The bulk acoustic wave (BAW) magnetic sensor, which is based on a thin-film bulk acoustic wave resonator and magnetoelectric coupling, has the technological advantage of passive wireless magnetic detection and can be applied to medical diagnostics and resource exploration to achieve ultra-weak magnetic field detection. However, the enhancement of BAW magnetic sensors' performance is severely limited by the localized magnetization phenomenon and the significant eddy current loss suffered by single-layer magnetic films. In this paper, the effect and internal physical mechanism of inserting different alumina intercalation layers into a magnetic film on the performance of the magnetic film and the BAW sensor were investigated, and the optimal design of the BAW magnetic sensor was achieved. First, single-layer FeGaB films and composite FeGaB/(Al2O3 5 nm/FeGaB)n films (n = 1, 2, 4, 6, and 10) were fabricated to characterize the effect of intercalation on the static and dynamic magnetic properties of the films. When four layers of 5 nm alumina were inserted, the magnetic film was found to have the finest soft magnetic properties. Further micromagnetic simulation and microstructural characterization demonstrated that the alumina intercalation enhances the magnetic film's microstructure, resulting in a complex interlayer interaction. Second, the BAW magnetic sensor's finite element simulation model was developed using COMSOL Multiphysics. The relaxation response mechanism of the magnetic film to an external alternating magnetic field was investigated using micromagnetism, and the energy transfer and coupling between the magnetic film and the piezoelectric layer were further analyzed. The effect of the alumina intercalation on the magnetic sensor's performance, including sensitivity and linearity, was quantified. Eventually, the operating frequency of the BAW magnetic sensor was matched to 2.5 GHz by refining the design conditions of inserting four layers of 5 nm alumina into FeGaB thin films. Within the magnetic field testing range of 50000–60000 A/m, simulation results indicate that the sensitivity can reach 0.0028 Vm/A, and the linearity of the output voltage is better than 3.85%.
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