Applications In Optoelectronic Devices Research Articles

Ideal Photothermal Materials Based on Ge Subwavelength Structure

Photothermal materials often prioritize solar absorption while neglecting thermal radiation losses, which diminishes thermal radiation conversion efficiency. This study addresses this gap by introducing a germanium (Ge) subwavelength structure (SWS) designed to optimize both solar absorption and infrared emissivity. Using a self-masked reactive ion etching (RIE) technique, we achieved a peak absorption of 98.8% within the 300 nm to 1800 nm range, with an infrared emissivity as low as 0.32. Under solar illumination of 1000 W/m2, the structure’s temperature increased by 50 °C, generating a heating power of 800 W/m2. Additionally, it demonstrated good mechanical and thermal stability at high temperatures and possessed a hydrophobic angle of 132°, ensuring effective self-cleaning. These characteristics make the Ge SWS suitable for application in solar panels, displays, sensors, and other optoelectronic devices.

Shortwave-Infrared Silver Chalcogenide Quantum Dots for Optoelectronic Devices.

Silver chalcogenide (Ag2X, X = S, Se, Te) semiconductor quantum dots (QDs) have been extensively studied owing to their short-wave infrared (SWIR, 900-2500 nm) excitation and emission along with lower solubility product constant and environmentally benign nature. However, their unsatisfactory photoluminescence quantum yields (PLQYs) make it difficult to obtain optoelectronic devices with high performances. To tackle this challenge, researchers have made great efforts to develop valid strategies to improve the PLQYs of SWIR Ag2X QDs by suppressing their nonradiative recombination of excitons. In this Perspective, we summarize the significant approaches of heteroatom doping and surface passivation to enhance the PLQYs of SWIR Ag2X QDs, and we conclude their application in high-efficiency optoelectronic devices. Finally, we examine the future trends and promising opportunities of Ag2X QDs with regard to their optical properties and optoelectronics. We believe that this Perspective will serve as a valuable reference for future advancement in the synthesis and application of SWIR Ag2X QDs.

Study of Luminescence Phenomena of Tb (III) Containing Fluroquinoline for Application in Optoelectronic Devices.

This study presents a series of six vivid green Tb(III) complexes, denoted by the general formula [Tb(L)3.secondary sensitizers], where L represents 1-cyclopropyl-7-(4-ethylpiperazin-1-yl)-6-fluoro-4-oxoquinoline-3-carboxylic acid and secondary sensitizers consist of heterocyclic N-donor aromatic systems. The synthesis of these complexes were achieved through a solvent-assisted grinding method, and their characterization involved various techniques such as CHN analysis, FTIR, NMR, UV, XRD, and NIR spectroscopy. These analyses confirmed the successful synthesis of complexes with coordination between the quinoline moiety and the metal ion. Photoluminescence studies were conducted in solid and solution phases, revealing excellent luminescence properties. The bright green color emitted by the complexes upon exposure to UV rays was attributed to the hypersensitive 5D4 → 7F5 transition. J-O analysis indicated an asymmetrical coordination environment around in the complexes. Additionally, various radiative properties (Ared, Anred, η, βexp, σs) and band gap values were determined, highlighting the potential applications of these complexes in diverse optoelectronic fields. Chromaticity evaluation demonstrated high color purity in both solid and solution phases. Furthermore, the CCT value identified the solid complexes as a cool light source. Overall, the analyses supported the exceptional luminosity of synthesized complexes, positioning them as promising luminescent materials for a wide range of devices.

Flexibility, Dispersion Property, and Giant Sunlight Absorption of Monolayer MX2 (M = Zr, Hf; X = S, Se) and Related Janus MXY (M = Zr, Hf; X = S, Y = Se)

IVB–VIA transition metal dichalcogenides (TMDs) MX2 (M = Zr, Hf; X = S, Se) and related Janus MXY (M = Zr, Hf; X = S, Y = Se) have garnered significant attention due to their unique optoelectronic properties. To further explore their potential in flexible photonics, their mechanical, band dispersion, and optical dielectric properties using orbital hybrid theory are investigated. The results reveal that the out‐of‐plane linear compression resistance of these materials is considerably lower than their in‐plane resistance, primarily because van der Waals interactions are much weaker compared to ionic bond interactions. This characteristic makes them less susceptible to external pressure and torsional forces, positioning them as promising candidates for flexible optoelectronic devices. Furthermore, the presence of multiple energy bands at the same momentum state suggests a tendency toward metal–insulator transitions. Notably, the materials exhibit a high photon flux, indicating robust photoelectric conversion capabilities, making them suitable for applications in photoelectric transducers. This study not only deepens the understanding of the optoelectronic and mechanical properties of IVB–VIA TMD materials, but also offers theoretical guidance for the development and application of flexible optoelectronic devices based on IVB‐VIA TMDs and related Janus materials.

