This study emphasizes the possible current transport mechanisms (CTMs) of the Schottky structure with Ti:DLC interlayer for a wide temperature interval (80–470 K). In the related temperature interval, the ideality factor (n) and barrier height (ΦBo) values changed from 6.95 to 2.28 and 0.19 to 0.87 eV, respectively. These temperature dependent n and ΦBo values show that the CTM deviates significantly from the standard TE theory and that the barrier at the metal/semiconductor interface is not homogeneous. Additionally, the observed deviation from linearity of the Richardson plot (RP) at low temperatures and obtained very low Richardson constant (A*) at higher temperatures when compared to its theoretical value are other evidence of deviation from TE theory. The observed two separate linear in the ΦBo-e/2kT plot reveal the Double-Gaussian distribution (DGD) corresponding low and moderate temperature intervals. The modified RP based on the GD of the BH gives a closer to the theoretical value of A* . Along with CTM analyses, the structure’s series resistance (RS) was estimated via both Ohm’s law and Cheung functions. Finally, the Card-Rhoderick method was applied to achieve the variations of the interface trap density (Dit) depending on energy for each temperature by considering voltage-dependent n and ΦB.

Characterization of the electrical properties of MPS schottky structures incorporating Fe doped polyvinyl chloride (PVC)

This paper explores the effects of the organic interfacial layer on the electrophysical characteristics of Schottky barrier diodes (SBDs). Three types of SBDs were fabricated: Au-Si (referred to as MS), Au/PVC/Si (referred to as MPS1), and Au-/PVC:Fe/Si (referred to as MPS2). Fe nanopowders were subjected to analysis using XRD, SEM, and EDX techniques to investigate their structural and optical characteristics. To investigate the conduction mechanisms of these diodes, I-V characteristics were examined using thermionic-emission (TE), Cheung, and Norde functions. The surface-state density (N ss ) distribution of energy was determined by analyzing the current–voltage (IF-VF) curve under forward bias conditions. This analysis considered the voltage-dependent barrier height (BH) and ideality factor (n(V)). The results demonstrated that the polymeric interlayer without Fe nanoparticles reduced N ss by a factor of 7, while the presence of Fe nanoparticles led to a two-order magnitude decrease, resulting in improved efficiency in comparison with MS structures. The obtained results indicated that including a polymeric layer in MPS structure enhanced their electrophysical features compared to MS diodes, and significantly increased rectification by 15–45 times. In summary, the existence of an organic interfacial layer significantly altered the conduction mechanisms and electrophysical characteristics of MPS diodes. It was found that the addition of Fe nanoparticles in the interlayer resulted in substantial improvements in N ss , efficiency, rectification, and conduction characteristics compared to MS diodes.

Synthesis of TiO2 Nanotubes and Photodiode Performance

In this study, titanium dioxide (TiO2) nanotubes were produced by anodization method using glycerol-based electrolyte. Structural characterization was investigated with SEM images and XRD pattern. The rectifying properties of n-type semiconductor TiO2 nanotubes were investigated. Current-voltage (I-V) measurements of the Pt/TiO2 nanotubes/Ti device were made at room temperature, in the dark and under different illumination conditions. The basic diode parameters were calculated by using thermionic emission (TE), Cheung and Norde functions from the I-V measurements of the devices in dark conditions. The ideality factors and barrier height of the Pt/TiO2 nanotubes/Ti device were calculated 1.25 and 0.91 eV, respectively by the TE method. According to the results obtained, the Pt/TiO2 nanotubes contact has a rectifying feature. In addition, the photovoltaic properties of the devices were examined by making I-V measurements at illumination intensities between 30 and 100 mW/cm2. As a result, it has been evaluated that the device can also be used as a photodiode.

