Channel Heterostructure Research Articles

First demonstration of 2T0C-FeDRAM: a-ITZO FET and double gate a-ITZO/a-IGZO FeFET with a record-long multibit retention time of >4-bit and >2000 s.

Conventional DRAM, consisting of one transistor and one capacitor (1T1C), requires periodic data refresh processes due to its limited retention time and data-destructive read operation. Here, we propose and demonstrate a novel 3D-DRAM memory scheme available with a single transistor and a single ferroelectric field-effect transistor (FeFET) DRAM (2T0C-FeDRAM), which offers extended retention time and non-destructive read operation. This architecture uses a back-end-of-line (BEOL)-compatible amorphous oxide semiconductor (AOS) that is suitable for increasing DRAM cell density. Notably, the device structures of a double gate a-ITZO/a-IGZO FeFET, used for data storage and reading, are engineered to achieve an enlarged memory window (MW) of 1.5 V and a prolonged retention time of 104 s. This is accomplished by a double gate and an a-ITZO/a-IGZO heterostructure channel to enable efficient polarization control in hafnium-zirconium oxide (HZO) layers. We present successful program/erase operations of the double gate a-ITZO/a-IGZO FeFET through incremental step pulse programming (ISPP), demonstrating multi-level states with remarkable retention characteristics. Most importantly, we perform 2T0C-FeDRAM operations by electrically connecting the double gate a-ITZO/a-IGZO FeFET and the a-ITZO FET. Leveraging the impressive performance of the double gate a-ITZO/a-IGZO FeFET technology, we have effectively showcased an exceptionally record-long retention time exceeding 2000 s and 4-bit multi-level states, positioning it as a robust contender among emerging memory solutions in the era of artificial intelligence.

Heterostructure channel designs for the topological interface state of surface water waves using topology optimization

The increase of the concentrated density of wave energy is conducive to improving the generation efficiency of wave power generation. Interface states induced in the heterostructure channels can be applied to concentrate the surface water wave. The optimal designs of heterostructure channels can be found through the topology optimization based on the multiple population genetic algorithm to induce a topological interface state with high transmission at the desired frequency. The introduction of the topological interface state effectively and steadily increases the wave energy density in a certain space and improves the robustness and the localization of the water wave concentrator. This topology optimization method provides a design scheme for the wave energy concentrator in the field of ocean engineering.

Tunable Band‐to‐Band Tunneling and Conducting Path Transition in Local‐Control‐Gate Heterostructure Transistor

AbstractTransition metal dichalcogenide (TMD) material‐based heterostructures have exhibited great potential for building advanced architectures in novel logic devices. A local‐control‐gate (LCG) transistor based on MoTe2/MoS2 heterostructure is fabricated and analyzed, illustrating its tunable electrical characteristics and achieving band‐to‐band tunneling (BTBT) enhancement with an improved peak‐to‐valley current ratio (PVCR) value of 3.04. Compared to the basic dual‐gate tunnel field‐effect transistor (TFET) structure, adding LCG at the bottom not only isolates defect‐induced doping effects from the deposition of top gate dielectrics, but also paves the way for broader applications in multivalued logic and artificial intelligence. Aiming to further verify the operating mechanism of conducting path transition and electrical characteristic trends, commercial technology computer‐aided design (TCAD) is systematically employed assisted by density functional theory (DFT). So that the transition of conducting paths in the heterostructure channel including interlayer quantum effects can be visibly demonstrated while applying various voltages to the LCG. In summary, this work highlights the feasibility of a new LCG structure with tunable electrical characteristics and presents DFT‐assisted TCAD simulations for effective verifications.

Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility

AbstractUltrawide bandgap (UWBG) semiconductors offer new possibilities to develop power electronics. High voltage operation for the off‐state as well as high temperature stability of the devices in on‐state are required. More than AlGaN/GaN heterostructures, AlGaN/AlGaN heterostructures are promising candidates to meet these criteria. Furthermore, the possibility to choose the Al molar fraction of AlGaN paves the way to more tunable heterostructures. In this study, the electronic transport properties of AlGaN channel heterostructures grown on silicon substrates with various aluminum contents, focusing on the temperature dependence of the electron mobility, is investigated. Experimental results from Hall effect measurements are confronted with carrier scattering models and deep level transient spectroscopy analysis to quantify limiting effects. These results demonstrated the significant potential of Al‐rich AlGaN channel heterostructures grown on silicon substrates for high power and high temperature applications.

