Applications In Optoelectronic Devices Research Articles

In situ Blending For Co-Deposition of Electron Transport and Perovskite Layers Enables Over 24% Efficiency Stable Inverted Solar Cells.

Simplifying the manufacturing processes of multilayered high-performance perovskite solar cells (PSCs) is yet of vital importance for their cost-effective production. Herein, an in situ blending strategy is presented for co-deposition of electron transport layer (ETL) and perovskite absorber by incorporating (3-(7-butyl-1,3,6,8-tetraoxo-3,6,7,8-tetrahydrobenzo- [lmn][3,8]phenanthrolin-2(1H)-yl)propyl)phosphonic acid (NDP) into the perovskite precursor solutions. The phosphonic acid-like anchoring group coupled with its large molecular size drives the migration of NDP toward indium tin oxide (ITO) surface to form a distinct ETL during perovskite film forming. This strategy circumvents the critical wetting issue and simultaneously improves the interfacial charge collection efficiencies. Consequently, n-i-p PSCs based on in situ blended NDP achieve a champion power conversion efficiency (PCE) of 24.01%, which is one of the highest values for PSCs using organic ETLs. This performance is notably higher than that of ETL-free (21.19%) and independently spin-coated (21.42%) counterparts. More encouragingly, the in situ blending strategy dramatically enhances the device stability under harsh conditions by retaining over 90% of initial efficiencies after 250h in 100°C or 65% humidity storage. Moreover, this strategy is universally adaptable to various perovskite compositions, device architectures, and electron transport materials (ETMs), showing great potential for applications in diverse optoelectronic devices.

Dual-quartet phosphorescent emission in the open-shell M1Ag13 (M = Pt, Pd) nanoclusters

Dual emission (DE) in nanoclusters (NCs) is considerably significant in the research and application of ratiometric sensing, bioimaging, and novel optoelectronic devices. Exploring the DE mechanism in open-shell NCs with doublet or quartet emissions remains challenging because synthesizing open-shell NCs is difficult due to their inherent instability. Here, we synthesize two dual-emissive M1Ag13(PFBT)6(TPP)7 (M = Pt, Pd; PFBT = pentafluorobenzenethiol; TPP = triphenylphosphine) NCs with a 7-electron open-shell configuration to reveal the DE mechanism. Both NCs comprise a crown-like M1Ag11 kernel with Pt or Pd in the center surrounded by five PPh3 ligands and two Ag(SR)3(PPh3) motifs. The combined experimental and theoretical studies revealed the origin of DE in Pt1Ag13 and Pd1Ag13. Specifically, the high-energy visible emission and the low-energy near-infrared emission arise from two distinct quartet excited states: the core-shell charge transfer and core-based states, respectively. Moreover, PFBT ligands are found to play an important role in the existence of DE, as its low-lying π* levels result in energetically accessible core-shell transitions. This novel report on the dual-quartet phosphorescent emission in NCs with an open-shell electronic configuration advances insights into the origin of dual-emissive NCs and promotes their potential application in magnetoluminescence and novel optoelectronic devices.

First principles insight into the study of the structural, stability, and optoelectronic properties of alkali-based single halide perovskite ZSnCl3 (Z = Na/K) materials for photovoltaic applications.

Metal halide perovskites are crystalline materials with a sharp increase in popularity and rapidly becoming a major contender for optoelectronic device applications. In this work, we provide the optoelectronic features of a possible novel candidate, ZSnCl3 (Z = Na/K) Sn-based on a detailed numerical simulation. The output of the current computations is compared to the results that are currently available, and a respectable agreement is noted. The studied compounds were cubic in nature and structurally stabe. The mechanical properties reflectthe mechanical stability and ductility of the proposed materials. The Sn-based single perovskite compounds proposed in this study are mechanically stable and ductile. The narrow direct band gap for NaSnCl3 and KSnCl3 are 1.36 eV and 1.47 eV, respectively, using the HSE06 hybrid function with the Boltztrp2 integrated in Quantum ESPRESSO (QE) software. The effective use of these compounds in perovskite solar cells and other optoelectronic applications was confirmed by optical absorption spectral measurements conducted in the photon energy range of 0-20 eV.

