Applications In Optoelectronic Devices Research Articles

Aggregation induced strong photoluminescence at room temperature in large-area C8BTBT thin films

Study of optical properties of 2,7-dioctyl[1]benzothieno[2,3-b]benzothiophene (C8BTBT) is promising for applications in low-cost and flexible optoelectronic devices. Here, we systematically investigated the thickness dependent structural and photophysical properties of large-area C8BTBT films. The large-area C8BTBT thin films of different thickness below 80 nm were prepared by off-centre spin coating method. Grazing incidence X-ray diffraction measurements confirm the highly crystalline nature of the thin films and reveal that crystal coherence length increases with increase of film thickness. The film morphology and its thickness were studied using atomic force microscopy. Further, optical absorption and emission behaviors of the thin films were analyzed. The results show strong ultraviolet (UV) emissions at room temperature. The photoluminescence behaviour of higher-thickness films differs from that of lower-thickness films. The thickness dependent UV emission spectra are explained in terms of defects and aggregation behavior of C8BTBT thin films. We determine the impact of thickness and aggregation (J- and H-type) on emission behaviors of the C8BTBT thin films. Our findings open a new avenue for the future optimization and prospective applications in photonics based on two-dimensional organic semiconductors.

Three-Step Ferroelastic Transitions from Hexagonal to Triclinic Phases in a Hybrid Perovskite: (1-Fluoromethyl-1-methylpyrrolidine)[CdCl3

Hybrid ferroelastic crystals have emerged as a hot research topic in recent years owing to their prospective applications in piezoelectric sensors, mechanical switches, and optoelectronic devices. Nevertheless, most of the documented materials exhibit one-step or two-step ferroelastic phase transition(s), and those with multistep ferroelastic transitions are extremely scarce. We present a new hexagonal molecular perovskite based on a fluoro-substituted flexible cyclic ammonium cation, (1-fluoromethyl-1-methylpyrrolidine)[CdCl3] (1), undergoing unusual three-step ferroelastic phase transitions from hexagonal paraelastic phase to orthorhombic, monoclinic, and triclinic ferroelastic phases at 388, 376, and 311 K, respectively, with Aizu notation of 6/mmmFmmm, mmmF2/m, and 2/mF-1, featuring spontaneous strain of 0.002, 0.023, and 0.110, respectively. Furthermore, variable-temperature single-crystal diffraction reveals that the phase-transition mechanism in 1 principally originates from intriguing dynamic change of organic cations and synchronous displacement of inorganic chains. This scarce instance of multistep hybrid ferroelastic provides important clues for finding advanced ferroelastic materials.

Acoustic and optical phonons in quasi-two-dimensional MPS3 antiferromagnetic semiconductors

We report the results of the investigation of the acoustic and optical phonons in quasi-two-dimensional antiferromagnetic semiconductors of the transition metal phosphorus trisulfide family with Mn, Fe, Co, Ni, and Cd as metal atoms. The Brillouin–Mandelstam and Raman light scattering spectroscopies were conducted at room temperature to measure the acoustic and optical phonon frequencies close to the Brillouin zone center and the Γ−A high symmetry direction. The absorption and index of refraction were measured in the visible and infrared ranges using the reflectometry technique. We found an intriguing large variation, over ∼28%, in the acoustic phonon group velocities in this group of materials with similar crystal structures. Our data indicate that the full-width-at-half-maximum of the acoustic phonon peaks is strongly affected by the optical properties and the electronic bandgap. The acoustic phonon lifetime extracted for some of the materials was correlated with their thermal properties. The results are important for understanding the layered van der Waals semiconductors and assessing their potential for optoelectronic and spintronic device applications.

