Artificial Heterostructures Research Articles

Perspective: Emergent topologies in oxide superlattices

The ability to synthesize high-quality, complex-oxide heterostructures has created a veritable playground in which to explore emergent phenomena and exotic phases which arise from the interplay of spin, charge, orbital, and lattice degrees of freedom. Of particular interest is the creation of artificial heterostructures and superlattices built from two or more materials. Through such approaches, it is possible to observe new phases and phenomena that are not present in the parent materials alone. This is especially true in ferroelectric materials where the appropriate choice of superlattice constituents can lead to structures with complex phase diagrams and rich physics. In this article, we review and explore future directions in such ferroic superlattices wherein recent studies have revealed complex emergent polarization topologies, novel states of matter, and intriguing properties that arise from our ability to manipulate materials with epitaxial strain, interfacial coupling and interactions, size effects, and more. We focus our attention on recent work in (PbTiO3)n/(SrTiO3)n superlattices wherein exotic polar-vortex structures have been observed. We review the history of these observations and highlights of recent studies and conclude with an overview and prospectus of how the field may evolve in the coming years.

In-situ angle-resolved photoemission spectroscopy of copper-oxide thin films synthesized by molecular beam epitaxy

Angle-resolved photoemission spectroscopy (ARPES) is the key momentum-resolved technique for direct probing of the electronic structure of a material. However, since it is highly surface-sensitive, it has been applied to a relatively small set of complex oxides that can be easily cleaved in ultra-high vacuum. Here we describe a new multi-module system at Brookhaven National Laboratory (BNL) in which an oxide molecular beam epitaxy (OMBE) is interconnected with an ARPES and a spectroscopic-imaging scanning tunneling microscopy (SI-STM) module. This new capability largely expands the range of complex-oxide materials and artificial heterostructures accessible to these two most powerful and complementary techniques for studies of electronic structure of materials. We also present the first experimental results obtained using this system — the ARPES studies of electronic band structure of a La2-xSrxCuO4 (LSCO) thin film grown by OMBE.

Influence of the magnetic state on the voltage-controlled magnetoelectric effect in a multiferroic artificial heterostructure YIG/PMN-PZT

The artificial multiferroic heterostructure used in this work is composed by an yttrium iron garnet (YIG) film deposited by radio frequency (rf) magnetron sputtering on a metalized PMN-PZT ceramic. We demonstrate, thanks to the well-known converse magnetoelectric (CME) coupling, the control of the magnetic state of the YIG film by means of a low electric field applied to the PMN-PZT ceramic. In particular, it is shown that the variations of the magnetization induced by the strain are functions of the magnetic sate of the film. It is shown that the maximum amplitude variation is observed at the coercive magnetic field (Hc), whereas when H increases, the strain effect has a limited impact on the film magnetization. A second effect has also been remarked on the magnetization of the YIG film but only after the first strain induced cycle has been applied. These variations, observed only under low applied magnetic fields, can be attributed to the re-orientation of some magnetic moments which are easy to switch under low magnetic fields. We find that after poling the YIG film, i.e., applying a magnetic field on it, the initial state is restored. The CME coupling coefficient is determined for different magnetic states of the YIG film, and the maximum value 11 × 10−8 s/m is obtained at H = Hc and E = Ec (the coercive field of the PMN-PZT ceramic). The relative susceptibility tunability available for the heterostructure proposed is 16.8% for an electric field applied between 0 and −4 kV/cm.

Edge currents as a probe of the strongly spin-polarized topological noncentrosymmetric superconductors

Recently the influence of antisymmetric spin-orbit coupling has been studied in novel topological superconductors such as half-Heuslers and artificial hetero-structures. We investigate the effect of Rashba and/or Dresselhaus spin-orbit couplings on the band structure and topological properties of a two-dimensional noncentrosymetric superconductor. For this goal, the topological helical edge modes are analyzed for different spin-orbit couplings as well as for several superconducting pairing symmetries. To explore the transport properties, we examine the response of the spin-polarized edge states to an exchange field in a superconductor-ferromagnet heterostructure. The broken chiral symmetry causes the uni-directional currents at opposite edges.