Saturable absorption properties of mixed lead-tin halide perovskites and their application in near-infrared ultrafast lasers

Abstract Mixed lead-tin halide perovskites, as highly sensitive materials in the near-infrared region, hold significant potential for optoelectronic device applications. Here, mixed lead-tin halide perovskite saturable absorbers (SAs) have been developed by coupling with the side-polished surfaces of the single-mode fibers and excellent saturable absorption effects of the mixed lead-tin halide perovskite SAs have been demonstrated in the near-infrared region. By constructing the in-gap site assisted carrier transfer mode, the saturation absorption process of the mixed lead-tin halide perovskite SAs can be well explained, in which defects as in-gap sites can help the photon-generated carriers transfer into the conduction band and promote the Pauli-blocking-induced absorption bleaching in the SA. Moreover, ytterbium-doped fiber lasers based on perovskite SAs have been fabricated, and mode-locked operations at 1040 nm are achieved using the mixed lead-tin halide perovskite SA, generating ultra-short pulses with a pulse width of 683 fs, 3dB bandwidth of 4.88 nm, signal-to-noise ratio exceeding 49.74 dB, and a repetition rate of 3.74 MHz. Our findings demonstrate that the mixed lead-tin halide perovskite SAs have excellent optical modulation capability and promising applications in the field of ultrafast photonics.

Dichloro-tin (IV) hexadeca-fluoro-phthalocyanine (F16PcSnCl2) thin film on porous silicon layers by ultrasonic spray pyrolysis, for possible application in optoelectronics devices

Phthalocyanines represent a significant class of organic semiconductors that have garnered attention for their potential applications in conducting polymers and organic electronics. The unique structural characteristics of phthalocyanines, coupled with the intriguing chemical behavior and variations in bandgap associated with different substitution sites, offer exciting prospects for designing novel application devices. In this study, we have successfully fabricated a heterostructure incorporating dichloro tin (IV) hexa deca fluoro phthalocyanine (F16PcSnCl2) on both porous silicon (PS) and crystalline silicon (c-Si). The PS substrate was prepared using metal-assisted chemical etching. To explore the optoelectronic applications, we thoroughly characterized the optical, electrical, and morphological properties of the heterostructure. F16PcSnCl2 exhibits the lowest reflectance within the visible light spectrum, making it highly advantageous for photosensitive applications that necessitate efficient light absorption, diffusion, or scattering. The morphological analysis of the F16PcSnCl2 film reveals the presence of nanosphere-type structures uniformly distributed on both PS and c-Si substrates. The absorbance spectrum exhibits three distinct bands, which serve as typical indicators of the F16PcSnCl2 complex. Several hybrid heterostructures were fabricated for electrical characterization, displaying rectifying ohmic behavior and demonstrating a photocurrent effect in the I-V curves. Notably, when the heterostructures were polarized at 1 V, a pronounced response to pulses of white light was observed in the current–time curves. Overall, the integration of organic and inorganic materials in heterostructures holds great promise for innovative applications in optoelectronics.

Surface Engineering of Two-Dimensional Black Phosphorus for Advanced Nanophotonics.

ConspectusEverything in the world has two sides. We should correctly understand its two sides to pursue the positive side and get rid of the negative side. Recently, two-dimensional (2D) black phosphorus (BP) has received a tremendous amount of attention and has been applied for broad applications in optoelectronics, transistors, logic devices, and biomedicines due to its intrinsic properties, e.g., thickness-dependent bandgap, high mobility, highly anisotropic charge transport, and excellent biodegradability and biocompatibility. On one hand, rapid degradation of 2D BP under ambient conditions becomes a vital bottleneck that largely hampers its practical applications in optical and optoelectronic devices and photocatalysis. On the other hand, just because of its ambient instability, 2D BP as a novel kind of nanomedicine in a cancer drug delivery system can not only satisfy effective cancer therapy but also enable its safe biodegradation in vivo. Until now, a variety of surface functionality types and approaches have been employed to rationally modify 2D BP to meet the growing requirements of advanced nanophotonics.In this Account, we describe our research on surface engineering of 2D BP in two opposite ways: (i) stabilizing 2D BP by various approaches for advanced nanophotonic devices with both remarkable photoresponse behavior and environmentally structural stability and (ii) making full use of biodegradation, biocompatibility, and biological activity (e.g., photothermal therapy, photodynamic therapy, and bioimaging) of 2D BP for the construction of high-performance delivery nanoplatforms for biophotonic applications. We highlight the targeted aims of the surface-engineered 2D BP for advanced nanophotonics, including photonic devices (optics, optoelectronics, and photocatalysis) and photoinduced cancer therapy, by means of various surface functionalities, such as heteroatom incorporation, polymer functionalization, coating, heterostructure design, etc. From the viewpoint of potential applications, the fundamental properties of surface-engineered 2D BP and recent advances in surface-engineered 2D BP-based nanophotonic devices are briefly discussed. For the photonic devices, surface-engineered 2D BP can not only effectively improve environmentally structural stability but also simultaneously maintain photoresponse performance, enabling 2D BP-based devices for a wide range of practical applications. In terms of the photoinduced cancer therapy, surface-engineered 2D BP is more appropriate for the treatment of cancer due to negligible toxicity and excellent biodegradation and biocompatibility. We also provide our perspectives on future opportunities and challenges in this important and fast-growing field. It is envisioned that this Account can attract more attention in this area and inspire more scientists in a variety of research communities to accelerate the development of 2D BP for more widespread high-performance nanophotonic applications.