Defects assisted the enhancement of optical and ferromagnetism in Zn1-xCoxS quantum dots: Toward efficient optoelectronic and spintronic applications

Colloidal Co-doped ZnS Quantum dots (QDs) were successfully synthesized through a facile and effective chemical co-precipitation method using polyethylene glycol (PEG) as a capping agent. A comprehensive study on the structure, optoelectronic, and magnetic properties of ZnS: Co2+ QDs was thoroughly carried out using diverse characterization techniques. Transmission electron micrographs reveal spherical QDs with a mean particle size of 5 ± 0.5 nm, whereas the X-ray diffraction (XRD) analysis and Raman spectroscopy confirm the exclusive presence of cubic ZnS phase structure, without any signs of Co-related impurity phases. Energy-dispersive x-ray (EDX) analysis verifies the presence of only three elements: Zinc, Cobalt, and Sulphur, with nearly stoichiometric proportions. X-ray photoemission (XPS) analysis confirmed the presence of Co2+ ions in the divalent oxidation state as well as the fair existence of sulphur vacancies. Optical measurements demonstrate that Co-doping in ZnS leads to a decrease in the optical band gap owing to the presence of defects that create localized states within the band structure. In addition, the refractive index (n) is found to increase with Co-doping level due to the increase in the polarizability. The outcomes of optical properties reveal that the tunability of the optical band gap and dispersive oscillator parameters in Co-doped ZnS QDs results in an enhancement of the non-linear optical parameters, such as third-order non-linear optical susceptibility χ(3), and non-linear refractive index n2, rendering them well-suited for applications in optoelectronic devices. Furthermore, the room-temperature photoluminescence (PL) spectra revealed that the Co-doped ZnS QDs have two broad emission bands, including the blue emission, and the green emission. By varying the level of Co-doping, it becomes possible to effectively control the relative PL intensities of dual-color emissions, highlighting their potential for producing adjustable color outputs. The room temperature ferromagnetic behaviour of the QDs has been observed and analyzed in accordance with the bound magnetic polarons model. These findings suggest that Co-doped ZnS QDs can be utilized effectively in the design of spintronic devices.

Tailoring the optical performance of sprayed NiO nanostructured films through cobalt doping for optoelectronic device applications

The current study aims to tailor the structural and nonlinear/linear optical characteristics of NiO nanostructures for optoelectronic applications. The spray pyrolysis procedure was applied to synthesize Ni1-xCoxO nanostructured films (x; 0, 0.04, 0.08, 0.12, 0.16 and 0.20). The functional groups and morphological investigation were performed by the FT-IR and SEM techniques. The structural and optical properties were investigated based on XRD and UV–vis measurements. The XRD investigations reveal that all samples have a cubic crystalline structure. The UV–vis analysis shows that the optical absorption of NiO nanostructures increased, and the energy bandgap decreased from 3.85 eV to 3.40 eV through cobalt doping. The Herve-Vandamme model was applied to investigate the linear refractive index for all samples. The nonlinear optical (NLO) behavior of all samples has been investigated. A significant improvement was accomplished through cobalt doping in the linear refractive index, optical conductivity, dielectric constants, NLO susceptibility and NLO refractive index of NiO. The achieved results suggest that cobalt-doped NiO nanostructured films have potential applications in linear/nonlinear optical devices and data storage.

Ab-initio study of strain-tunable g-GaN/BN nanoheterostructure for optoelectronic and photocatalytic applications.

