Bandgap Reference Research Articles

A -89dB PSRR 1.064ppm/°C bandgap voltage reference based on curvature compensation

A -89dB PSRR 1.064ppm/°C bandgap voltage reference based on curvature compensation

Low power consumption and fast response of low dropout regulator design

A low power consumption and fast response low voltage difference linear regulator circuit is designed for on-chip SOC circuit to achieve low power consumption, fast response, and high stability. The internal design mainly includes a low power bandgap reference circuit, a light and heavy load detection circuit, and a transient enhancement circuit. The circuit is designed with 0.35 μm BCD technology, and the layout design is completed. The VIN is from 2.5 V to 5 V, the VOUT from 2.5 V to 3.3 V, and the maximum load is 250 mA. The simulation results show that the static current is 2.6 μA at normal temperature with no load. When the load jumps, the overshoot is 44 mV and the recovery time is 52 μs, meeting the design requirements of low power consumption and fast response.

A 10.5 ppm/°C Modified Sub-1 V Bandgap in 28 nm CMOS Technology with Only Two Operating Points

Reference voltage/current generation is essential to the Analog circuit design. There have been several ways to generate quality reference voltage using bandgap reference (BGR) and there are mainly two types: current mode and voltage mode. The current-mode bandgap reference (CBGR) is widely accepted in industry due to having an output voltage which is below 1 V. However, its drawbacks include a lack of proportional to absolute temperature (PTAT) current availability, a large silicon area, multiple operating points, and a large temperature coefficient (TC). In this paper, various operating points are explained in detail with diagrams. Similar to the conventional voltage mode bandgap reference (VBGR) circuits, modifications of the existing circuits with only two operating points have also been proposed. Moreover, the proposed BGR occupies a much smaller area due to eliminating the complimentary to absolute temperature (CTAT) current-generating resistor. A new self-biased opamp was introduced to operate from a 1.05 V supply, reducing systematic offset and TC of the BGR. The proposed solution has been implemented in 28 nm CMOS TSMC technology, and extraction simulations were performed to prove the robustness of the proposed circuit. The targeted mean BGR output is 500 mV, and across the industrial temperature range (−40 to 125 °C), the simulated TC is approximately 10.5 ppm/°C. The integrated output noise within the observable frequency band is 19.6 µV (rms). A 200-point Monte Carlo simulation displays a histogram with a 2.6 mV accuracy of 1.2% (±3-sigma). The proposed BGR circuit consumes 32.8 µW of power from a 1.05 V supply in a fast process and hot (125 °C) corner. It occupies a silicon area of 81 × 42 µm (including capacitors). This design can aim for use in biomedical and sensor applications.

Sub-μW Auto-Calibration Bandgap Voltage Reference With 1σ Inaccuracy of ± 0.12% Within − 40°C to 120°C

Sub-μW Auto-Calibration Bandgap Voltage Reference With 1σ Inaccuracy of ± 0.12% Within − 40°C to 120°C

3D Position Tracking Using On-Chip Magnetic Sensing in Image-Guided Navigation Bronchoscopy.

This paper presents a compact and low-cost on-chip sensor and readout circuit. The sensor achieves high-resolution 5-degrees-of-freedom (DoF) tracking (x, y, z, yaw, and pitch). With the help of an external wire wound sensor, it can also achieve high-resolution 6-degrees-of-freedom (DoF) tracking (x, y, z, yaw, pitch, and roll angles). The sensor uses low-frequency magnetic fields to detect the position and orientation of instruments, providing a viable alternative to using X-rays in image-guided surgery. To measure the local magnetic field, a highly miniaturised on-chip magnetic sensor capable of sensing the magnetic field has been developed incorporating an on-chip magnetic sensor coil, analog-front end, continuous-time ∆Σ analog-to-digital converter (ADC), LVDS transmitter, bandgap reference, and voltage regulator. The microchip is fabricated using 65 nm CMOS technology and occupies an area of 1.06 mm 2, the smallest reported among similar designs to the best of our knowledge. The 5-DoF system accurately navigates with a precision of 1.1 mm within the volume-of-interest (VOI) of 15 ×15 ×15 cm 3. The 6-DoF system achieves a navigation accuracy of 0.8 mm and an angular error of 1.1 degrees in the same VOI. These results were obtained at a 20 Hz update rate in benchtop characterisation. The prototype sensor demonstrates accurate position tracking in real-life pre-clinical in-vivo settings within the porcine lung of a live swine, achieving a reported worst-case registration accuracy of 5.8 mm.