(Invited) Scalable, Layer-Controlled Synthesis of 2D Semiconductors

The rapid cadence of MOSFET scaling is stimulating the development of new technologies and accelerating the introduction of new semiconducting materials as silicon alternative. In this context, transition metal dichalcogenides (TMDs) with a unique layered structure have attracted tremendous interest in recent years mainly motivated by the characteristic 2D nature together with distinctive and tunable optoelectronic properties which make them appealing for a wide variety of applications. Their ultra-thin body nature, in particular, is expected to provide superior immunity to short channel effects therefore extending the potential to scale transistors down to the few-nanometer-scale. [1-4] Another key feature of 2D materials is the absence of surface dangling bonds. The latter property has the potential to eliminate lattice mismatch constraints thus paving the way for hybrid integration of TMDs into artificial heterostructures with sharp interfaces and designed band alignment. As researchers explore the physics and applications of layered semiconductors, it is now becoming important to find a wafer-scale path towards technology implementation and integration of these novel materials. In this context, it has been recently demonstrated that metal-organic chemical vapor deposition (MOCVD) can be used to manufacture large area 2D semiconductor materials. [5]. The goal of this work is to unravel some of the fundamental aspects of film formation and provide a pathway towards a layer-controlled, wafer-scale synthesis of TMD films. More in details, we will provide insights on the different growth mechanisms of TMD films on amorphous and crystalline templates. In this framework, we will discuss the key aspects to enable and control a real van der Waals epitaxy of TMD films. The target, of course, is to achieve unidirectional and high quality monocrystalline domains by forcing an epitaxial relationship between the 2D film and the underlying substrate. In-depth structural AFM, XPS, TEM analyses along with Raman, Photoluminescence and lifetime measurements are used in our study. In order to establish a direct link between electrical performance and material quality, FET devices using our layers are also fabricated. A careful link between the structural analyses and the electrical results is made in order to asses material quality and offer a step further on the understanding of 2D TMDs for nanoelectronics. B. Radisavljevic et al. Nature Nanotechnol., 6, 147 (2011).R. Ganatra and Q. Zhang, ACS Nano, 8, 4074 (2014).A. Nourbakhsh et al. Nano Lett., 16 7798 (2016).A. Nourbakhsh et al. Nanoscale, 18, 6122 (2017).K. Kang et al. Nature volume 520, 656 (2015)

Electric and magnetic properties of ferromagnetic/piezoelectric bilayered composite

One of the most promising ways for the realization of multi-functional materials is the integration of oxides with different properties in artificial heterostructures. In this paper, a novel piezoelectric–ferromagnetic heterostructure consisting of 0.92Na0.5Bi0.5TiO3–0.08BaTiO3 (abbreviated as BNT–BT0.08) and CoFe2O4 layers is fabricated on Si–Pt substrate, by sol–gel method coupled with spin-coating technique. The composite thin film shows only perovskite Bi0.5Na0.5TiO3-like rhombohedral phase and CoFe2O4 cubic phase. The thickness of CoFe2O4 and BNT–BT0.08 layers is ~ 280 and ~ 400 nm, respectively. BNT–BT0.08/CoFe2O4 heterostructure thin film shows a saturation magnetization of 0.11 emu/g at 5 K and 0.07 emu/g at 295 K, dielectric constant of 235 at 1 kHz and tunability of 70% at 1 kHz and an electric field E = 110 kV/cm. The results reveal that the investigated hybrid piezoelectric/ferromagnetic structure shows piezoelectric behavior, good ferroelectric and ferromagnetic properties. This bilayer composite can be used in miniature low-frequency magnetic sensor and piezoelectric sensor for biomedical domain.

Atomic Level Engineering of Structural and Functional Properties of Transition Metal Oxides

Metal-oxygen bonds are responsible for a broad spectrum of functional properties of transition-metal oxides, and engineering the bonds is a key for exploring their properties. Artificial oxide heterostructures with chemically abrupt interfaces have provided a platform for engineering bonding geometries that could lead to emergent phenomena not seen in bulk oxides. In this paper, we demonstrate that interfacially engineering oxygen displacement is a good route for exploring structural and functional properties of oxides. Our high-resolution annular bright-field scanning transmission electron microscopy observations revealed that interfacial oxygen displacement determines metal-oxygen bond angles in entire heterostructures and the magnitude of the displacements can be adjusted by controlling propagations of the oxygen octahedral rotations across the heterointerface. We also show that by heterostructuring an itinerant ferromagnet SrRuO3 with Ca0.5Sr0.5TiO3 (0–4 monolayers thick) grown on a GdScO3 substrate, structural phase and magnetic anisotropy of SrRuO3 can be controlled through the interfacial engineering of its oxygen displacement.