Two-dimensional (2D) nanoheterostructures of materials, integrating various phase or materials into a single nanosheet have stimulated large-scale research interest for designing novel two dimensional devices. In contemporary analysis present work, we examined the structural and electronic properties of the isolated 2D BN and GaN monolayers. We have investigated the structural stability and optoelectronic and photocatalytic response of the g-GaN/BN nanoheterostructure along with its response to strain. Nanoheterostructure g-GaN/BN is predicted to be a direct bandgap semiconductor with wide gap of 4.45eV, whose value can be effectively modulated by applied strain ( , ranging from 4.55 ( = - 4%) to 3.58eV ( = 8%). We also discovered that the tensile strain of 8% can substantially tune the direct bandgap of nanoheterostructure to indirect band gap nature. Even more important, the biaxial tensile strain engineering accentuates an enhancement of optical absorption in the UV region, broadening the light harvesting of the g-GaN/BN nanoheterostructure with the shifting of first absorption peak from 4.64 ( = - 4%) to 3.71eV ( = 8%). Furthermore, strain-tuned band edge potentials arrangement perfectly fits the water reduction and oxidation redox potentials. Our findings portend that the g-GaN/BN nanoheterostructure has application in prospective nanoscale optoelectronic devices and photocatalytic hydrogen evolution system. First principles calculations in this study are performed using density functional theory. Generalized gradient approximation within PBEsol functional employed to address the electron-electron exchange-correlation effects. For avoiding periodic interactions between the layers, we have inserted a vacuum region of thickness 10Å in the z-direction. For ensuring the convergence accuracy of the computed results, convergence criteria of the iteration process is set to be 0.0001eV. Local modified Becke-Johnson, a semi local functional, is applied for calculating electronic and optical properties for more accuracy of results. As in layered 2D nanoheterostructure, a factual depiction of the van der Waals interactions cannot be provided by conventional DFT techniques. Accordingly, in order to incorporate these interactions, we had employed the dispersion correction method of Grimme's.

Origin of the Disparity between the Stability of Transmutated Mix-Cation and Mix-Anion Compounds

Transmutation is an efficient approach for material design. For example, ternary compound CuGaSe2 in chalcopyrite structure is a promising material for novel optoelectronic and thermoelectric device applications. It can be considered as formed from the binary host compound ZnSe in zinc-blende structure by cation transmutation (i.e., replacing two Zn atoms by one Cu and one Ga). While cation-transmutated materials are common, anion-transmutated ternary materials are rare, for example, Zn2AsBr (i.e., replacing two Se atoms by one As and one Br) is not reported. The physical origin for this puzzling disparity is unclear. In this work, we employ first-principles calculations to address this issue, and find that the distinct differences in stability between cation-transmutated (mix-cation) and anion-transmutated (mix-anion) compounds originate from their different trends of ionic radii as functions of their ionic state, i.e., for cations, the radius decreases with the increasing ionic state, whereas for anions, the radius increases with the increasing absolute ionic state. Therefore, for mix-cation compounds, the strain energy and Coulomb energy can be simultaneously optimized to make these materials stable. In contrast, for mix-anion systems, minimization of Coulomb energy will increase the strain energy, thus the system becomes unstable or less stable. Thus, the trend of decreasing strain energy and Coulomb energy is consistent in mix-cation compounds, while it is opposite in mix-anion compounds. Furthermore, the study suggests that the stability strategy for mix-anion compounds can be controlled by the ratio of ionic radii r 3/r 1, with a smaller ratio indicating greater stability. Our work, thus, elucidates the intrinsic stability trend of transmutated materials and provides guidelines for the design of novel ternary materials for various device applications.

Ultrahigh-performance indoor perovskite quantum dot photovoltaics via ligand-passivation engineering

The advancement of perovskite photovoltaic (PePV) systems for harnessing indoor light energy has been accelerated by the advent of the Internet of Things (IoT). However, the commercialization of these systems is impeded by moisture instability and restricted carrier lifetimes. Perovskite quantum dots (PQDs) offer viable solutions for increasing stability despite the potential effects of their organic ligands on efficiency. In this study, a ligand passivation strategy was employed in PQD photovoltaics (PQDPVs) to enhance the carrier lifetime. The inclusion of 2-phenyl-4-(1,2,2-triphenylvinyl) quinazoline (2PACz) in the PQD film effectively reduced surface defects and suppressed trap-assisted charge recombination, resulting in a prolonged carrier lifetime. The charge carrier lifetimes in passivated PQDPVs increased by 35 %. Additionally, the matching of the energy level of the PQD changed after 2PACz passivation engineering with that of the 2PACz showed an advantage for hole transport. PQDPVs fabricated using 2PACz-passivated PQDs showed an impressive output power density (Pout) of 123.3 µW/cm2 (power conversion efficiency of 41.1 %) under a fluorescent lamp (0.30 mW/cm2; 1000 lx) owing to improved open-circuit voltage and fill factor. Moreover, the device maintained more than 80 % of its initial efficiency for 500 h in an ambient atmosphere. These findings highlight the potential of PQDPVs to compete with conventional PePVs for application in self-powered optoelectronic devices under dim illumination.