Explosive Growth of Image Sensors in Smart Government Technology and Economic Scale

CMOS image sensor is a rapidly developing image sensor product in the past decade. Relying on the advantages of process compatibility with standard CMOS process, CMOS image sensor integrates analog photoelectric photosensitive circuit and digital signal processing circuit to become a small and powerful system on chip. This article mainly studies the explosive growth of image sensors in smart government technology and economic scale. The main purpose of this article is to study the technical application of image sensors, reduce the administrative cost of social governance, improve the level of government governance, benefit the public, and realize the requirements of smart government affairs and rapid economic development of the city. This study tested the static performance of the analog-to-digital conversion circuit by inputting a limited number of sampling points, and its integral nonlinearity and differential nonlinearity were both less than 1LSB. The bandgap reference circuit provides a reference level for the entire system. It uses two PNP-type bipolar transistors parasitic in the CMOS process to achieve a temperature and voltage-independent bandgap reference voltage through the feedback of the operational amplifier. It is ideal for use In the case of resistance simulation, its accuracy reaches 16.6ppm. The scanning method of the pixel array uses multi-sampling technology to increase the dynamic range of the sensor by 2N times. The correlated sub-sampling technology eliminates the fixed pattern noise between pixel units. The use of pipelined analog-to-digital converters can achieve good resolution, speed and area compromise.Through the realization and simulation of transistor-level circuits, the performance of each part of the system meets the requirements of design and application.

0.4-V Supply, 12-nW Reverse Bandgap Voltage Reference With Single BJT and Indirect Curvature Compensation

0.4-V Supply, 12-nW Reverse Bandgap Voltage Reference With Single BJT and Indirect Curvature Compensation

Analysis and Design of Ripple-Free Bandgap Reference Circuit With p-n-p Bipolars

Analysis and Design of Ripple-Free Bandgap Reference Circuit With p-n-p Bipolars

A High-Precision Bandgap Reference with Chopper Stabilization and V-Curve Compensation Technique.

The MEMS sensor converts the physical signal of nature into an electrical signal. The output signal of the MEMS sensor is so weak and basically in the low-frequency band that the MEMS sensor interface circuit has a rigorous requirement for the noise/offset and temperature coefficient, especially in the bandgap reference block. However, the traditional amplifier has low-frequency noise and offset voltage, which will decrease the precision of the bandgap reference. In order to satisfy the need of the MEMS sensor interface circuit, a high-precision and low-noise bandgap reference is proposed in this paper. A novel operational amplifier with a chopper-stabilization technique is adopted to reduce offset and low-frequency noise. At the same time, the V-curve compensation circuit is used to realize the second-order curvature compensation. The circuit is implemented under the 0.18 μm standard of the CMOS process. The test result shows that the temperature coefficient of the bandgap is 2.31 ppm/°C in the range of -40-140 °C, while the output voltage noise is only 616 nV/sqrt(Hz)@1 Hz and the power-supply rejection ratio is 73 dB@10 kHz. The linear adjustment rate is 0.33 mV/V for supply voltages of 1.2-1.8 V at room temperature, the power consumption is only 107 μW at 1.8 V power supply voltage, and the chip active area is 0.21 × 0.28 mm2.