Constructing Two-Dimensional (2D) Heterostructure Channels with Engineered Biomembrane and Graphene for Precise Scandium Sieving.

The special properties of rare earth elements (REE) have effectively broadened their application fields. How to accurately recognize and efficiently separate target rare earth ions with similar radii and chemical properties remains a formidable challenge. Here, precise two-dimensional (2D) heterogeneous channels are constructed using engineered E. coli membranes between graphene oxide (GO) layers. The difference in binding ability and corresponding conformational change between Lanmodulin (LanM) and rare earth ions in the heterogeneous channel allows for precisely recognizing and sieving of scandium ions (Sc3+). The engineered E. coli membranes not only can protect the integrity of structure and functionality of LanM, the rich lipids and sugars, but also help the Escherichia coli (E. coli) membranes closely tile on the GO nanosheets through interaction, preventing swelling and controlling interlayer spacing accurately down to the sub-nanometer. Apparently, the 2D heterogeneous channels showcase excellent selectivity for trivalent ions (SFFe /Sc≈3), especially for Sc3+ ions in REE with high selectivity (SFCe/Sc≈167, SFLa/Sc≈103). The long-term stability and tensile strain tests verify the membrane's outstanding stability. Thus, this simple, efficient, and cost-effective work provides a suggestion for constructing 2D interlayer heterogeneous channels for precise sieving, and this valuable strategy is proposed for the efficient extraction of Sc.

Studies on the coupling correlation and strain state of AlGaN/GaN double channel heterostructures grown by metal organic chemical vapor deposition

In this work, high quality AlGaN/GaN double channel heterostructures were grown by metal organic chemical vapor deposition and the coupling correlation between the two channels, as well as the strain state of this multilayer structure are investigated in detail. It was revealed that the stronger coupling correlation affect the 2DEG distribution and leads to the lower channel is similar to the upper channel with the thinner thickness of the upper channel. In addition, the impact of the multilayer strain state on the characteristics of double channel heterostructures was discussed. Moreover, the effects of coupling correlation and strain state on the performance of double channel high electron mobility transistor (HEMT) was shown by 2-D simulation. This work is not only beneficial for the further study of the double (multiple) channel heterostructures and devices, but also instructive to the design and realization of the future atomic hyperfine structures of nitride semiconductors.