Interplay between cation composition and charge transport characteristics in GAxFAyMA1-x-yPbI3 halide perovskites

Halide perovskites (HPs) are a well-known class of mixed electronic and ionic conductors with diverse applications in optoelectronic devices. The simultaneous transport of ionic and electronic carriers has beneficial and detrimental effects depending on the intended applications. There is an extensive understanding of the charge transport characteristics in HPs since the phenomenon is of applied relevance. However, considering that several applications use compositions containing mixed cations, a deeper understanding of how the degree of substitution and the characteristics of the substituent cations affect the charge transport characteristics is needed. To this end, we experimentally studied the ionic conductivity (σion), current–voltage hysteresis (J–E hysteresis), mobility (μe) and density (ne) of electronic carriers, and bandgap energies (Eg) of up to 24 compositions of methylammonium lead iodide partially substituted with guanidinium and formamidinium. The results indicate that σion, J–E hysteresis, and μe decrease with the degree of substitution, with the J–E hysteresis being smaller the larger size of the substituent cation. At the same time, σion appears to be lower in compositions with equimolar substituents, in which the entropy of mixing is maximum. On the other hand, a slight increase in ne was observed with the substitution degree, showing highest values for FA+-rich compositions, where Eg is the lowest. The results advance the understanding of how it is possible to customize charge transport properties through the rational design of compositions in HPs.

From monomer to polymer: Controlled synthesis and comprehensive analysis of poly(p-phenylene vinylene) via ROMP

This study focuses on synthesis and evaluation of [2.2] paracyclophane-1,9-diene to produce a soluble poly(p-phenylenevinylene) (PPV) derivative homopolymer using ring-opening metathesis polymerization (ROMP). The resulting homopolymer displayed a narrow polydispersity index (PDI) of 1.22, indicating precise control over polymerization. The PPV derivative exhibited excellent solubility in various organic solvents. Photophysical properties, including optical absorption and fluorescence emission spectra, were investigated to evaluate utilization in optoelectronic devices. Optical band gaps ranged from 2.21 to 2.25 eV for thin films and 2.07 to 2.19 eV for solutions, while the electrochemical band gap, determined by cyclic voltammetry, was 2.37 eV. These materials demonstrated promising fluorescence activity in various solvents and thin films, suggesting potential applications in organic light-emitting diodes (OLEDs) and related optoelectronic devices.

Real-Time Ab Initio Investigation on Hot Electron Relaxation Dynamics in Silicon.

The relaxation of hot electrons in semiconductors is pivotal for both energy harvesting processes and optoelectronics. Utilizing a self-developed non-adiabatic molecular dynamics simulation approach in the momentum space (NAMD_k), we have examined the dynamics of hot electrons in silicon. Whether excited from the Γ or L point, the relaxation dynamics exhibit two distinct stages. Initially, within 100 fs, electrons scatter with phonons throughout the Brillouin zone. Subsequently, over a few picoseconds, they further relax toward the conduction band minimum as a whole. This picture of hot electron relaxation is highly consistent with the quasi-equilibrium hot electron ensemble (HEE) concept. Throughout the hot electron relaxation process, energy transfer to phonons is efficient, leading to time-dependent phonon excitation, which is thoroughly analyzed. This investigation provides a novel perspective on hot electron relaxation in silicon, which holds substantive implications for the realm of photovoltaic and optoelectronic device applications.