Analysis of temperature dependent current-voltage and frequency dependent capacitance-voltage characteristics of Au/CoO/p-Si/Al MIS diode

In this study, the production and electrical characterization of Schottky circuit elements of Au/CoO/p-Si/Al (MIS) structure were investigated. Diode parameters such as the ideality factor (n), barrier height (Φb) and series resistance of Au/CoO/p-Si/Al structures were calculated from the forward bias I-V characteristics of the diode using the different methods such as Thermionic Emission method (TE), Cheung functions and Norde method. The variations of diode parameters from I-V measurements depending on the temperature were examined. In addition, diffusion potential (Vd), barrier height (Φb), Fermi energy level (Ef) and free carrier concentration (Na) were calculated from the C-V measurements of the diode. The variations of these values with frequency were examined from the C-V measurements.

Temperature influences of the interfacial layer in MOS (Pt/TiO2/Si) structures

In this paper present I-V and C-V electrical characteristics of MOS (Pt/TiO2/Si) were reported. In the I-V characteristics the various electric parameter estimated such as the ideality factor (n), barrier height (FB), leakage current (Ic) and saturation current (Io) were estimated and further analyzed with Cheung functions. These electrical parameters were observed to be varying with heat treatment. The C-V characteristics, flat band voltage (VFB), interface trap density (Dit), effective charge density (Neff) and oxide trapped charge (Qot) were estimated and analyzed. The variation of these values with annealing temperature was correlated with restructuring and rearrangement of TiO2/SiO2 atoms at the metal/silicon interface. The hysteresis loop in counter clock wise voltage between -1 V to 1 V at 1 MHz frequency, after 600 °C heat treatment show the strong accumulation region, this may be due to the reduced interface trapped charge and dangling bond.

A novel thiophene-based D-π-A type organic material: Synthesis, characterization and Schottky diode applications

Herein, a newly designed π-conjugated D-π-A type organic material, namely TPA-T-DCV 9, was synthesized in excellent yield by introducing triphenylamine as electron donor and dicyanovinyl unit attached to the benzene ring as electron acceptor at positions 3 and 4 of the central thiophene skeleton as π-linker, respectively. The Au/TPA-T-DCV 9/p-Si/Al diode was fabricated by using TPA-T-DCV 9 material as interface material. The electrical properties of this diode were analyzed using the current–voltage (I-V) curve of the diode and it was determined that the use of TPA-T-DCV 9 material improved electrical charecteris. The I-V measuments of the diode are performed between 100 K and 325 K. According to calculations from TE theory, n value changes between 4.04 and 1.19 value for increasing temperature value, Φb value changes between 0.33 and 0.81 eV value with increasing temperature. In addition, Rs values calculated from Cheung functions vary between 2004 Ω and 10470 Ω with decreasing temperature value. From the temperature-dependent I-V graphs of the diode, it was determined that the diode parameters were in a strong change depending on the temperature gradient. The frequency response of capacitance–voltage (C-V) measurements of Au/TPA-T-DCV 9/p-Si/Al diode was investigated.

Voltage Dependent Profiles of the Surface States and Series Resistance (Rs) in the Al-(Cd:ZnO)-pSi Schottky Diodes (SDs) Utilizing Voltage-Current (IV) Characteristics

In this work, the main electronic parameters of the performed Al-(CdxZn1-xO)-pSi Metal/Interface-layer/Semiconductor (MIS) type Schottky Diodes (SDs) were investigated by utilizing IV characteristics at 300 K. The (CdxZn1-xO) interfacial layer was grown on the pSi wafer by utilizing the sol-gel technique. Ideality-factor(n), potential barrier ФBo, Rs, shunt resistance (Rsh), and rectification rate (RR) (Iforward/Ireverse) values were calculated based on thermionic emission (TE) theory and Cheung function between -4.5V and 4.5V. There parameters also varied for the samples with different doping ratios. Energy-dependent surface state profiles of them were also extracted from the forward bias IV data, and their magnitude was found on the order of 1012eV-1.cm-2 which is very appropriate for the MIS type SD. The values of n, barrier height (BH), ФBo, and RR changed from 4.347, 0.582 eV, 5.74x103 to 5.293, 0.607 eV, 2.83x106. These results show that electronic parameters of these SDs are a strong functions of voltage, calculation method, and the doping rate of the Cadminium (Cd) interfacial layer. The best ratio for Cd: ZnO was determined to be 30%; therefore, this interfacial layer may be used instead of traditional insulator layers to enhance the quality of Metal/Semiconductor (MS) type SDs.