Imposing long-range ferromagnetic order in rare-earth-doped magnetic topological-insulator heterostructures

The combination of topological properties and magnetic order can lead to new quantum states and exotic physical phenomena, such as the quantum anomalous Hall (QAH) effect. The size of the magnetic gap in the topological surface states, key for the robust observation of the QAH state, scales with the magnetic moment of the doped three-dimensional topological insulator (TI). The pioneering transition-metal doped $({\mathrm{Sb},\mathrm{Bi})}_{2}({\mathrm{Se},\mathrm{Te})}_{3}$ thin films only allow for the observation of the QAH effect up to some 100 mK, despite the much higher magnetic ordering temperatures. On the other hand, high magnetic moment materials, such as rare-earth-doped $({\mathrm{Sb},\mathrm{Bi})}_{2}({\mathrm{Se},\mathrm{Te})}_{3}$ thin films, show large moments but no long-range magnetic order. Proximity coupling and interfacial effects, multiplied in artificial heterostructures, allow for the engineering of the electronic and magnetic properties. Here, we show the successful growth of high-quality Dy:${\mathrm{Bi}}_{2}{\mathrm{Te}}_{3}$/Cr:${\mathrm{Sb}}_{2}{\mathrm{Te}}_{3}$ thin film heterostructures. Using x-ray magnetic spectroscopy we demonstrate that high transition temperature Cr:${\mathrm{Sb}}_{2}{\mathrm{Te}}_{3}$ can introduce long-range magnetic order in high-moment Dy:${\mathrm{Bi}}_{2}{\mathrm{Te}}_{3}$---up to a temperature of 17 K---in excellent agreement with first-principles calculations, which reveal the origin of the long-range magnetic order in a strong antiferromagnetic coupling between Dy and Cr magnetic moments at the interface extending over several layers. Engineered magnetic TI heterostructures may be an ideal materials platform for observing the QAH effect at liquid He temperatures and above.

(Invited) Layer-Controlled, Wafer-Scale Fabrication of 2D Semiconductor Materials

The rapid cadence of MOSFET scaling is stimulating the development of new technologies and accelerating the introduction of new semiconducting materials as silicon alternative. In this context, transition metal dichalcogenides (TMDs) with a unique layered structure have attracted tremendous interest in recent years mainly motivated by the characteristic 2D nature together with distinctive and tunable optoelectronic properties which make them appealing for a wide variety of applications. Their ultra-thin body nature, in particular, is expected to provide superior immunity to short channel effects therefore extending the potential to scale transistors down to the few-nanometer-scale. [1-4] Another key feature of 2D materials is the absence of surface dangling bonds. The latter property has the potential to eliminate lattice mismatch constraints thus paving the way for hybrid integration of TMDs into artificial heterostructures with sharp interfaces and designed band alignment. These ingredients, as recently demonstrated, make TMDs ideal building blocks for the fabrication of tunnel field effect transistors with very steep sub-threshold slope which is mandatory for low voltage device operation. [5] Based on these premises, there are some practical issues that need to tackled in order to enable a TMD-based technology. Given their 2D nature, the electronic properties of TMDs critically depend on the physico-chemical characteristics of the interfaces. Therefore, interface/surface engineering represents a logical route to control the electrical performance of TMD-based devices. Surface quality control is mainly a material growth-related issue. From that standpoint, the development of scalable synthesis techniques is obviously a fundamental step towards the development of a manufacturable technology. However, another important step still needs to be achieved: the ability to precisely control the number of layers and surface uniformity at the nano-to micro-length scale over the entire wafer surface to obtain TMD films with atomically flat, self-passivated surfaces. This challenge is further complicated by the fact that powder vaporization techniques and CVD processes used to grow TMD films do not exhibit a self-limiting character. Because of that, local thickness fluctuations and layer discontinuities are commonly observed in synthetic TMD films. In this work, we will discuss fundamental aspects of film formation and provide a pathway towards layer-controlled, wafer-scale synthesis of TMD films. The high temperatures involved in the synthesis process as well as the use of growth templates require the development of a reliable wafer-scale transfer technology. Such a heterogeneous integration, on the one hand, is useful to overcome the incompatibility of the growth process with processing requirements for the BEOL interconnect structures. On the other hand, it reduces the level of control over the interface between the 2D layer and the dielectric substrate. It is not surprising that electronic transport in transferred TMD films is strongly affected by hydrocarbon residues, non-homogeneities (e.g. uncontrolled strain and contaminated regions), dipole formation, and charge transfer effects. Monitoring environmental effects in ultra-thin TMD films and minimizing the impact of layer transfer on the electrostatic potential distribution across the interface is of utmost importance. A wafer-scale transfer process and related experimental challenges and opportunities will be also presented. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, Nature Nanotechnol., 6, 147 (2011).R. Ganatra and Q. Zhang, ACS Nano, 8, 4074 (2014).A. Nourbakhsh, A. Zubair, R. N. Sajjad, A. Tavakkoli K. G., W. Chen, S. Fang, X. Ling, J. Kong, M. S. Dresselhaus, E. Kaxiras, K. K. Berggren, D. Antoniadis, and T. Palacios, Nano Lett., 16 7798 (2016).A. Nourbakhsh, A. Zubair, S. Joglekar, M. Dresselhaus, and T. Palacios, Nanoscale, 18, 6122 (2017).D. Sarkar, X. Xie, W. Liu, W. Cao, J. Kang, Y. Gong, S. Kraemer, P. M. Ajayan and K. Banerjee, Nature, 526, 91 (2015).