Modulation Doped 2D InOx/GaOx Heterostructure Tfts Via Liquid Metal Printing

Indium gallium zinc oxide (IGZO) and similar wide bandgap metal oxides are among the most widely used channel materials for drive transistors in displays due to their excellent electronic mobility and their ultra-high transparency1. However, industry-standard processing involves expensive vacuum deposition and elevated activation temperatures to produce semiconducting thin films. Liquid metal printing (LMP) is an emerging technique for oxide semiconductor fabrication poised to overcome these drawbacks via scalable vacuum-free transfer of the native oxide layers formed by spontaneous surface oxidation of molten metals2–4. Heterostructures of these 1-4 nm 2D oxide layers provide unprecedented opportunities for engineering electrostatic control of multilayers in thin film transistors, leading to improved mobility, Ion/Ioff ratios, and faster switching capabilities. Likewise, the backchannel is of high importance to these devices, as selection of an appropriate capping layer can enhance performance via remote doping while also mitigating bias stress effects. Herein, we compare the results of heterostructure InOx/GaOx with pure InOx TFTs, which demonstrates the mobility enhancement provided by GaOx modulation doping.Bottom gate thin film transistors (TFTs) (Figures 1a and 1b) were fabricated on Si substrates with 100 nm of thermally grown SiO2. 4 nm thick InOx and GaOx were deposited at 240 ˚C and 180 ˚C, respectively, using a linear printing speed of 8 cm/s. InOx and GaOx were printed in less than 10 s, with no post annealing necessary. Figure 1c illustrates the proposed mechanism for electron donation from GaOx at the heterointerface with InOx. The conduction band offset between these materials results in band bending at the interface and an increased carrier concentration in the InOx layer. The substoichiometric, defective GaOx is expected to further enhance this effect. Figure 1d demonstrates the transfer characteristics of heterostructure InOx/GaOx in comparison with pure InOx. The improved mobility for the heterostructure (7.8 cm2/Vs) vs pure InOx (3.8 cm2/Vs) channels can be attributed to modulation doping provided by GaOx and can be analyzed by extracting the electronic density of states (eDOS). These results illustrate a unique capability of LMP, which is to engineer the electronic structure of highly conductive 2D oxides while maintaining electrostatic control.This work also investigates the material properties of these 2D oxide heterostructures by UV-vis, XRD and XPS characterization. UV-Vis analysis revealed that the GaOx capping layer induces band gap widening and enhanced transparency, which can be explained by the Burstein-Moss effect from modulation doping. Unique to this LMP process is also the low temperature crystallization of the InOx films. XRD showed that even with low deposition temperatures (200 – 240 ˚C), these InOx films are highly crystalline with grain sizes substantially larger than the film thickness. Finally, XPS analysis of the O1s peak was utilized to understand the stoichiometry and interactions between the InOx and GaOx layers.This work demonstrates an effective pathway to enhance electronic transport in semiconducting metal oxides through liquid metal printed 2D heterostructures. The ultrathin films produced by LMP are well suited for thin film devices requiring nm-scale electrostatic control for effective gating. Combining this 2D nature of LMP InOx with a 2D GaOx backchannel capping layer is shown to yield high-performance printed transistors. This approach demonstrates a rapid, open-air compatible and low temperature manufacturing method, elucidating the broad impact of this technology in display fabrication, low-cost and flexible electronics. H. Hosono, Nat Electron, 1, 428–428 (2018).K. A. Messalea et al., ACS Nano, 15, 16067–16075 (2021).R. S. Datta et al., Nat Electron, 3, 51–58 (2020).A. Jannat et al., ACS Nano, 15, 4045–4053 (2021).A. Goff et al., Dalton Transactions, 50, 7513–7526 (2021).C.-H. Choi, Y.-W. Su, L.-Y. Lin, C.-C. Cheng, and C. Chang, RSC Advances, 5, 93779–93785 (2015). Figure 1

Design of microwave β-(Al x Ga x )2O3/Ga2O3 lateral Schottky barrier diodes

High power microwave Schottky barrier diodes (SBDs) are required to develop detectors and mixers in advance the millimeter-wave (mm-wave) wireless technologies such as fifth generation long-term evolution. To achieve high efficiency and sensitivity in SBDs, materials/structures with high mobility and low series resistance are needed. In this regard, we have proposed the two dimensional electron gas of β-(Al x Ga)2O3/Ga2O3 heterostructure channel lateral SBDs (LSBDs) for the first time. To design high performance LSBDs, detailed physical models of both β-(Al x Ga)2O3 and Ga2O3 were studied and characterized with experimental results. These physical models were used to perform realistic numerical simulations of DC, small signal and large signal conditions. It was observed that the structural and compositional aspects of heterostructure are largely influencing the small signal sensitivity and cut-off frequencies. Also the large signal analysis reveals that the LSBD can operate in linear detection of microwave signals, up to 38 dBm. By scaling down the device to a sub-micron channel length, a cut-off frequency of 1.5 THz was achieved in the proposed LSBD. Comparison with state-of-the-art SBDs, the observations from DC, small signal and large signal analysis recommend the proposed β-(Al x Ga)2O3/Ga2O3 LSBDs for high power and mm-wave/sub-THz detector/mixer application.

Fully Printed Optoelectronic Synaptic Transistors Based on Quantum Dot-Metal Oxide Semiconductor Heterojunctions.

Optoelectronic synaptic transistors with hybrid heterostructure channels have been extensively developed to construct artificial visual systems, inspired by the human visual system. However, optoelectronic transistors taking full advantages of superior optoelectronic synaptic behaviors, low-cost processes, low-power consumption, and environmental benignity remained a challenge. Herein, we report a fully printed, high-performance optoelectronic synaptic transistor based on hybrid heterostructures of heavy-metal-free InP/ZnSe core/shell quantum dots (QDs) and n-type SnO2 amorphous oxide semiconductors (AOSs). The elaborately designed heterojunction improves the separation efficiency of photoexcited charges, leading to high photoresponsivity and tunable synaptic weight changes. Under the coordinated modulation of electrical and optical modes, important biological synaptic behaviors, including excitatory postsynaptic current, short/long-term plasticity, and paired-pulse facilitation, were demonstrated with a low power consumption (∼5.6 pJ per event). The InP/ZnSe QD/SnO2 based artificial vision system illustrated a significantly improved accuracy of 91% in image recognition, compared to that of bare SnO2 based counterparts (58%). Combining the outstanding synaptic characteristics of both AOS materials and heterojunction structures, this work provides a printable, low-cost, and high-efficiency strategy to achieve advanced optoelectronic synapses for neuromorphic electronics and artificial intelligence.

