Antiparallel Configuration Research Articles

Electrically controlled nonlocal transport in antiferromagnet/superconductor junctions with Rashba spin-orbital coupling

Abstract We theoretically investigate nonlocal transport phenomena at an antiferromagnet/normal/superconductor/antiferromagnet junction. Both parallel and antiparallel configurations are considered, with the N\'{e}el vector aligned with the $z$ axis in the left antiferromagnet and with the $z$ and -$z$
 axes in the right antiferromagnet, respectively.
In the parallel configuration, only equal-spin crossed Andreev reflection (CAR) is allowed, as the conventional CAR is forbidden. As the Rashba spin-orbital coupling strength increases in the normal region, the amplitude of equal-spin CAR increases while the amplitude of electron elastic cotunneling (EC) decreases, resulting in equal-spin CAR-dominant nonlocal transport. In the antiparallel configuration, a CAR-dominant nonlocal transport is observed at low Rashba spin-orbital coupling strength, with the conventional CAR process being finite. Furthermore, our results indicate that increasing the staggered sublattice potential enhances the conventional CAR in the parallel configuration, and conversely, in the antiparallel configuration at high Rashba spin-orbital coupling strength, it reduces CAR dominance in favor of EC processes. Therefore, by adjusting the Rashba spin-orbital coupling strength and staggered sublattice potential, CAR-dominant nonlocal transport can be achieved in both the parallel and antiparallel configurations.

Design of spintronic devices based on adjustable half-metallicity induced by electric field in A-type antiferromagnetic bilayer NiI2

Exploring the attainment of half-metallic behavior in two-dimensional (2D) materials through external perturbations is a popular area of current research. In this work, we demonstrate, using first-principles calculations, that bilayer NiI2 (bi-NiI2) is an A-type antiferromagnetic (AFM) semiconductor with an indirect bandgap of 0.86 eV, with the most stable configuration being the AB stacking mode. Upon the application of a vertical electric field, the material transforms from its original semiconducting state into a half-metallic state. Moreover, the spin polarization reverses its orientation whenever the direction of the electric field is altered. This intriguing behavior has inspired us to design a spintronic device based on the A-type AFM bi-NiI2. By employing nonequilibrium Green's function (NEGF) combined with density functional theory (DFT) calculations, we find that the device achieves ON/OFF switching by applying vertical electric fields in parallel or anti-parallel configurations in the two leads. The device displays 100 % spin polarization in the parallel configuration (PC) scenario, driven by bias voltage or temperature differences. Utilizing either the parallel or antiparallel configuration (APC) for ON/OFF switching enables the device to exhibit tunneling magnetoresistance (TMR) of up to 1.45 × 1010 % due to bias voltage and up to 1011 % thermal TMR arising from temperature differences between the leads. These findings highlight the potential of NiI2 and A-type AFM bilayers in the design of spintronic devices.

Conductance, spin and valley polarizations through 8-Pmmn borophene magnetic barriers

Conductance, spin and valley polarizations through 8-Pmmn borophene barriers in the presence of external Rashba spin–orbit interaction (RSOI) and magnetic field are investigated theoretically. The spin-dependent conductance shows a strong dependence on the direction of the 8-Pmmn borophene barriers, the strength of RSOI and value of the magnetic field strength. For two barriers unlike to one barrier, the spin-dependent conductance exhibits a prominent oscillatory behavior. For the parallel configuration, the dependence of conductance on the magnetic field is more than for the antiparallel configuration. Transmission probability without and with spin rotation decreases drastically with the increase in the value of the magnetic field, so that for sufficiently large magnetic fields, the transmission probability is zero for most electron incidence angles. The size and direction of the spin and valley polarization can be tuned by the strength of RSOI, direction of the 8-Pmmn borophene barriers, size of the magnetic field and type of parallel or antiparallel configuration. In certain conditions, full valley polarization can be achieved in the proposed structure.

Conformational Dynamics and Molecular Characterization of Alsin MORN Monomer and Dimeric Assemblies.