Theoretical Insights into Off-Stoichiometric Zr(x)Ti(1-x)IrSb Half-Heusler Alloys: A First Principle Calculations.

This study presents a theoretical investigation into the phase stability, electronic, and optical properties of off-stoichiometric Zr_{x}Ti_{1-x}IrSb (x = 0, 0.0625, 0.1875, 0.25, 0.50, 0.75, 1) compounds. Using first-principles calculations, we explore how varying Zr and Ti concentrations can tune the electronic and optical properties of these half-Heusler alloys. The Structural, optical, and electronic properties were meticulously analyzed with both the GGA-PBE and Meta-GGA-SCAN approximations, as implemented in the Vienna Ab initio Simulation Package (VASP). The dynamical stability of these compounds was assessed using the Phonopy package. Our findings reveal that these alloys exhibit semiconductor behavior with tunable band gaps, and their optical properties show significant variation across different compositions, particularly in the visible light range. The compounds also demonstrate robust dynamical stability, indicating their potential for practical applications in electronic and optoelectronic devices. These results underscore the versatility of Zr_{x}Ti_{1-x}IrSb alloys and highlight their promise for next-generation technology.

Random alloy growth of AlAs0.08Sb0.92 on GaSb under high Group-V flux condition

The growth of AlAsxSb1-x epilayers with x < 0.1 is crucial for various optoelectronic device applications. However, achieving the desired alloy composition and lattice-matched condition remains challenging. In this study, the epitaxial growth of the random alloy AlAsSb on GaSb was investigated using molecular beam epitaxy. The objective was to determine the optimal growth condition to obtain AlAs0.08Sb0.92 on GaSb (lattice-matched to GaSb) with a high growth rate and under a high group-V/III beam equivalent pressure (BEP) ratio. The growth parameters, including the group-V/III BEP ratio, growth rate, and temperature, were studied to monitor the change in the structural properties of the AlAsSb epilayer. It was shown that the As incorporation in AlAsSb was higher than expected at high growth rate and under high Sb BEP condition. The results demonstrated that increasing the growth temperature while decreasing the As BEP did not significantly improve the crystal quality where the optimization of group-V/III BEP ratio and As BEP is effective to obtain AlAs0.08Sb0.92 on GaSb and enhance the crystal quality. The findings provide valuable insights into the growth dynamics of AlAsSb to achieve high quality and lattice-matched epilayers grown on GaSb which is well-suited for a range of optoelectronic applications.

Piezoelectric dispenser printing and intense pulse light sintering of AgNW/PEDOT:PSS hybrid transparent conductive films.

A hybrid transparent conductive films (TCFs) combining silver nanowires (AgNWs) and poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) was fabricated using a piezoelectric dispenser printing method. The innovation lies in optimizing the ink composition and employing intense pulsed light (IPL) sintering to enhance the TCF's performance. The optimized AgNW/PEDOT:PSS mixture, with an 8:2 ratio, achieved a figure of merit (FOM) of 28.05 × 10⁻³/Ω, corresponding to a sheet resistance of 9.93 Ω/sq. and a transmittance of 88.0%. This represents a significant improvement over the pre-sintering FOM of 24.09 × 10⁻³/Ω. Additionally, the hybrid TCFs exhibited outstanding structural stability, maintaining functionality after 7000 mechanical bending cycles. The results enable applications in flexible optoelectronic devices, and highlight the potential of this method to produce high-performance, flexible, and durable transparent electrodes, advancing the development of next-generation optoelectronic devices.

