Explosive Growth of Image Sensors in Smart Government Technology and Economic Scale

Abstract

CMOS image sensor is a rapidly developing image sensor product in the past decade. Relying on the advantages of process compatibility with standard CMOS process, CMOS image sensor integrates analog photoelectric photosensitive circuit and digital signal processing circuit to become a small and powerful system on chip. This article mainly studies the explosive growth of image sensors in smart government technology and economic scale. The main purpose of this article is to study the technical application of image sensors, reduce the administrative cost of social governance, improve the level of government governance, benefit the public, and realize the requirements of smart government affairs and rapid economic development of the city. This study tested the static performance of the analog-to-digital conversion circuit by inputting a limited number of sampling points, and its integral nonlinearity and differential nonlinearity were both less than 1LSB. The bandgap reference circuit provides a reference level for the entire system. It uses two PNP-type bipolar transistors parasitic in the CMOS process to achieve a temperature and voltage-independent bandgap reference voltage through the feedback of the operational amplifier. It is ideal for use In the case of resistance simulation, its accuracy reaches 16.6ppm. The scanning method of the pixel array uses multi-sampling technology to increase the dynamic range of the sensor by 2N times. The correlated sub-sampling technology eliminates the fixed pattern noise between pixel units. The use of pipelined analog-to-digital converters can achieve good resolution, speed and area compromise.Through the realization and simulation of transistor-level circuits, the performance of each part of the system meets the requirements of design and application.