Abstract
Two-dimensional (2D) van der Waals (vdW) heterostructures have been proven as a predominant platform to investigate the electronic and optoelectronic properties in 2D heterostructures theoretically and experimentally. Here, we have fabricated and characterized artificial vdW heterostructures by stacking 2D MoS2 nanosheets on the Bi2Te3 film which is a representative Z2 topological insulator. We have systematically studied the photoluminescence (PL) properties of the MoS2/Bi2Te3 heterostructure and compared them with the results of MoS2 nanosheets on SiO2/Si. We demonstrated that MoS2 shows a significant PL quenching in the MoS2/Bi2Te3 heterostructure. Combined with density-function theory (DFT) calculations, we conclude that the PL quenching is a result of the efficient separation of photo-excited electrons and holes induced by the build-in interfacial electric field and charge transfer between different layers in the MoS2/Bi2Te3 heterostructure.
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