Abstract
Graphene (Gr) is of great interest in the development of new electronic, photonic, and composite materials. The physical properties of Gr can vary depending on the number of layers, and this unique property makes it a potential material for different electronic applications. In this study, few-layer graphene (FLG) film was spin-coated onto the InP semiconductor surface and the FLG/n-InP Schottky contact was produced. The properties and quality of the FLG nano-film were determined by using Raman spectroscopy. Parameters such as ideality factor, barrier height, and series resistance of Schottky contacts were calculated using current-voltage (I-V) curves. With the Gaussian distribution, the mean ideality factor of the Gr/InP contacts was found to be =1,47, and the mean barrier height values were found to be =0.68 eV. The standard deviation values were calculated as σ=0.32 for the ideality factor and σ=0.06 eV for the barrier height. In addition, the series resistance values were calculated from the Cheung functions and were found to be in agreement with the literature. Finally, the current conduction mechanisms of the Gr/n-InP structure were revealed by examining the logarithmic I-V characteristics.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