Optimization and improvement of voltage mode band-gap reference circuit and current mode band-gap reference circuit based on comparative analysis method

Voltage mode band-gap reference source and current mode band-gap reference source is the basic unit of integrated circuit, which plays an important role in some circuit systems such as low-voltage linear regulator, power control chip and analog-to-digital/analog-to-digital converter. Band-gap reference circuit is divided into voltage mode band-gap reference circuit and current mode band-gap reference circuit, and their basic principles and optimization methods are different. The voltage mode bandgap reference voltage is generated by superimposing voltages with positive and negative temperature coefficients, thereby producing a low-temperature related factor. In contrast, the current mode bandgap reference generates a reference voltage by superimposing currents with positive and negative temperature coefficients, requiring appropriate resistance matching and compensation. This paper analyzes the basic principles of the above two band-gap reference circuits, analyzes the temperature characteristics and mismatch sources of them, compares the research results including the implementation mode, temperature characteristics, application range and optimization scheme of the two, and looks forward to the future development prospect of both types of circuits.

A Sub-1 ppm/°C dual-reference small-area bandgap reference comprising an enhanceable piecewise curvature compensation circuit

This paper presents a low-temperature coefficient (TC) dual-reference CMOS bandgap reference (BGR) for high-performance systems working under a wide temperature range. It consists of a correction approach to eliminate the high-order inaccuracy, in which an enhanceable curvature compensation circuit is adopted to extend the operating temperature range and generate reference voltages with sub-1 ppm/°C TC. In addition, a voltage level shifter (VLS) is used to generate the latter compensated reference voltage but no need for an additional compensation circuit. The proposed BGR designed in a 0.18-µm CMOS process has a simulated TC of 0.75 ppm/°C and 0.28 ppm/°C for the first and second reference outputs, respectively, over a wide temperature range of −50 °C to 130 °C. The proposed BGR occupies a 0.0079-mm2 silicon area. The overheads make the BGR appropriate to provide reference voltages in diverse chips with high-precision systems.

An 1 V Supply, 740 nW, 8.7 ppm/°C Bandgap Voltage Reference With Segmented Curvature Compensation

An 1 V Supply, 740 nW, 8.7 ppm/°C Bandgap Voltage Reference With Segmented Curvature Compensation

Dual‐channel pre‐regulator structure for the bandgaps in high step‐down DC‐DC converters

AbstractHigh step‐down DC‐DC converters require a robust and low power pre‐regulated supply for bandgap reference. This paper proposes a structure that comprised of two current paths to achieve energy efficient pre‐regulation under high and low input voltage conditions. The design eliminated large size resistors for current limiting which is usually required for high input supplies. The presented pre‐regulator structure combined with the bandgap circuit was realized with the TSMC 180‐nm BCD process. The measured results show the proposed structure has a wide input voltage range of 3.5–45 V, a temperature coefficient of 5.63 ppm/°C and typical average current consumption of 1.1 μA.

A piecewise temperature-curvature compensation bandgap with internal chopper stabilized amplifiers

This paper presented a high-accuracy bandgap reference circuit with novel temperature curvature compensation technology and chopper stabilized technology. The proposed bandgap circuit achieves a good temperature coefficient (TC) without the trimming circuit by high-order adaptive curvature compensation. Besides, we applied the chopper stabilized technology to internal amplifiers in bandgap reference, which reduces the offset voltage of the amplifier and improves output voltage precision and TC. The bandgap circuit has been manufactured in a 180 nm BCD process. The core occupies an active chip area of 160 μm × 370μm. The simulated temperature coefficient is 0.755 ppm/◦C with a wide temperature range of −40 °C∼125 °C. The measurement results indicated that the designed bandgap reference has high precision. The measurement temperature coefficient is 10.07 ppm/◦C. The line regulation of bandgap reference is 0.07 %. Besides, the PSRR of the circuit is −65dB@100 Hz. The current consumption of the circuit is 12.6uA.

A high PSR and high-precision current-mode bandgap reference with gm boost self-regulated structure

A high power supply rejection and high-precision current-mode bandgap reference system with a reliable start-up gm boost self-regulated structure is presented in this paper. The gm boost technology and high-precision compensation structure are adopted to improve the power supply rejection and precision of the output reference current, respectively. The proposed reference system has been designed in Semiconductor Manufacturing International Corporation (SMIC) 55 nm CMOS process. The simulation results show that with a supply voltage of 3.3 V, the power supply rejection is −101.3dB@DC, −60.23dB@1MHz and −55.6dB@10MHz, the temperature coefficient of the output reference current of proposed circuit is approximately 3.14 ppm/°C in a temperature range from −40 to 125 °C, the quiescent current consumption is 47.8 μA and the silicon area is 0.0992 mm2.

