We present the design and analysis of G-band CMOS Wilkinson power dividers and dual balun for G-band communication and imaging systems. Miniature spiral and U-shaped four-way Wilkinson power dividers, which are based on three two-way Wilkinson power dividers, are designed and implemented. Miniature spiral dual balun, which is equivalent to an upper balun and a lower balun in parallel, is also designed and implemented for comparison. These devices are planar and symmetrical, and their main structure is implemented by the 2.34-µm-thick topmost metal to minimize the resistive loss. This leads to low insertion loss, and small amplitude imbalance (AI) magnitude and phase difference (PD) deviation. For instance, the spiral four-way Wilkinson power divider occupies 0.033 mm2 chip area and achieves S11 of − 11.4 dB, S21 of − 6.271 dB, S31 of − 6.445 dB, S41 of − 6.676 dB, and S51 of − 6.111 dB at 180 GHz, one of the smallest chip areas and lowest insertion losses for four-way power dividers with similar operation frequency. The corresponding AI magnitude and PD deviation are 0.565 dB and 3.2°, respectively. Moreover, the spiral dual balun occupies 0.026 mm2 chip area and achieves S11 of − 10.6 dB, S21 of − 7.549 dB, S31 of − 7.1 dB, S41 of − 7.598 dB, and S51 of − 7.352 dB at 180 GHz. The corresponding AI magnitude and PD deviation are 0.498 dB and 5.7°, respectively. The prominent results of the spiral and U-shaped four-way Wilkinson power dividers, and the spiral dual balun indicate that they are suitable for power division/combination in G-band systems.