Optoelectronic, thermoelectric and 3D-Elastic properties of lead-free inorganic perovskites CsInZrX6 (I, Cl and Br) for optoelectronic and thermoelectric applications

Halide perovskite materials have recently gained worldwide attention since they offer a new cost-effective way to generate renewable and green energy. In the current work, the structural, electrical, elastic, optical and thermoelectric properties of new perovskites CsInZrX6 (I, Cl and Br) were explored by density-functional theory (DFT). The results indicated that the computed lattice parameters agree really well with the current experimental and theoretical results. Moreover, the band structure profile strongly suggests that the compounds exhibit a semiconducting nature with a direct band gap. The analysis of their optical properties reveals that the perovskites possess a low reflectivity (below 23%) and a high optical absorption coefficient (106 cm−1). This is also supported by the evaluation of their calculated elastic constants and their related parameters in cubic structure which show that these compounds are brittle, mechanically stable and possess covalent bonds. On the other hand, in addition to exhibiting outstanding optoelectronic and mechanical characteristics, CsInZrCl6 also possesses dynamical stability, making it a promising candidate for application in various optoelectronic devices except for solar cells due to its relatively large bandgap. Furthermore, the BoltzTraP software was used to compute the materials’ thermoelectric properties, with the computed values of the figure of merit (ZT) for CsInZrBr6, CsInZrCl6 and CsInZrI6 being 0.76, 0.73 and 0.725, respectively. This is also a strong indication that these materials are potential for thermoelectric applications.

High-performance flexible photodetectors based on CdTe/MoS2 heterojunction.

Flexible photodetectors have attracted escalating attention due to their pivotal role in next-generation wearable optoelectronic devices. This work presents high-performance photodetector devices based on CdTe/MoS2 heterojunctions, showcasing outstanding photodetecting and distinctive mechanical properties. The MoS2 film was exfoliated from bulk layered MoS2 and covered by a sputtered ultrathin CdTe film (∼8.4 nm) to form a heterojunction. Benefitting from the photovoltaic effect induced by the built-in electrical field near the high-quality interface, the fabricated CdTe/MoS2 heterojunction photodetector can operate as a self-powered photodetector without any external bias voltage, especially showing a high photodetectivity of 5.84 × 1011 Jones, remarkable photoresponsivity of 270.3 mA W-1, fast photoresponse with a rise/fall time of ∼44.8/134.2 μs and excellent bending durability. These results demonstrate that the CdTe/MoS2 heterojunctions could have significant potential for future applications in optoelectronic devices.

Theoretical insights into the structural and optoelectronic properties of the ternary cesium tetrafluoridobromate semiconductor CsBrF4

This work deals with the first theoretical study of structural, electronic, and optical properties of CsBrF4 ternary compound by using first-principle calculations. The calculated structural parameters and atomic positions are in accordance with the experimental ones declared in the literature. The obtained electronic properties signalize that this compound is a semiconductor material with a direct energy band gap. According to the investigated optical properties, the vast optical absorption range in the ultraviolet region indicates that CsBrF4 semiconductor could be useful for specific applications in ultraviolet optoelectronic devices; consequently, this theoretical study is the potential to support future experimental research.

Theoretical insights into the structural and optoelectronic properties of the ternary cesium tetrafluoridobromate semiconductor CsBrF4

This work deals with the first theoretical study of structural, electronic, and optical properties of CsBrF4 ternary compound by using first-principle calculations. The calculated structural parameters and atomic positions are in accordance with the experimental ones declared in the literature. The obtained electronic properties signalize that this compound is a semiconductor material with a direct energy band gap. According to the investigated optical properties, the vast optical absorption range in the ultraviolet region indicates that CsBrF4 semiconductor could be useful for specific applications in ultraviolet optoelectronic devices; consequently, this theoretical study is the potential to support future experimental research.