Electronic Properties of FLG/InP Schottky Contacts

Graphene (Gr) is of great interest in the development of new electronic, photonic, and composite materials. The physical properties of Gr can vary depending on the number of layers, and this unique property makes it a potential material for different electronic applications. In this study, few-layer graphene (FLG) film was spin-coated onto the InP semiconductor surface and the FLG/n-InP Schottky contact was produced. The properties and quality of the FLG nano-film were determined by using Raman spectroscopy. Parameters such as ideality factor, barrier height, and series resistance of Schottky contacts were calculated using current-voltage (I-V) curves. With the Gaussian distribution, the mean ideality factor of the Gr/InP contacts was found to be =1,47, and the mean barrier height values were found to be =0.68 eV. The standard deviation values were calculated as σ=0.32 for the ideality factor and σ=0.06 eV for the barrier height. In addition, the series resistance values were calculated from the Cheung functions and were found to be in agreement with the literature. Finally, the current conduction mechanisms of the Gr/n-InP structure were revealed by examining the logarithmic I-V characteristics.

Investigation of photon-induced effects on some diode parameters and negative capacitance of the Schottky structure with Zn-doped organic polymer (PVA) interface

Variation in the electrical parameters depending on illumination and the formation of negative capacitance (NC), and inductive behavior (IB) of Schottky structures interlaid with Zn:PVA, were executed by current/impedance-voltage (I/Z-V) measurements in the dark and under 200 mW cm−2 illuminance. To designate the voltage or calculation method effects on the ideality factor (n), barrier height (BH-Φ B ), and series resistance (R s ), these parameters were extracted from different methods. These parameters extracted through the Thermionic-emission (TE) theory, Ohm’s law, Norde and Cheung functions were compared with each other. The reverse bias ln(I R )−V R 0.5 plots were also drawn to designate the validity of Poole-Frenkel and Schottky emissions. In Z-V measurements, NC and related IB phenomena were observed at 500 kHz-fixed frequency in the dark and under illuminance. The interface states (D it ) variation depending on energy and voltage was obtained using I-V and C/G-V measurements and related equations. The calculations of the diffusion-potential (V D ), acceptor-atoms (N A ), Fermi-energy (E F ), and Φ B (C-V) values were performed by fitting the observed linear in the reverse bias C −2 -V plot. A detailed analysis of NC was performed via the drawn C/(G/ω)-I plots for positive voltages. All experimental results show that the used calculation method, illumination, and voltage are highly effective on the electrical parameters.

The electrical response of the Au/Mn2Mo6S8/p-Si diode under different physical stimuli

Mn2Mo6S8 material was synthesized by solid state synthesis method and coated on p-Si by thermal evaporation method to produce Au/Mn2Mo6S8/p-Si photodiode. Morphological characterization was performed by taking XRD and EDX analyzes and SEM images, and the crystal structure of the material was seen. Electrical characterization was performed by various methods (TE, Cheung and Norde functions) by taking temperature-dependent I-V measurements between 100 and 340 K under dark condition. The I-V measurements were made in various illuminations at room temperature and the photo response of the device was examined. The devices capacitor properties were calculated by making C-V measurements at various frequencies. The results showed that the I-V characteristic of the Au/Mn2Mo6S8/p-Si device were strongly dependent on temperature and the C-V characteristic was strongly frequency dependent. The results revealed that it is a suitable candidate material for optoelectronic devices.