Tuning the interfacial charge, orbital, and spin polarization properties in La0.67Sr0.33MnO3/La1−xSrxMnO3 bilayers

The possibility of controlling the interfacial properties of artificial oxide heterostructures is still attracting researchers in the field of materials engineering. Here, we used surface sensitive techniques and high-resolution transmission electron microscopy to investigate the evolution of the surface spin-polarization and lattice strains across the interfaces between La0.66Sr0.33MnO3 thin films and low-doped manganites as capping layers. We have been able to fine tune the interfacial spin-polarization by changing the capping layer thickness and composition. The spin-polarization was found to be the highest at a critical capping thickness that depends on the Sr doping. We explain the non-trivial magnetic profile by the combined effect of two mechanisms: On the one hand, the extra carriers supplied by the low-doped manganites that tend to compensate the overdoped interface, favouring locally a ferromagnetic double-exchange coupling. On the other hand, the evolution from a tensile-strained structure of the inner layers to a compressed structure at the surface that changes gradually the orbital occupation and hybridization of the 3d-Mn orbitals, being detrimental for the spin polarization. The finding of an intrinsic spin-polarization at the A-site cation observed in x-ray magnetic circular dichroism (XMCD) measurements also reveals the existence of a complex magnetic configuration at the interface, different from the magnetic phases observed at the inner layers.

Observation of Superconductivity in the LaNiO3/La0.7Sr0.3MnO3 Superlattice.

In the pursuit of high-temperature superconductivity like that in cuprates, artificial heterostructures or interfaces have attracted tremendous interest. It has been a long-sought goal to find similar unconventional superconductivity in nickelates. However, as far as we know, this has not yet been experimentally realized. To approach this objective, we synthesized a prototypical superlattice that consists of ultrathin LaNiO3 and La0.7Sr0.3MnO3 layers. Both zero resistance and the Meissner effect are observed using resistive and magnetic measurements of the superlattice. These are experimental indicators for superconductivity in new superconductors. X-ray linear dichroism causes the NiO2 planes to develop electron-occupied x2-y2 orbital order similar to that of cuprate-based superconductors. Our findings demonstrate that artificial interface engineering is suitable for investigating novel physical phenomena, such as superconductivity.

Synthesis of In-Plane Artificial Lattices of Monolayer Multijunctions.

Recently, monolayers of van der Waals materials, including transition metal dichalcogenides (TMDs), are considered ideal building blocks for constructing 2D artificial lattices and heterostructures. Heterostructures with multijunctions of more than two monolayer TMDs are intriguing for exploring new physics and materials properties. Obtaining in-plane heterojunctions of monolayer TMDs with atomically sharp interfaces is very significant for fundamental research and applications. Currently, multistep synthesis for more than two monolayer TMDs remains a challenge because decomposition or compositional alloying is thermodynamically favored at the high growth temperature. Here, a multistep chemical vapor deposition (CVD) synthesis of the in-plane multijunctions of monolayer TMDs is presented. A low growth temperature synthesis is developed to avoid compositional fluctuations of as-grown TMDs, defects formations, and interfacial alloying for high heterointerface quality and thermal stability of monolayer TMDs. With optimized parameters, atomically sharp interfaces are successfully achieved in the synthesis of in-plane artificial lattices of the WS2 /WSe2 /MoS2 at reduced growth temperatures. Growth behaviors as well as the heterointerface quality are carefully studied in varying growth parameters. Highly oriented strain patterns are found in the second harmonic generation imaging of the TMD multijunctions, suggesting that the in-plane heteroepitaxial growth may induce distortion for unique material symmetry.