The physical characteristics of Zintl TeRhCl for renewable applications: A DFT approach

Due to their adaptable electronic and structural attributes, Zintl phases play a crucial role in customizing materials for a wide range of applications. We utilized DFT to examine the optoelectronic, structural transport response of TeRhCl phase. Structural stability is established by analyzing the optimization curve and determining the formation energy through calculations. The band structure has been calculated, revealing an indirect bandgap of 0.75 eV when employing GGA and 1.43 eV with the mBJ approach. The TDOS and PDOS graphs support the band structure's characteristics. Based on their optical properties, TeRhCl exhibit optical activity in the visible region. The optical characteristics suggest that this compound is feasible for the application in optoelectronic devices. The thermoelectric properties are investigated by employing electronic structure analysis and Boltzmann transport theory. At elevated temperatures, a significant ZT value of 0.83 is attained. The thermoelectric and optical response indicate its potential utility in forthcoming applications for both thermoelectric and optoelectronics devices.

Synthesis of Hybrid Tin-Based Perovskite Microcrystals for LED Applications.

Considerable focus on tin-based perovskites lies on substitution to leadhalide perovskites for the fabrication of eco-friendly optoelectronic devices.The major concern related to tin-based perovskite devices are mainly thestability and the efficiency. However, thinking on the final commercializationscope, other considerations such as precursor stability and cost are majorfactors to carry about. In this regard, this work presents a robust and facilesynthesis of 2D A2SnX4 (A = 4-fluorophenethylammonium(4-FPEA); X = I, Br, I/Br) and 3D FASnI3 perovskite microcrystals followinga developed synthesis strategy with low-cost starting materials. In thisdeveloped methodology, acetic acid is used as a solvent, which helps to protectfrom water by making a hydrophobic network over the perovskite surface, andhence provides sufficient ambient and long-term inert atmosphere stability ofthe microcrystals. Further, the microcrystals are recrystallized in thin filmsfor LED application, allowing the fabrication of orange, near-infrared and purered emitting LEDs. The two-step recrystallized devices show better performanceand stability in comparison to the reference devices made by using commercialprecursors. Importantly, the developed synthesis methodology is defined as ageneric method for the preparation of varieties of hybrid tin-based perovskitesmicrocrystals and application in optoelectronic devices.

Synthesis of Hybrid Tin-Based Perovskite Microcrystals for LED Applications.

Considerable focus on tin-based perovskites lies on substitution to leadhalide perovskites for the fabrication of eco-friendly optoelectronic devices.The major concern related to tin-based perovskite devices are mainly thestability and the efficiency. However, thinking on the final commercializationscope, other considerations such as precursor stability and cost are majorfactors to carry about. In this regard, this work presents a robust and facilesynthesis of 2D A2SnX4 (A = 4-fluorophenethylammonium(4-FPEA); X = I, Br, I/Br) and 3D FASnI3 perovskite microcrystals followinga developed synthesis strategy with low-cost starting materials. In thisdeveloped methodology, acetic acid is used as a solvent, which helps to protectfrom water by making a hydrophobic network over the perovskite surface, andhence provides sufficient ambient and long-term inert atmosphere stability ofthe microcrystals. Further, the microcrystals are recrystallized in thin filmsfor LED application, allowing the fabrication of orange, near-infrared and purered emitting LEDs. The two-step recrystallized devices show better performanceand stability in comparison to the reference devices made by using commercialprecursors. Importantly, the developed synthesis methodology is defined as ageneric method for the preparation of varieties of hybrid tin-based perovskitesmicrocrystals and application in optoelectronic devices.

Accelerated Discovery of Halide Perovskite Materials via Computational Methods: A Review.