Despite the ubiquity of membrane occupation recognition nexus (MORN) motifs across diverse species in both eukaryotic and prokaryotic organisms, these protein domains remain poorly characterized. Their significance is underscored in the context of the Alsin protein, implicated in the debilitating condition known as infantile-onset ascending hereditary spastic paralysis (IAHSP). Recent investigations have proposed that mutations within the Alsin MORN domain disrupt proper protein assembly, precluding the formation of the requisite tetrameric configuration essential for the protein's inherent biological activity. However, a comprehensive understanding of the relationship between the biological functions of Alsin and its three-dimensional molecular structure is hindered by the lack of available experimental structures. In this study, we employed and compared several protein structure prediction algorithms to identify a three-dimensional structure for the putative MORN of Alsin. Furthermore, inspired by experimental pieces of evidence from previous studies, we employed the developed models to predict and investigate two homo-dimeric assemblies, characterizing their stability. This study's insights into the three-dimensional structure of the Alsin MORN domain and the stability dynamics of its homo-dimeric assemblies suggest an antiparallel linear configuration stabilized by a noncovalent interaction network.

High polarization sensitivity passive spin Photogalvanic devices based on 2D perovskite CsMnBr4/CsSbCl3Br/CsMnBr4 heterojunction

In recent years, Dion-Jacobson (D-J) perovskite has been extensively studied. In order to further study the application of D-J perovskite materials in spin-optoelectronic multifunctional devices, this paper is based on CsSbCl3Br and CsMnBr4, a zero-band gap semi-metallic material with the same ferromagnetic ground state and the same crystal structure. In this paper, put forward with transverse CsMnBr4/CsSbCl3Br/CsMnBr4 heterojunction optoelectronic devices. The characteristics of photocurrent are discussed using parallel configuration (PC) and anti-parallel configuration (APC) magnetoelectric poles under two conditions: vertical incidence of linearly polarized light and elliptically polarized light utilizing density functional theory and the non-equilibrium Green’s function method. The results reveal that the device can achieve complete spin polarization photocurrent, pure spin current, perfect spin filtering effect, and excellent spin valve effect, with high extinction ratios. Under linearly polarized light, the maximum extinction ratio reaches 2747 for the PC configuration and 5200 for the APC configuration. For elliptically polarized light, the extinction ratio is 739 for the PC configuration and reaches a maximum of 240 for the APC configuration. These results indicate that the lateral CsMnBr4/CsSbCl3Br/CsMnBr4 heterojunction has broad multi-functional application prospects in the field of optoelectronics and spintronics.

Orientation-dependent Andreev reflection in an altermagnet/altermagnet/superconductor junction

Altermagnets, an emerging class of magnetic materials distinguished by a significant non-relativistic spin splitting band structure but zero net macroscopic magnetization, have recently received considerable attention. Here, we present a theoretical study focusing on the orientation-dependent conductance induced by Andreev reflection (AR) at an altermagnet/altermagnet/superconductor junction. Conventional and equal-spin AR processes occur when the Néel vector directions of the AMs are non-collinear and controllable by the altermagnet’s orientation θ and Néel vector direction α. The conductance spectra resemble ferromagnet/ferromagnet/superconductor junctions with parallel or antiparallel magnetization configurations, depending on θ and α. Both the anisotropic altermagnetic state and the equal-spin AR signature can be probed by studying conductance spectra. These findings suggest that altermagnet/superconductor junctions are promising platforms for future superconducting spintronics applications.