Multimode Luminescence Tailoring in PMA4Na(In,Sb)Cl8 Organic–inorganic Hybrid Metal Halide via Rigid Benzene Ring Induced Local Lattice Distortion

AbstractLow dimensional organic‐inorganic hybrid metal halide materials have attracted extensive attention due to their superior optoelectronic properties. However, low photoluminescence quantum yields (PLQYs) caused by parity‐forbidden transition hinder their further application in optoelectronic devices. Herein, a novel yellow‐emitting PMA4Na(In,Sb)Cl8 (C7H10N+, PMA+) low‐dimensional OIMHs single crystal with a PLQY as high as 88 % was successfully designed and synthesized, originating from the fact that the doping of Sb3+ effectively relaxes the parity‐forbidden transition by strong spin‐orbit (SO) coupling and Jahn‐Teller (JT) interaction. The as‐prepared crystal shows an efficient dual emission peaking 495 and 560 nm at low temperature, which are ascribed to different levels of 3P1→1S0 transitions of Sb3+ in [SbCl6]3− octahedral caused by JT deformation. Moreover, wide‐range luminescence tailoring from cyan to orange can be achieved through adjusting excitation energy and temperature because of flexible [SbCl6]3− octahedral in the PNIC lattice. Based on a relative stiff lattice environment, the 560 nm yellow emission under 350 nm light excitation exhibits abnormal anti‐thermal quenching from 8 to 400 K owing to the suppression of non‐radiative transition. The multimode luminescence regulation enriches PMA4Na(In,Sb)Cl8 great potential in the field of optoelectronics such as temperature sensing, low temperature anti‐counterfeiting and WLED applications.

Photo‐Induced Ultrafast Charge Transfer and Air‐Stable Radical Formation in Tetraphenylpyrene Derivatives

AbstractStable organic radicals generated by photo‐excitation hold applications in molecular switching devices and information storage. It remains challenging to develop photo‐generated radical materials with rapid response and air stability in the solid state. Here, we report a structure based on 1,3,6,8‐tetraphenylpyrene derivative (Py‐TTAc) displaying photo‐induced radicals with air stability in the solid state. Photo‐induced electron transfer, exposed to a 365 nm ultraviolet lamp for 1 minute, affords radicals in Py‐TTAc powder as confirmed by electron paramagnetic resonance (EPR) spectroscopy. The maximum radical concentration reaches 2.21 % after continuous irradiation for 1 hour and recurs more than 10 times without any chemical degradation. The mechanistic study according to the femtosecond transient absorption (fsTA) and X‐ray technology suggests that the radicals are derived from photo‐induced symmetry‐breaking charge separation (SB‐CS) and stabilized through non‐covalent interactions. The photo‐generated stable radical system is employed in anti‐counterfeiting paper and optoelectronic device applications. This study will provide insights into the development of photoactive organic radical materials.

Photo-Induced Ultrafast Charge Transfer and Air-Stable Radical Formation in Tetraphenylpyrene Derivatives.

Stable organic radicals generated by photo-excitation hold applications in molecular switching devices and information storage. It remains challenging to develop photo-generated radical materials with rapid response and air stability in the solid state. Here, we report a structure based on 1,3,6,8-tetraphenylpyrene derivative (Py-TTAc) displaying photo-induced radicals with air stability in the solid state. Photo-induced electron transfer, exposed to a 365 nm ultraviolet lamp for 1 minute, affords radicals in Py-TTAc powder as confirmed by electron paramagnetic resonance (EPR) spectroscopy. The maximum radical concentration reaches 2.21 % after continuous irradiation for 1 hour and recurs more than 10 times without any chemical degradation. The mechanistic study according to the femtosecond transient absorption (fsTA) and X-ray technology suggests that the radicals are derived from photo-induced symmetry-breaking charge separation (SB-CS) and stabilized through non-covalent interactions. The photo-generated stable radical system is employed in anti-counterfeiting paper and optoelectronic device applications. This study will provide insights into the development of photoactive organic radical materials.

Comparative VUV Synchrotron Excitation Study of YAG: Eu and YAG: Cr Ceramics

Using synchrotron radiation, a comparative VUV excitation study of YAG ceramics doped with Eu3+ and Cr3+ ions under VUV excitation (10.5–3.7 eV) at 9 K was conducted in this work. Both ceramics exhibit distinct excitation peaks in the VUV region, indicating high-energy transitions related to the internal electronic levels of the dopants and interband transitions within the YAG matrix. For YAG:Eu, the main excitation peaks at 6–7 eV correspond to transitions within the 4f-shell of Eu3+ and Eu3+-O2− charge transfer states, showing weak dependence on the crystal field and high energy conversion efficiency. In contrast, YAG:Cr shows broad excitation bands due to transitions between levels influenced by strong crystal field interactions, resulting in lower luminescence efficiency. The study highlights the importance of crystal structure and dopant interactions in determining the spectral characteristics of YAG-based ceramics, offering potential for their application in advanced optoelectronic devices.