Halide perovskites have gained considerable attention in materials science due to their exceptional optoelectronic properties, including high absorption coefficients, excellent charge-carrier mobilities, and tunable band gaps, which make them highly promising for applications in photovoltaics, light-emitting diodes, synapses, and other optoelectronic devices. However, challenges such as long-term stability and lead toxicity hinder large-scale commercialization. Computational methods have become essential in this field, providing insights into material properties, enabling the efficient screening of large chemical spaces, and accelerating discovery processes through high-throughput screening and machine learning techniques. This review further discusses the role of computational tools in the accelerated discovery of high-performance halide perovskite materials, like the double perovskites A2BX6 and A2BB'X6, zero-dimensional perovskite A3B2X9, and novel halide perovskite ABX6. This review provides significant insights into how computational methods have accelerated the discovery of high-performance halide perovskite. Challenges and future perspectives are also presented to stimulate further research progress.

Accelerated Discovery of Halide Perovskite Materials via Computational Methods: A Review

Halide perovskites have gained considerable attention in materials science due to their exceptional optoelectronic properties, including high absorption coefficients, excellent charge-carrier mobilities, and tunable band gaps, which make them highly promising for applications in photovoltaics, light-emitting diodes, synapses, and other optoelectronic devices. However, challenges such as long-term stability and lead toxicity hinder large-scale commercialization. Computational methods have become essential in this field, providing insights into material properties, enabling the efficient screening of large chemical spaces, and accelerating discovery processes through high-throughput screening and machine learning techniques. This review further discusses the role of computational tools in the accelerated discovery of high-performance halide perovskite materials, like the double perovskites A2BX6 and A2BB′X6, zero-dimensional perovskite A3B2X9, and novel halide perovskite ABX6. This review provides significant insights into how computational methods have accelerated the discovery of high-performance halide perovskite. Challenges and future perspectives are also presented to stimulate further research progress.

Optically Mediated Nonvolatile Resistive Memory Device Based on Metal-Organic Frameworks.

Metal-organic frameworks (MOFs), characterized by tunable porosity, high surface area, and diverse chemical compositions, offer unique prospects for applications in optoelectronic devices. However, the prevailing research on thin-film devices utilizing MOFs has predominantly focused on aspects such as information storage and photosensitivity, often neglecting the integration of the advantages inherent in both photonics and electronics to enhance optical memory. This work demonstrates a light-mediated resistive memory device based on a highly oriented porphyrin-based MOFs film, in which the resistance state of the memristor is modulated by light, realizing the integration of the perception and storage of optical information. The memristor shows excellent performance with a wide light range of 405-785nm and a persistent photoconductivity phenomenon up to 8.3 × 103 s. Further mechanistic studies have revealed that the resistive switching effect in the memristor is primarily associated with the reversible formation and annihilation of Ag conductive filaments.

Morphological, structural, and electronic properties of green synthesized ZnO nanoparticles by experimental and DFT+U method – A review

In these decades, researchers have paid much attention to green synthesis methods because of their low cost and eco-friendliness. Among all other semiconductors, ZnO nanoparticles have huge applications in optoelectronics devices, solar cells, photocatalysis, transistors, etc. This review article explains the green synthesis methods and factors affecting the morphology of ZnO nanoparticles. The morphology shows different structures such as nanowires, cubic, hexagonal, flower-like structures, etc. The XPS peaks Zn-2p1/2, Zn-2p3/2, and O-1S suggest that the synthesized nanoparticles are ZnO. The theoretical review part explains the electronic and structural properties of wurtzite ZnO nanoparticles. The implementation of the Hubbard-U scheme in the d and p shells using Local Density Approximation (LDA) and Generalized Gradient Approximation (GGA) shows the drastic change in the electronic and structural properties of ZnO nanoparticles. The optimized lattice parameters and band gap using Hubbard parameters by different DFT codes are tabulated. Also, we compared computational and experimental results.

First principle investigations of opto-electronic and thermoelectric response of A2TlAsX6 (A = K, Rb; X = Cl, Br) compounds