Printable Organic PIN Phototransistor and Its Application for Low Power and Noise Imaging Detection

The power consumption and the opto-electric noise of organic photo-detectors are the challenges for large-scale detecting and imaging applications to surpass. This article presents a new device concept of organic heterojunction PIN channel for photo-transistor. The presence of the channel's heterostructure enables rectifying capability and effective control of defect density, which leads to low power consumption (0.12 to 7.5 nW) and low dynamic noise (4.5 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">13</sup> Jones detectivity). Significantly, through adopting the highly efficient Perovskite Quantum Dots as intrinsic sensing core, the device exhibits high responsivity up to 7190 A/W. As we demonstrate a large-scale 10 × 20 imaging array with integrated photo-transistor, the output signals are read-out and rebuilt by I-V converting amplifier with analog-to-digital circuit and numerical computation method to visualize the functionality of the system.

Characterisation of short channel effects for 14 nm tri-layered strained channel HOI FinFET using high-K dielectric materials

In strain technology, a modification in the MOSFET by growing heterostructure channel embedded with Si/SiGe/Si layers within the system enhances its working tremendously. Developing a tri-layered HOI n-channel FinFET device at 14 nm gate length having two strained Si layers and one strained SiGe in between along with the use of high-k dielectric materials like HfO2, ZrO2 and Si3N4 as gate oxide decreases the short channel effects like DIBL and enhances the Ion/Ioff, threshold voltage. These parameters have been analysed for better performance by replacing SiO2 as gate oxide with the different high permittivity materials. This paper explores considering equivalent oxide thickness calculations, and is optimised using Silvaco TCAD software. Also HOI device is compared with the results obtained for a FinFET and the results are observed in both cases with the drain current enhancement. Thus, it is perceived that this HOI device with HfO2 gives the utmost outcome.

III-V-on-Si transistor technologies: Performance boosters and integration

In this work, we review progress in III-V transistor technologies. Key approaches for silicon integration are described, with a distinction being made between large area layer transfer and selective growth techniques. We show how the integration approach must be tailored for the intended application to maximize performance, functionality and minimize cost. We also highlight performance boosters such as heterostructure channel stacks, which offer increased carrier mobility towards improved RF and RF-CMOS performance. Recent progress in tunneling field-effect transistors (TFETs) have enabled the TFET architecture as a process module, allowing for dense integration with MOSFETs on the same chip towards an extremely low-power CMOS technology. Finally, we highlight emerging applications for III-V devices at cryogenic temperatures, where there is a rising need for low-power electronics to support the scaling of quantum computers. The unique properties of III-V, their high mobility and band gap engineering make them highly suitable for this application.

Boosted CO desorption behaviors induced by spatial dyadic heterostructure in polymeric carbon nitride for efficient photocatalytic CO2 conversion

In the present contribution, a highly crystalline nano-coral matrix on amorphous polymeric carbon nitride (PCN) nanosheets are structurally crafted and identified as an efficient photocatalyst for photocatalytic CO2 reduction reaction (CRR). The modified PCN presents a unique spatial dyadic heterostructure and favorable directional charge-transfer channel, resulting in improved charge separation for CRR. Notably, DFT calculations suggest that the modified PCN possesses reduced energy barrier for CO2 reduction into CO via facile accessible of COOH intermediate and boosted CO* desorption. The as-prepared functionalized PCN materials possess a remarkable photocatalytic CO2 reduction performance, yielding CO at a rate of 486.7 μmol h−1 g−1 (i.e. 34.0 folds’ higher than pristine PCN) with a high selectivity of 98.4 %. Our strategy of designing spatial dyadic heterostructure in polymeric carbon nitride provides new insights into the architecture engineering of CRR photocatalysts for efficient CO desorption and CO2 conversion.