Synthesis and optoelectronic applications of graphene/transition metal dichalcogenides flat-pack assembly

Being a representative candidate from the two-dimensional (2D) materials family, graphene has been one of the most intensively researched candidates because of its ultrahigh carrier mobility, quantum Hall effects, excellent mechanical property and high optical transmittance. Unfortunately, the lack of a band gap makes graphene a poor fit for digital electronics, where the current on/off ratio is critical. Huge efforts have been advocated to discover new 2D layered materials with wonderful properties, which complements the needs of 2D electronics. Appropriately designed graphene based hybrid structure could perform better than its counterpart alone. The graphene hybrid structure soon become one of the most exciting frontiers in advanced 2D materials, and many efforts have been made to create artificial heterostructures by assembling of graphene with various layered materials. In this review, we present the recent development in synthesis and applications of graphene based 2D heterostructures. Although 2D transition metal dichalcogenide semiconductors have been demonstrated as strong candidates for next-generation electronics and optoelectronics, by combining advantages of various properties of 2D materials together with graphene, it is highly possible to build entire digital circuits using atomically thin components, and create many novel devices that can be utilized in different areas.

Magnetic manipulation of topological states in p-wave superconductors

Substantial experimental investigation has provided evidence for spin-triplet pairing in diverse classes of materials and in a variety of artificial heterostructures. One of the fundamental challenges in this framework is how to manipulate the topological behavior of p-wave superconductors (PSC). In this work we investigate the magnetic field response of one-dimensional (1d) PSCs and we focus on the relation between the structure of the Cooper pair spin-configuration and the occurrence of topological phases with an enhanced number N of Majorana fermions per edge. The topological phase diagram, consisting of phases harboring Majorana modes, becomes significantly modified when one tunes the strength of the applied field, the direction of the d-vector and allows for long range hopping amplitudes in the 1d PSC. We find transitions between phases with different number N of Majorana fermions per edge and we show how they can be both induced by a variation of the hopping strength and a spin rotation of d.

Site-selective spectroscopy with depth resolution using resonant x-ray reflectometry

Combining dissimilar transition metal oxides (TMOs) into artificial heterostructures enables to create electronic interface systems with new electronic properties that do not exist in bulk. A detailed understanding of how such interfaces can be used to tailor physical properties requires characterization techniques capable to yield interface sensitive spectroscopic information with monolayer resolution. In this regard resonant x-ray reflectivity (RXR) provides a unique experimental tool to achieve exactly this. It yields the element specific electronic depth profiles in a non-destructive manner. Here, using a YBa2Cu3O7−δ (YBCO) thin film, we demonstrate that RXR is further capable to deliver site selectivity. By applying a new analysis scheme to RXR, which takes the atomic structure of the material into account, together with information of the local charge anisotropy of the resonant ions, we obtained spectroscopic information from the different Cu sites (e.g., chain and plane) throughout the film profile. While most of the film behaves bulk-like, we observe that the Cu-chains at the surface show characteristics of electron doping, whereas the Cu-planes closest to the surface exhibit an orbital reconstruction similar to that observed at La1−xCaxMnO3/YBCO interfaces.

Magnetic vortex nucleation/annihilation in artificial-ferrimagnet microdisks

The topological nature of the magnetic-vortex state gives rise to peculiar magnetization reversal observed in magnetic microdisks. Interestingly, magnetostatic and exchange, energies which, drive this reversal can be effectively controlled in artificial ferrimagnet heterostructures composed of rare-earth and transition metals. [Py(t)/Gd(t)]25 (t = 1 or 2 nm) superlattices demonstrate a pronounced change of the magnetization and exchange stiffness in a 10–300 K temperature range as well as very small magnetic anisotropy. Due to these properties, the magnetization of cylindrical microdisks composed of these artificial ferrimagnets can be transformed from the vortex to uniformly magnetized states in a permanent magnetic field by changing the temperature. We explored the behavior of magnetization in 1.5-μm [Py(t)/Gd(t)]25 (t = 1 or 2 nm) disks at different temperatures and magnetic fields and observed that due to the energy barrier separating vortex and uniformly magnetized states, the vortex nucleation and annihilation occur at different temperatures. This causes the temperature dependences of the magnetization in these Py/Gd disks to demonstrate a unique hysteretic behavior in a narrow temperature range. It was discovered that for the [Py(2 nm)/Gd(2 nm)]25 microdisks, the vortex can be metastable within a certain temperature range.

