Abstract
In this work, high quality AlGaN/GaN double channel heterostructures were grown by metal organic chemical vapor deposition and the coupling correlation between the two channels, as well as the strain state of this multilayer structure are investigated in detail. It was revealed that the stronger coupling correlation affect the 2DEG distribution and leads to the lower channel is similar to the upper channel with the thinner thickness of the upper channel. In addition, the impact of the multilayer strain state on the characteristics of double channel heterostructures was discussed. Moreover, the effects of coupling correlation and strain state on the performance of double channel high electron mobility transistor (HEMT) was shown by 2-D simulation. This work is not only beneficial for the further study of the double (multiple) channel heterostructures and devices, but also instructive to the design and realization of the future atomic hyperfine structures of nitride semiconductors.
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