Optogenetics‐Inspired Neuromorphic Optoelectronic Synaptic Transistors with Optically Modulated Plasticity

AbstractPlasticity modulation, which enables the biological synapses to express rich functionality in a tunable way, is an important technique to comprehensively emulate the synaptic functions for artificial neuromorphic computing systems. However, the reliable modulation on the synaptic plasticity has not been well realized at the device level due to the uncontrollable movement of ions or electrons in solid state electronic materials. Here, inspired by the optogenetics that modifies the synaptic plasticity by optical modulation, the authors propose an optoelectronic synaptic transistor based on MoS2/quantum dots (QDs) mixed‐dimensional heterostructure with optically modulated plasticity. The transmission of neuronal signaling in biological retina has been faithfully emulated under the optical modulation, where the post‐synaptic current is inhibited in the dark and enlarged upon illumination. Moreover, a light‐induced inversion between synaptic potentiation and depression is also demonstrated. Such optical modulation on synaptic plasticity can be attributed to the photo‐gating effect dominating the switching characteristics of the MoS2/QDs heterostructure channel under the stimulation of specific electric signals. The authors’ results provide a feasible strategy to realize functional diversity under the optical modulation for synaptic transistors and promote the development of a neuromorphic optoelectronic hardware platform.

Localization of water surface waves in a heterostructure channel with corrugated sidewalls

This paper describes the fabrication of a water channel heterostructure by combining two types of periodic sidewalls with different duty ratios. This enables the manipulation and localization of water surface waves in bands that are traditionally inaccessible. It is well known that such forbidden bands can be created by the introduction of periodicity, in which the wave propagation is efficiently attenuated when the Bragg condition is satisfied. Through experiments and simulations, we show that an extraordinary transmission arises in the bandgap after two types of periodic channels are combined, even though they have similar forbidden bands. Waves that cannot travel along each channel then begin to propagate along the heterostructure channel. The measured surface amplitude of the water waves indicates that the localization around the interface of two periodic structures is responsible for the extraordinary transmission. The localized energy of water waves shifts according to the distance between the two periodic structures, and the localization and transmission disappear at certain distances. The measurement and analysis of this intriguing phenomenon of water wave manipulation will benefit applications in the collection and utilization of water wave energy.

All 2D Heterostructure Tunnel Field-Effect Transistors: Impact of Band Alignment and Heterointerface Quality.

Van der Waals heterostructures are the ideal material platform for tunnel field-effect transistors (TFETs) because a band-to-band tunneling (BTBT) dominant current is feasible at room temperature (RT) because of ideal, dangling bond-free heterointerfaces. However, achieving subthreshold swing (SS) values lower than 60 mV dec-1 of the Boltzmann limit is still challenging. In this work, we systematically studied the band alignment and heterointerface quality in n-MoS2 channel heterostructure TFETs. By selecting a p+-MoS2 source with a sufficiently high doping level, stable gate modulation to a type III band alignment was achieved regardless of the number of MoS2 channel layers. For the gate stack formation, it was found that the deposition of Al2O3 as the top gate introduces defect states for the generation current under reverse bias, while the integration of a hexagonal boron nitride (h-BN) top gate provides a defect-free, clean interface, resulting in the BTBT dominant current even at RT. All 2D heterostructure TFETs produced by combining the type III n-MoS2/p+-MoS2 heterostructure with the h-BN top-gate insulator resulted in low SS values at RT.

Improved the C–V Curve Shift, Trap State Responsiveness, and Dynamic R ON of SBDs by the Composite 2-D–3-D Channel Heterostructure Under the OFF-State Stress

In this article, the C-V curve shift, trap densities responsiveness,and dynamic R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> of AlGaN/GaN/GaN:C (SH:C) and AlGaN/GaN/graded-AlGaN:Si/GaN:C (DH:Si/C) heterostructure Schottky barrier diodes (SBDs) have been systematically analyzed. Due to additional 3-D electrons in graded-AlGaN:Si layer, the composite 2-D-3-D channel of DH:Si/C has a higher carrier concentration. Reducing the OFF-state electric field strength through AlGaN:Si insert layer, a smaller positive shift of C-V curve is achieved under OFF-state stress. Due to the charge shielding effect of AlGaN:Si insert layer, trapping/detrapping effects in GaN:C buffer under the OFF-state stress are well suppressed. Compared with SH:C heterostructure, the trap density responsiveness of DH:Si/C heterostructure under OFF-state stress is significantly reduced. At the same time, trap density responsiveness of the upper channel is immune to OFF-state electric stress time. In addition, the proposed SBDs show lower ON-resistance with on reverse bias stress and better dynamic performance with on reverse stress time.