A THEORETICAL STUDY OF THE PHYSICAL PROPERTIES OF HEXAGONAL GALLIUM NITRATE USING DENSITY FUNCTIONAL THEORY

First-principles calculations based on density functional theory (DFT) have been used to investigate structural, electronic, optical and thermodynamic aspects of the α-GaN crystal. Based on local density approximations (LDA), Generalized gradient approximation (GGA) and meta-generalized gradient approximation (m-GGA) functional methods, the band gap energies of α-GaN crystals have been estimated as 1.962 eV, 2.069 eV and 2.354 eV. The band gap energies that are presented in these studies are in accordance with the ones from the other experimental and theoretical studies. Besides, our findings give us knowledge about the electronic and optical properties of α-GaN crystal. The band gap energies in the α-GaN crystal are the key factors that define its electrical and optical characteristics. They are the energy range in which the electrons can be exited from the valence band to the conduction band, which in turn affects the material's conductivity and the ability of the material to absorb and emit light. The approximate of our results with the previous researches indicates the reliability of our findings and thus increases our knowledge of α-GaN's electronic and optical phenomena. The orbital characteristics of the Ga and N atoms were found by simulating the density of state and the partial density of state for α-GaN. Besides the analysis of the band structure, density of states and optical properties of the compound we also included. The results show that α-GaN has a direct bandgap, which is at the G point in the Brillouin zone. This is the reason for its great potential for the development of optoelectronic devices. Also, we use the three approximations that are given earlier to find the optical characteristics (the absorption coefficient) of the compound. In addition to that, the thermodynamic properties that can be calculated like Debye temperature, enthalpy, free energy, entropy and heat capacity enable us to understand the thermal behavior of the compound better. The heat capacity of α-GaN is detected to be 17.3 Jmole-1K-1, with a Debye temperature of 824.6K. This research will offer a detailed interpretation of α- G-N, covering all its basic properties and the possible applications in optoelectronic and electronic devices. The results of this study are very important and the new technologies that will be developed based on the α-GaN research will be very beneficial.

Synergy of photoluminescence emission and antibacterial activity of Ag-Cu2O nanocomposite

Conglomerate nanocomposites comprising metal and metal oxide hold significant potential for exhibiting properties that surpass the combined characteristics of their individual components, owing to the interactions occurring at the interfaces between the metal and metal oxide elements. In this study, we present the synthesis of Cu2O nanoparticles (NPs) (with diameters ranging from 40 to 53 nm) and Ag-Cu2O nanocomposites using an aqueous solution method at room temperature, employing varying concentrations of Ag NPs. Through optical absorption studies, we determined the optical band gap of Cu2O NPs in 0.5Ag-Cu2O, 1Ag-Cu2O, and 1.5Ag-Cu2O nanocomposites samples to be 2.13 eV, 2.25 eV, 2.34 eV, and 2.41 eV, respectively. The x-ray diffraction data are analysed using the Williamson–Hall technique and revealed noteworthy variations in microstructural characteristics such as strain and stress within the Cu2O nanocrystallites fabricated under different Ag concentrations. The nanocomposites amplified the intensities of violet-blue, blue, and green photoluminescence (PL) emissions, attributable to the interfaces between Ag and Cu2O, lattice mismatches, and the induced microstructural parameters lattice strain, and stress of Cu2O nanocrystallites. The enhanced PL intensities can be attributed to the influence of the local electric field on the Ag core composites. The Ag-Cu2O nanostructure exhibits potential applications in water purification technologies, while the PL emission properties and low band gap (∼2.13 eV) hold promising applications in optoelectronic devices. The antibacterial activities of Cu2O and Ag-Cu2O nanomaterials against Enterococcus faecalis and Escherichia fergusonii are examined using MH agar well plate diffusion methods. Here, Ag NPs enhance bactericidal effectiveness through enhanced interaction with bacteria and the release of Ag+ ions, while the Cu2O shell discontinuity on Ag NPs contributes to their unique antibacterial properties.

Synthesis of Arrayed Tungsten Disulfide Nanotubes.