We have investigated the structural, electronic, optical, and thermoelectric behavior of halide-based double perovskites A2TlAsX6 (A = K, Rb; X = Cl, Br) compounds to reveal their potential in various opto-electronic and thermoelectric applications using first-principle calculations. For the computation of the various properties of A2TlAsX6 (A = K, Rb; X = Cl, Br) compounds, we have used approximations available within density functional theory (DFT). The energy bands and density of states have been used to elucidate the electronic response of the studied compounds, while the interpretation of optical properties is presented in terms of dielectric tensor, absorption coefficient, reflectivity, refraction and energy loss spectra. The investigated compounds exhibit a direct band gap within the energy range of 1.36 to 2.24 eV, indicating the promising nature of these compounds for diverse optoelectronic applications. Moreover, thermoelectric properties such as the figure of merit, power factor, Seebeck coefficient, specific heat, electric and thermal conductivity have also been computed for the studied compounds. Our investigation unveils the remarkable optoelectronic characteristics of the studied perovskites, which can be attributed to their advantageous bandgap and highly effective light absorption capabilities. Furthermore, these perovskites showcase exceptional thermodynamic stability, elevated electrical conductivity, favorable figure of merit (ZT) values, and reduced thermal conductivities. These findings suggest their suitability for applications in optoelectronic devices and thermoelectric applications. In this study, it is found that A2TlAsBr6 compounds exhibit significant absorption in the visible spectrum, rendering them more favorable for optoelectronic applications compared to A2TlAsCl6 compounds. Conversely, for thermoelectric applications, the Cl-based perovskites studied show greater promise than their Br-based counterparts. The modified Becke–Johnson (mBJ) potential emerges as the most precise approach for analyzing the electronic, optical, and thermoelectric characteristics of A2TlAsX6 (where A = K, Rb; X = Cl, Br) perovskites, surpassing other approximations utilized in present study.

A systematic first-principles investigation of the structural, electronic, mechanical, optical, and thermodynamic properties of Half-Heusler ANiX (ASc, Ti, Y, Zr, Hf; XBi, Sn) for spintronics and optoelectronics applications.

This paper is the first to look at the structural, electronic, mechanical, optical, and thermodynamic properties of the ANiX (ASc, Ti, Y, Zr, Hf; XBi, Sn) half-Heusler (HH) using DFT based first principles method. The lattice parameters that we have calculated are very similar to those obtained in prior investigations with theoretical and experimental data. The positive phonon dispersion curve confirm the dynamical stability of ANiX (ASc, Ti, Y, Zr, Hf; XBi, Sn). The electronic band structure and DOS confirmed that the studied materials ANiX (ASc, Ti, Y, Zr, Hf; XBi, Sn) are direct band gap semiconductors. The investigation also determined significant constants, including dielectric function, absorption, conductivity, reflectivity, refractive index, and loss function. These optical observations unveiled our compounds potential utilization in various electronic and optoelectronic device applications. The elastic constants were used to fulfill the Born criteria, confirming the mechanical stability and ductility of the solids ANiX (ASc, Ti, Y, Zr, Hf; XBi, Sn). The calculated elastic modulus revealed that our studied compounds are elastically anisotropic. Moreover, ANiX (ASc, Ti, Y, Zr, Hf; XBi, Sn) has a very low minimum thermal conductivity (Kmin), and a low Debye temperature (θD), which indicating their appropriateness for utilization in thermal barrier coating (TBC) applications. The Helmholtz free energy (F), internal energy (E), entropy (S), and specific heat capacity (Cv) are determined by calculations derived from the phonon density of states.

Pressure and atomic size effects of IV cation on mechanical and electronic properties of Zn-IV-N2 (IV[dbnd]Si, Ge and Sn): First principles calculation

Zn-IV-N2 compounds, incorporating Si, Ge, and Sn, have emerged as pivotal materials for their mechanical and electronic properties, influencing optoelectronic devices and photovoltaic applications. Employing density functional theory (DFT), we comprehensively investigate the structural, elastic, mechanical, and electronic characteristics of ZnIVN2 (IVSi, Ge, Sn) under ambient and pressure conditions up to 20 GPa. Our findings suggest that a larger atomic size of the group IV cation can be more easily compressed than a smaller size. The mechanical stability criteria and the phonon dispersion show mechanical and dynamic stability in both ambient pressure and under high pressure up to 20 GPa. The ZnSiN2 and ZnGeN2 exhibit linear increments in bulk modulus (B), shear modulus (G), and Young's modulus (E) under pressure, while ZnSnN2 experiences a decrease in G and E. Notably, the energy gap of ZnSiN2, ZnGeN2, and ZnSnN2 (4.62 eV indirect, 2.82 eV, 1.16 eV, respectively) increases with pressure due to higher N s orbital energy, approaching the UV region. In the valence band, a hybridization of N p and Si/Ge/Sn p orbitals is observed, offering opportunities to tailor the band gap for optimal applications in optoelectronic devices. Preferentially adjusting group-IV elements over group-II elements is recommended for optimizing band gap modulation. The correlation between larger atomic size and decreased band gap energy highlights the potential to fine-tune material properties through controlled variations in group-IV elements.