A [formula omitted]104 dB PSRR and 1.86-ppm/[formula omitted] curvature-compensated bandgap voltage reference with improved voltage-self-regulating technology

A high power supply rejection ratio (PSRR) bandgap voltage reference (BGR) with low temperature coefficient (TC) is proposed. The PSRR is enhanced by an improved voltage-self-regulation (VSR) technology which provides a low-impedance branch and negative feedback loop. Furthermore, a curvature compensation structure is proposed to reduce the TC by utilizing the curvature-corrected current (ICU). The proposed BGR supply voltage range is 2.5–3.6 V and its output voltage is 1.2 V. The results of the simulation using a standard 65 nm CMOS process with 3.3 V thick oxide device demonstrate that the line regulation of the proposed BGR is approximately 0.015 mV/V in the supply voltage range of 3–3.6 V. A TC of 1.86 ppm/∘C is obtained in the temperature range of -40∘C to 125∘C, and PSRR of -104 dB@DC are achieved. The active area of the proposed BGR is 0.063 mm2.

A High-Precision Current-Mode Bandgap Reference With Low-Frequency Noise/Offset Elimination

This brief presents a low-noise, low-offset bandgap reference for the biomedical electronic systems application. In order to reduce the low-frequency noise and increase the accuracy, the low-frequency noise/offset elimination technique based on current-mode bandgap reference (BGR) is proposed. Besides, this BGR utilizes a proportional to absolute temperature (PTAT) resistor feedback technique to minimize the low-frequency noise and offset from the current mirror. The proposed BGR is implemented in a 180 nm deep n-well CMOS process occupying an active area of 0.0725 mm2. The measured results indicate that the BGR outputs 0.6 V voltage and consumes 69 μA current under 1.2 V supply voltage. It can achieve 3.5 μV(rms) noise from 0.1 to 10 Hz and a 0.21% DC accuracy.

Technology Dependency of TID Response for a Custom Bandgap Voltage Reference in 65 nm to 28 nm Bulk CMOS Technologies

Technology Dependency of TID Response for a Custom Bandgap Voltage Reference in 65 nm to 28 nm Bulk CMOS Technologies

Design of a High PSRR Low-pressure Bandgap Reference Source with Curvature Compensation

Based on the NUVOTON 0.35 μm BCD process, a low voltage bandgap reference with an input voltage of 5 V and output voltage of 0.6 V is designed in this paper. The traditional low-voltage bandgap reference output voltage has a large temperature coefficient and poor ability to suppress power supply fluctuations. In this paper, a circuit with high order compensation is proposed to reduce the temperature coefficient of the circuit, and a pre-regulated circuit is used to increase the power supply rejection ratio. The simulation results are at -30 °C∼130 °C. The output voltage of reference voltage is 947.5 μV, the temperature coefficient is 9.58 ppm/°C, and the power suppression ratio is -104.62 dB, which meets the design requirements of the power management chip.

A Reference Voltage Circuit Applied in High Precision Delta-Sigma ADC

A novel reference voltage circuit design which is applied in high-precision Delta-Sigma ADC is implemented. The proposed reference circuit exploits a high-gain class-AB OTA as the error amplifier, which improves the transient response characteristics, ensures loop stability, and does not increase additional power consumption. The design and simulation of the proposed reference voltage circuit are fabricated by SMIC.18 CMOS technology. The simulation results manifest that the temperature coefficient of the bandgap reference is 6.825 ppm/°C in the temperature range from -40°C to 125°C. The transient response of the proposed reference circuit takes about 13 ns to reach the precision demanded by the reference voltage. The Σ-Δ modulator with the designed reference voltage circuit applied has an effective number of bits (ENOB) of 18.1 bits, a signal-to-noise-ratio (SNR) of 111.2 dB, and a signal-to-noise-plus-distortion (SNDR) of 110.9 dB at 1MHz sampling frequency and 625 Hz input signal.