Tungsten disulfide nanotubes (WS2-NTs), with their cylindrical structure composed of rolled WS2 sheets, have attracted much interest because of their unique physical properties reflecting quasi-one-dimensional chiral structures. They exhibit a semiconducting electronic structure regardless of their chirality, and various semiconducting and optoelectronic device applications have been demonstrated. The development of techniques to fabricate arrayed WS2-NTs is crucial to realizing the highest device performance. Since the discovery of WS2-NTs, various synthesis techniques have been reported; however, horizontally arrayed WS2-NTs have never been successfully synthesized. Here, we demonstrate a simple technique to synthesize arrayed WS2-NTs. Through precise temperature and gas control, W18O49 nanowires are grown along the [1̅101] direction on an r-plane sapphire substrate, and the nanowires are converted into nanotubes via sulfurization under optimized conditions. The demonstrated synthesis technique for arrayed WS2-NTs will play a central role in the fabrication of devices using transition-metal dichalcogenide nanotubes.

Abnormal Response of Indirect Excitons to Non‐Uniform Elastic Strain in MoS2 Flakes

AbstractRegulating the electronic structures and carrier dynamics in 2D materials via elastic strain is a fascinating avenue for tailoring their optoelectronic properties at atomic scale. Here, the abnormal response of indirect excitons to non‐uniform elastic strain in MoS2 flakes is reported. The non‐uniform elastic strain in the MoS2 flakes is introduced by transferring them to pre‐prepared convex cross structures on a SiO2/Si substrate, where the topography and strain distribution are determined by atomic force microscopy and Raman spectroscopy, respectively. It is observed that the emission energy of the indirect excitons shows an unexpected blue‐shift followed by a red‐shift with increasing the local tensile strain, which is in sharp contrast to the linear red‐shift of the direct excitons. Density functional theory calculations reveal that the abnormal energy shift of the indirect excitons in the MoS2 flakes arises from the strain‐induced competition between two indirect bandgap transitions and the spatial exciton funnel effect in the non‐uniform strain field. This work provides new insights into the elastic strain effect on the indirect excitons in 2D semiconductors, which possesses potential applications in flexible optoelectronic devices.

Cost‐Effective Approach to Fabricate Oxide‐Based Bulk Thermoelectric Generator for Low‐Grade Waste Heat Harvesting

Oxide materials are well explored in thermoelectric and optoelectronic device applications due to their wide range of tunable properties, thermal stability, compatibility with other materials, nontoxicity, and earth abundancy. As a result, it can often be integrated into devices, which facilitates the development of oxide‐based thermoelectric generators at low cost. In this work, we synthesized BaxCoO2 and graphene‐doped In2O3 by solid‐state reaction route and then incorporated them in thermoelectric generator for the first time. A preliminary 3‐couple device is designed on a glass substrate. Here, the unique aspect is that graphite paint is used for the first time to make contact between oxide and metal electrodes instead of earlier used soldering and diffusion techniques, which prevents metals from diffusing in the oxide matrix. This device generates an open‐circuit voltage of 30 mV whereas it produces an output power of 0.3 μW with power density of ≈15.5 nW cm−2 for ΔT of 60 K, which is comparable to earlier reported metal‐based Bi0.5Se1.5Te3/Bi2Se0.3Te2.7TE devices. Further, the physical dimensions of the generators can be adjusted and the temperature gradient can be increased to get the desired power. This work offers a promising strategy for the development of thick as well as thin thermoelectric generators at an affordable cost.

Thin film synthesis and photovoltaic performance of polypyrrole@cobalt hydroxide composites for solar cells and optoelectronic devices

Mono-nanocomposites (MNCs) comprising polypyrrole (PPy) and cobalt hydroxide nanoparticles (Co(OH)2 NPs) are emerging as highly favorable contenders for applications in solar cells and optoelectronic devices, owing to their distinctive attributes encompassing robust light absorption, elevated conductivity, and commendable chemical stability. This investigation delves into the production of a thin film [PPy@Co(OH)2]MNC utilizing the physical vapor deposition (PVD) method. The structural and morphological characteristics of the [PPy@Co(OH)2]MNC thin film were scrutinized through X-ray diffraction (XRD) and scanning electron microscopy (SEM). Optical properties, namely reflectance (R), absorbance (Abs), and transmittance (T) within the UV–vis–NIR spectrum, were precisely gauged at room temperature. Time-dependent density functional theory (TD-DFT) calculations and optimizations were conducted to analyze the geometric parameters, while the refractive index dispersion was probed using the single oscillator Wemple-Didomenico (WD) model. Additionally, the energy of a single oscillator and the energy of dispersion were quantified. The [PPy@Co(OH)2]MNC thin film exhibited pronounced light absorption across the UV–vis–NIR spectrum, characterized by a bandgap of 1.6 eV. The Au/[PPy@Co(OH)2]MNC/p-Si/Al heterojunction device demonstrated a power conversion efficiency and fill factor (FF) of 2.6 % and 55.07 %, respectively, under an irradiance of 100 W/cm2. The findings of this investigation underscore the potential of [PPy@Co(OH)2]MNC-based thin films as auspicious candidates for deployment in solar cells and optoelectronic devices.