Polarization engineering via InAlN/AlGaN heterostructures for demonstration of normally-off AlGaN channel field effect transistors

Normally-off AlGaN channel heterostructure field effect transistors (HFETs) have been proposed and investigated numerically by taking advantage of the polarization engineering perspective in III-nitrides. The utilization of polarization-matched InAlN/AlGaN heterostructures shifted the threshold voltage to approximately 1.1 V for an Al0.3Ga0.7N channel HFET. Compared to the AlGaN/GaN HFEF with a low breakdown voltage, the normally-off InAlN/AlGaN HFETs show substantially enhanced breakdown characteristics. Besides, the two-dimensional electron gas (2DEG) mobility in the InAlN/AlGaN HFETs exhibits much less reduction with the increasing temperature than that in the AlGaN/GaN HFET, according to the calculation of electron mobility dominated by alloy disorder scattering and polar optical phonon scattering. As a result, the temperature dependences of the power figures of merit based on the conduction loss consideration in terms of 2DEG mobility variation and Johnson figure of merit show superior potential for polarization-matched InAlN/AlGaN HFETs in high-power and high-frequency electronics applications particularly operating at elevated temperatures. This work provides a useful way for demonstration of normally-off AlGaN channel HFETs and is also helpful for design of future devices, which can be beneficially exploited from polarized III-nitride heterostructures.

Single‐Crystal Hybrid Perovskite Platelets on Graphene: A Mixed‐Dimensional Van Der Waals Heterostructure with Strong Interface Coupling

AbstractVan der Waals (vdW) heterostructures open up excellent prospects in electronic and optoelectronic applications. In this work, mixed‐dimensional metal‐halide perovskite/graphene heterostructures are prepared through selective growth of CH3NH3PbBr3 platelets on patterned single‐layer graphene using chemical vapor deposition. Preferred growth of single‐crystal CH3NH3PbBr3 platelets on graphene surfaces is achieved, which is accompanied by significant photoluminescence quenching. Raman spectra reveal that perovskite platelets cause p‐type doping in the graphene layer. A significant Fermi level decrease of 272 meV in graphene is estimated, which corresponds to a high doping density of 7.5 × 1012 cm−2. Surface potentials measured by Kelvin probe force microscopy indicate a negatively charged perovskite surface under illumination, which is consistent with the upward band bending deduced from conducting atomic force microscopy measurements. Moreover, a field‐effect phototransistor is fabricated using the perovskite/graphene heterostructure channel, and the increased Dirac voltage under illumination confirms an enhanced p‐type character in graphene. These findings enrich the understanding of strong interface coupling in such mixed‐dimensional vdW heterostructures and pave the way toward novel perovskite‐based optoelectronic devices.

Investigation of nitride lateral Schottky barrier diodes based on InGaN channel heterostructures

In this work, nitride lateral Schottky barrier diodes (SBDs) are manufactured on InGaN channel heterostructures, and the superior performances are investigated in detail. Due to the decent electron confinement of InGaN channel heterostructures, a high current on/off ratio of 107 is achieved for the SBDs. In addition, the turn-on voltage (Von) of lateral InGaN channel SBDs is as low as 0.55 V owing to the employment of a low work function tungsten (W) anode. Particularly, the excellent thermal stability of the InGaN channel SBDs is demonstrated. At 150 °C, the maximum forward anode current (Imax) reaches 63% of the value at room temperature, and the reverse leakage current only degenerates by 3.5 times compared to the room temperature value, which are evidently better than the results of traditional GaN channel SBDs. Moreover, the high linearity of InGaN channel SBDs at both room temperature and elevated temperature is revealed. These results demonstrate the great promise of lateral InGaN channel SBDs in high power and wideband electronics fields in the future.