Large area single crystal gold of single nanometer thickness for nanophotonics

Two-dimensional single crystal metals, in which the behavior of highly confined optical modes is intertwined with quantum phenomena, are highly sought after for next-generation technologies. Here, we report large area (>104 μm2), single crystal two-dimensional gold flakes (2DGFs) with thicknesses down to a single nanometer level, employing an atomic-level precision chemical etching approach. The decrease of the thickness down to such scales leads to the quantization of the electronic states, endowing 2DGFs with quantum-confinement-augmented optical nonlinearity, particularly leading to more than two orders of magnitude enhancement in harmonic generation compared with their thick polycrystalline counterparts. The nanometer-scale thickness and single crystal quality makes 2DGFs a promising platform for realizing plasmonic nanostructures with nanoscale optical confinement. This is demonstrated by patterning 2DGFs into nanoribbon arrays, exhibiting strongly confined near infrared plasmonic resonances with high quality factors. The developed 2DGFs provide an emerging platform for nanophotonic research and open up opportunities for applications in ultrathin plasmonic, optoelectronic and quantum devices.

Universal Surface Repairing Strategy Enabling Suppressed Auger Recombination in CsPbBr3 Perovskite Quantum Dots for Low Threshold Lasing in a Superlattice Microcavity

AbstractLead halide perovskite quantum dots (LHP QDs) emerge as versatile photonic sources in electroluminescence and laser devices. Their applications in optoelectronic devices are hindered by surface distortion and ligand stripping during the purification process. In addition, the device performance roll‐off suffers from the ultrafast non‐radiative Auger recombination (AR). To address these issues, herein, CsPbBr3 QDs are prepared with sizes ranging from 6.5 to 9.2 nm and the universal surface repairing strategy is proved to efficiently increase the biexciton lifetime and quantum yield up to 1.4 and 3 times, respectively. The strategy provides a PbBrx rich surface and strong binding didodecyldimethylammonium bromide (DDAB) ligands to achieve near‐unity photoluminescence efficiency, which significantly improves their stability against anti‐solvents and aging in ambient conditions. A single‐mode laser device is realized by self‐assembling the QDs into superlattice as optical microcavity, with low threshold of 9.45 µJ cm−2, quality factor of 2187 and ultrafast lifetime of 3.22 ps. The superlattice laser is demonstrated as an optical encoder with large coding bandwidth of 0.133 THz. This work proposes new insight into the non‐radiative AR process in these single‐component CsPbBr3 QDs, and will pave the way for optoelectronic devices working in intense conditions.

Field emission properties of LIG/ZnO heterojunction prepared by ultrafast laser direct writing

The facile in situ synthesis of graphene-coated metal-oxide nanoparticles and their potential applications in optoelectronic devices are highly anticipated. In this study, we prepared three-dimensional graphene flakes decorated with ZnO nanoparticles (LIG/ZnO) using femtosecond laser-induced zinc salt-containing cork. The LIG/ZnO heterojunction was formed by carbonizing the cork and decomposing the zinc salt in situ to coat LIG during laser irradiation. The correlation between the zinc salt concentration and the morphology, structure, and field-emission characteristics of LIG/ZnO was systematically investigated. The optimized LIG/ZnO-5 emitters demonstrate a decreased threshold electric field (Eth) of 1.07 V/μm, an enhanced field enhancement factor (β) value of 20,559, and a maximum current density of 18.07 mA/cm2 at 1.96 V/μm, representing the most superior performance reported to date. The enhanced field-emission performance of LIG/ZnO can be attributed to the larger number of effective emission sites from ZnO nanoparticles and LIG edges, as well as to the energy band variation induced by the heterostructures. Density functional theory (DFT) calculations show the migration of electrons from the LIG to the ZnO after the formation of the heterojunction, which elevates the Fermi level of emitters. In addition, the accumulation of electrons on the surface of ZnO nanoparticles in the presence of a strong electric field results in a downward shift of the energy band, thereby enhancing the likelihood of electron-vacuum tunneling.