A 0D Ge(II)-Halide-Based Perovskite with Enhanced Semiconducting Behavior for Electronic Capacitors.

Perovskite materials have surged to the forefront of materials science, captivating researchers worldwide with their distinctive crystal lattice arrangement and remarkable optical, electric and dielectric attributes. The current study focuses on the development of a novel zero-dimensional (0D) Ge(II)-based hybrid perovskite, formulated as NH3(CH2)2NH3GeF6, and synthesized through a gradual evaporation process conducted at room temperature. The crystal structure is characterized by an arrangement of organic cations and isolated octahedral [GeF6]2- groups. This configuration is stabilized by relatively weak intermolecular bonds. A comprehensive analysis of the material's thermal properties using differential scanning calorimetry (DSC) revealed a distinct phase transition occurring at approximately 323 K, which was further confirmed through electrical measurements. The studied compound provided a broad absorption range across the visible spectrum and an optical band gap of 3.30 eV, indicating its potential for semiconducting applications in optoelectronic devices. Photoluminescence PL analysis displays a blueish broad-band emission with a high color rendering index CRI value of 91, when excited at 325 nm. This emission primarily originates from the self-trapped excitons (STEs) recombination in the inorganic [GeF6]2-. Herein, the temperature-dependent behavior of grain conductivity exhibited an Arrhenius-type pattern, with an activation energy (E a) of 0.46 eV, confirming the semiconductor nature of the investigated compound. In addition, a deep investigation of the alternating current conductivity, analyzed using Jonscher's law, demonstrates that the conduction mechanism is effectively described by the correlated barrier hopping (CBH) model. The dielectric performances show a significant dielectric constant (ε' ∼ 103). Thus, all these interesting physical properties of this hybrid perovskite have paved the way for advancements in various technological applications, particularly in the field of electronic capacitors.

Theoretical calculations of nonlinear optical responses for interpreting nonconjugated molecular systems to affect non-optimal properties

Understanding the intricacies of polymorphic origins in nonconjugated crystal systems is crucial for optimizing their properties. This study focuses on the crystal growth, characterization, and nonlinear optical (NLO) responses of a system analyzed using single crystal X-ray analysis, revealing a monoclinic geometry. Hirschfeld surface analysis emphasized the significance of intermolecular interactions in driving polymorph development, shedding light on the structural nuances influencing the material’s properties. Through the evaluation of density functional theory parameters, the research found that the NLO responses of the system were as efficient as those of widely recognized materials like urea and KDP. Moreover, the stability of the system was confirmed through (NBO) analysis, showcasing its potential for practical applications. By manipulating the polymorphic crystal forms, researchers can potentially unveil new crystalline materials with tailored properties suitable for applications in optical and optoelectronic devices. This work underscores the importance of exploring novel crystal engineering strategies to harness the full potential of materials in the realm of advanced technologies.

Modification of microstructure, optical, and electrical properties in 180 keV Co and Fe implanted Al1.5Ga0.5O3 thin-films

We report the microstructure, optical and electrical properties of Al1.5Ga0.5O3 thin films implanted by 180 keV Fe and Co ions. The X-ray diffraction pattern confirmed rhombohedral structure with R 3‾ c space group for pristine and Fe-implanted films. The Co-implanted films showed amorphous structure. SRIM simulations suggested oxygen vacancy in the films. The atomic force microscopy confirmed the formation of spherical-shaped particles (17–20 nm) in Co-implanted GaAlO_Si_550 films. The RMS roughness of the GaAlO_Si_550 films increased from 19 nm to 25 nm at higher Co-ion implantation fluences. X-ray photoelectron spectroscopy supported the formation of oxygen vacancy and non-stoichiometry at surface of the films. Electrical conductivity of the films enhanced up to 10−2- 10−3 S/m by metallic Fe- and Co ion implantation. Optical band gap was found at ∼3.85 eV for GaAlO_Al_550 and ∼4.04 eV for GaAlO_Si_550 pristine films. Optical band gap was stabilized in the range of 3.75–4.52 eV for Fe- and Co-implanted films, which can be useful for opto-electronic device applications in the UV and deep blue region.