A high PSR and high-precision current-mode bandgap reference with gm boost self-regulated structure

Abstract

A high power supply rejection and high-precision current-mode bandgap reference system with a reliable start-up gm boost self-regulated structure is presented in this paper. The gm boost technology and high-precision compensation structure are adopted to improve the power supply rejection and precision of the output reference current, respectively. The proposed reference system has been designed in Semiconductor Manufacturing International Corporation (SMIC) 55 nm CMOS process. The simulation results show that with a supply voltage of 3.3 V, the power supply rejection is −101.3dB@DC, −60.23dB@1MHz and −55.6dB@10MHz, the temperature coefficient of the output reference current of proposed circuit is approximately 3.14 ppm/°C in a temperature range from −40 to 125 °C, the quiescent current consumption is 47.8 μA and the silicon area is 0.0992 mm2.