Greener and Easily Available Solvent‐Assisted Preparation of High‐Efficiency Perovskite Solar Cells

To replace or reduce toxic solvents in perovskite solar cell (PSC) manufacturing, 2‐Methyltetrahydrofolate (2‐MTHF), as an important raw material for organic synthesis and an excellent solvent, is incorporated in PSCs as an additive cosoluble precursor to fabricate photolayer (FAPbI3) for the first time. It is investigated that this is not only a toxicity‐reducing strategy, but also an effective defect passivation method for manufacturing PSCs. The introduction of 2‐MTHF in a stoichiometric precursor solution is capable of inducing precursor film to generate perovskite films through a simple one‐step spin‐coating process, more than 15% of toxic solvents can be reduced. The perovskite trap state is decreased by the passivated perovskite crystal surface thus improving carrier lifetime, extraction rate, and photovoltaic performance. The maximum PCE of the solar cell when the 2‐MTHF volume fraction is optimized at 15% is improved to 23.58%, up from 7% in the control. Meanwhile, the notorious J–V hysteresis is much suppressed. Hence, it is expected that novel 2‐MTHF will find applications in PSCs and optoelectronic devices.

Microstructural evolution during densification process of neodymium-doped indium zinc oxide ceramic targets and application for high mobility films

Oxide targets are crucial materials for transparent conducting oxide (TCO) thin films used in optoelectronic devices. In this study, neodymium-doped indium zinc oxide (NdIZO) ceramic targets were prepared using an advanced pressureless oxygen atmosphere sintering process. By optimizing the experimental conditions, the best sintering parameters were obtained, resulting in dense, fine-grained, and uniformly microstructured NdIZO targets. The influence mechanism of different Nd doping concentrations on the phase composition, microstructure evolution, and electrical properties of the targets during the process of oxide composite powder, green body shaping, and sintering densification was analyzed in detail. The results showed that the pretreatment of the composite powder improved its dispersibility, and sintering activity. The NdIZO-2 target with an atomic ratio of Nd:In:Zn = 0.02:1:1, fabricated under optimal conditions, exhibited high density of 99.8 %, low resistivity of 5.2 mΩ cm, and an average grain size of about 3.9 μm, thereby demonstrating the best comprehensive performance. Moreover, the sputtered films prepared using NdIZO-2 targets also showed excellent properties with transmittance (T) of 88.1 %, electron mobility (μe) of 31.5 cm2/Vs, and resistivity (ρ) of 7.5 × 10−3 Ω cm. This work provides theoretical support for the preparation of high-quality indium zinc oxide (IZO) ceramic targets and their application in high-performance optoelectronic thin film devices.

Synthesis, analysis and characterizations of Dy3+ ions-doped CaBi2Nb2O9 phosphors for optoelectronic device applications

Synthesis, analysis and characterizations of Dy3+ ions-doped CaBi2Nb2O9 phosphors for optoelectronic device applications

Density functional theory study of the reaction mechanism of aluminum nitride synthesis by sol–gel method

In recent years, aluminum nitride has undergone significant advancements and has found extensive application in optoelectronic and microelectronic devices due to its remarkable physicochemical properties. The quality of aluminum nitride powder plays a critical role in determining device performance, thus making the synthesis of high-quality powder a prominent area of research. The sol–gel method is a widely used approach for producing superior powders. In this study, we investigated the ammonolysis-polymerization mechanism of tris(dimethylamino)aluminum monomer and dimer using Gaussian16 software at the B3LYP-D3BJ/6-311G(d,p) level. Our objective was to provide theoretical guidance for the experimental synthesis of aluminum nitride powders using the sol–gel method. Our findings demonstrate that the ammonolysis reaction of tris(dimethylamino)aluminum dimer proceeds through six spontaneous steps. The two calculated polymerization steps also exhibit spontaneous behavior. All reactions demonstrate rapid occurrence, suggesting the theoretical feasibility of the ammonolysis-polymerization reaction of tris(dimethylamino)-aluminum dimer for synthesizing aluminum nitride.

