Abstract
The power consumption and the opto-electric noise of organic photo-detectors are the challenges for large-scale detecting and imaging applications to surpass. This article presents a new device concept of organic heterojunction PIN channel for photo-transistor. The presence of the channel's heterostructure enables rectifying capability and effective control of defect density, which leads to low power consumption (0.12 to 7.5 nW) and low dynamic noise (4.5 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">13</sup> Jones detectivity). Significantly, through adopting the highly efficient Perovskite Quantum Dots as intrinsic sensing core, the device exhibits high responsivity up to 7190 A/W. As we demonstrate a large-scale 10 × 20 imaging array with integrated photo-transistor, the output signals are read-out and rebuilt by I-V converting amplifier with analog-to-digital circuit and numerical computation method to visualize the functionality of the system.
Highlights
Large-area organic photodetector (PD) systems are essential for many industrial applications, such as biological electronics [1] optical/touch sensors [2] and imaging applications [3]
For large-scale detecting array organic PDs are restricted by the power consumption and opto-electric noise
We present approaches to fabricate and integrate the PIN PT based on C60/Perovskite Quantum Dots (QDs)/NiO and their photodetecting circuit system with facile inkjet printing
Summary
Large-area organic photodetector (PD) systems are essential for many industrial applications, such as biological electronics [1] optical/touch sensors [2] and imaging applications [3]. Low-light-intensity PDs benefit greatly from a charge-amplification circuit integrated into each pixel [4]. For large-scale detecting array organic PDs are restricted by the power consumption and opto-electric noise. On account of its unique characteristics, enormous efforts have been made to construct the heterostructures in the PDs [7] for efficient opto-electric conversion, quick photo-response and low dark current. Due to the facile processed, Printed Electronics (PE) [9] is compatible with large-scale integrated detecting circuits. Specific intrinsic semiconductor Quantum Dots based PIN structure photo-detectors exhibit low dark current, high detectivity for the enhanced structure [10]. The output signals of the 10×20 sensors of the array are through noise-measuring, which are output and interpreted into a gray-scale image with the peripheral analog digital acquisition systems
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