Electric field modulated conduction mechanism in Al/BaTiO3/La0.67Sr0.33MnO3 heterostructures

Mediating a metastable state is a promising way to achieve a giant modulation of physical properties in artificial heterostructures. A metastable state La0.67Sr0.33MnO3 (LSMO) layer suffering tensile strain was grown on MgO substrates. Incorporating with the ferroelectric BaTiO3 (BTO) layer, an accumulation or depletion state controlled by electric fields can be formed at the BTO/LSMO interface, which drives a switching of the conduction mechanism between space charge limited conduction and Poole-Frenkel emission, corresponding to the low and high resistance states. Our results lighten an effective way for electric-field modulated resistance states in multiferroic magnetoelectric devices.

Planar p–n Junction Based on a TMDs/Boron Nitride Heterostructure

Transition metal dichalcogenides (TMDs) are attracting growing interest for their prospective application in electronic and optical devices. As a leading material in researches of two‐dimensional (2D) electronics, although band structure is layer‐dependent, the TMDs show ambipolar properties. While optically excited light emission has been widely investigated, study on electrically generated emission is still limited. Taking the advantage of its ambipolarity and presence of direct band‐gap in monolayer, we developed an electrically driven light emitting device based on stacked 2D flakes to obtain sharp planar p–n junction in monolayer. Specifically, we have fabricated atomic‐layer TMDs/boron nitride (BN) artificial heterostructures using stacked h‐BN thin flake as a mask to partially cover the TMDs transistor channel allowing high‐density hole accumulation (p‐region) via localized exposure to gate‐controlled accumulation of anions. Transport through the junction shows typical diode‐like rectification current with accompanying strong and sharp light emission from the crystal edge of BN mask for the monolayer case.

Significant photoluminescence quenching and charge transfer in the MoS2/Bi2Te3 heterostructure

Two-dimensional (2D) van der Waals (vdW) heterostructures have been proven as a predominant platform to investigate the electronic and optoelectronic properties in 2D heterostructures theoretically and experimentally. Here, we have fabricated and characterized artificial vdW heterostructures by stacking 2D MoS2 nanosheets on the Bi2Te3 film which is a representative Z2 topological insulator. We have systematically studied the photoluminescence (PL) properties of the MoS2/Bi2Te3 heterostructure and compared them with the results of MoS2 nanosheets on SiO2/Si. We demonstrated that MoS2 shows a significant PL quenching in the MoS2/Bi2Te3 heterostructure. Combined with density-function theory (DFT) calculations, we conclude that the PL quenching is a result of the efficient separation of photo-excited electrons and holes induced by the build-in interfacial electric field and charge transfer between different layers in the MoS2/Bi2Te3 heterostructure.

Long-range Stripe Nanodomains in Epitaxial (110) BiFeO3 Thin Films on (100) NdGaO3 Substrate

Here, we report the observation of ferroelectric and ferroelastic nanodomains in (110)-oriented BiFeO3 (BFO) thin films epitaxially grown on low symmetric (100) NdGaO3 (NGO) substrate. We observed long range ordering of ferroelectric 109° stripe nanodomains separated by periodic vertical domain walls in as-grown 130 nm thick BFO films. The effect of La0.67Sr0.33CoO3 (LSCO) conducting interlayer on domain configurations in BFO/NGO film was also observed with relatively short range-ordering of stripe domains due to the modified electrostatic boundary conditions in BFO/LSCO/NGO film. Additional studies on B-site doping of Nb ions in BFO films showed change in the domain structures due to doping induced change in lattice anisotropy while maintaining the stripe domain morphology with 109° domain wall. This long-range array of ferroelectric and ferroelastic domains can be useful for optoelectronic devices and ferroelastic templates for strain coupled artificial magnetoelectric heterostructures.