Synthesis, structural, optical, dielectric, magnetic and magneto-dielectric properties of CoFe2O4 and Graphene Quantum Dots (GQDs) decorated CoFe2O4 hybrid nanocomposite

A sol-gel synthesis method was used for the synthesis of pure CoFe2O4 (CFO) as well as Graphene Quantum Dots (GQDs) decorated CoFe2O4 Hybrid Nanocomposite (GCHN). From X-ray diffraction (XRD) data it was analyzed that both these samples have a cubic structure with Fd-3m space group. Using Debye-Scherer's equation, the average sizes were determined to be 24.48 and 13.74 nm, respectively. FTIR spectra revealed details about vibration bands and functional groups present. Raman spectra confirmed existence of GQDs in GCHN with an ID/IG ratio of ∼0.8. The results of Field emission scanning electron microscopy (FESEM) analysis exhibited microstructural morphological details having shapes of grains to be non-uniform in shape. UV–visible data was used to calculate band gap (Eg) energy by using Tauc plot method and found to be 2.52 eV and 2.99 eV respectively for CFO and GCHN. Urbach energy (EU) was found to be 1.03 and 1.19 eV for CFO and GCHN respectively. The dielectric properties of GCHN were analyzed for dependence on frequency and temperature and explained by Maxwell-Wagner-type polarization. The frequency-dependent ac conductivity (σac) followed Jonscher's power law and investigated dynamics of ion hopping. Impedance spectroscopy was used to further evaluate Nyquist plots with respect to temperature as well as magnetic fields to estimate grain and grain boundary contributions. This was further used to evaluate electrical characteristics such as relaxation time (τ). Activation energies (Ea) calculated using relaxation times were found to be 0.48 eV for CFO while 0.22 and 0.92 eV for GCHN respectively. At room temperature, CFO and GCHN exhibited a strong magneto-dielectric coupling (MD) and showed negative magneto-dielectric properties in low-frequency regions. At room temperature (RT), magnetization values of CFO and GCHN displayed were 38.48 and 7.52 emu/g respectively. The lower magnetization value was possibly due to shielding by GQDs in GCHN. These properties enable it to be used as a potential application in microelectronic systems, spintronics, optical and optoelectronic devices, magnetic resonance imaging (MRI) and memory devices.

Advanced Synthesis and Characterization of CdO/CdS/ZnO Heterostructures for Solar Energy Applications.

This study introduces an innovative method for synthesizing Cadmium Oxide /Cadmium Sulfide/Zinc Oxide heterostructures (CdO/CdS/ZnO), emphasizing their potential application in solar energy. Utilizing a combination of electrochemical deposition and oxygen annealing, the research provides a thorough analysis of the heterostructures through scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) spectroscopy, X-ray diffraction (XRD), Raman spectroscopy, and photoluminescence (PL) spectroscopy. The findings reveal a complex surface morphology and a composite structure with significant contributions from hexagonal CdS and cubic CdO phases. The study highlights the uniformity in the distribution of luminescent centers and the crystalline quality of the heterostructures, which is evident from the PL analysis. The redshift observed in the emission peak and the additional peaks in the excitation spectrum indicate intricate optical properties influenced by various factors, including quantum confinement and lattice strain. The research demonstrates these heterostructures' potential in enhancing solar cells' efficiency and applicability in optoelectronic devices. This comprehensive characterization and analysis pave the way for future optimization and application in efficient and sustainable solar energy solutions.