Theoretical Study for Spin Transport properties of FM-(G/C)10- FM

In the present study, we propose a physical model to study spin transport through DNA system and provide apparent physical mechanism for spin dependent phenomenon. The system considered in our work is DNA bases guanine-cytosine coupled to two ferromagnetic leads (FM-(G/C)10-FM) in parallel and anti-parallel configuration case, throughout magnetic quantum contacts. Our treatment is based on the tight binding model to derive obvious formula for the transmission spectrum which is employed to investigate the spin dependent current-bias voltage characteristics and the temperature - Conductance dependence. Our calculations of for strong, weak and without backbone regimes. Various factors are involved in our -study. These are the electrical contacts between DNA molecules and electrodes, the structure of DNA molecule and the environment around DNA molecule. The system spin dependent factors, that are investigated extensively in our study include the spin dependent coupling between subsystems, the quantum contacts between active region and electrodes, majority and minority electrons spin in the ferromagnetic leads as well as externally applied bias voltage. Variation of these factors can enhanced or suppressed spin transport through (G/C)10 molecule. The transmission spectrum calculations conform that the spin transport throughout (G/C)10 originates by a coherent tunneling process between neighboring bases through the overlapping of the LUMO orbitals of the bases. Our results showed that the spin-polarized transport that can be effectively regulated by the type of regime as well as the spin configuration in the leads which can exhibit efficient spin filtering and spin switching by employing the spin blockade phenomenon

Lateral spin filter realized by monolayer Fe3GaTe2 and Fe3GaTe2/Graphene van der Waals heterostructures

Motivated by the lately discovered van der Waals ferromagnet Fe3GaTe2, a two-dimensional material with magnetic order and large perpendicular magnetic anisotropy above room temperature, we investigate two kinds of spin filters based on it. One is a flat pure Fe3GaTe2 monolayer and the other is a sandwich structure where the left and right parts are connected by a side-contacting graphene nanoribbon; both structures can be set in magnetic parallel or antiparallel configuration by external fields. Our first-principle calculation shows that the flat structure has large magnetoresistance (∼640 %) but relatively low spin filter efficiency (<50 %) at equilibrium, while the side-contacting structure shows a great enhancement in spin filter efficiency along with a relatively small magnetoresistance. Spin filter efficiency refers to the degree of spin polarization of the current passing through the device. For both structures, parallel configuration turns out to render a better filter than antiparallel configuration at equilibrium while the difference can be suppressed by applying a finite bias voltage. For side-contacting structure, different hybridization in different spins leads to very large spin filter efficiency (∼95.2 %) at equilibrium in parallel configuration, which may have a great potential in the application of future spintronics.

Electric field control of 180° magnetization reversal in a spin-valve multiferroic heterostructure

Electrical tuning of magnetism, rather than a spin current or magnetic field, has attracted much attention due to its great potential for designing energy-efficient spintronic devices. However, pure electric field (E-field) control of 180° magnetization reversal is still challenging. Thus, we report an E-field-controlled 180° magnetization reversal in a spin valve (SV)/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) multiferroic heterostructure. Via the converse magnetoelectric coupling effect in CoFe/PMN-PT heterostructures, the magnetic anisotropy and coercive field of the CoFe film can be tremendously modulated by an E-field. We fabricated an optimized SV grown on the PMN-PT substrate, in which the magnetic moments of the free and pinned layers are parallel to each other at the initial state. By applying an E-field, the coercive field of the free layer was enhanced, exhibiting an antiparallel configuration between the free and pinned layers. Based on the theoretical and experimental results, a complete 180° magnetization reversal of the free layer can be obtained without a magnetic field. Accordingly, an E-field-controlled giant, reversible and repeatable magnetoresistance modulation can be achieved. This work proposes a feasible strategy to achieve E-field-controlled 180° magnetization reversal, which is critical for exploring ultralow power consumption magnetic memory devices.

Optoelectronically controlled transistor and magnetoresistance effect in an antiferromagnetic graphene-based junction

We investigate the optoelectronic spin and spin-valley transports and magnetoresistance (MR) effect in a graphene-based junction. The results show that by modulating the direction of an electric field, the off state and the on state with fully spin-polarized currents can be realized for both parallel (P) and antiparallel (AP) magnetization configurations, because the spin-polarized directions between two antiferromagnetic (AFM) regions are opposite and consistent, respectively. Moreover, when the off-resonant circularly polarized (ORCP) light is further radiated on two AFM regions, pure spin current can be further switched into four types of fully spin-valley-polarized currents, which results in an optoelectronically controlled transistor. In particular, the conductances in the P and AP magnetization configurations are either equal or dramatically different, so the optically and electrically controlled MR effect is naturally formed that can be switched from 0 to 1. Our results suggest that graphene has a very promising potential for applications in spintronics and spin-valleytronics.

Ultrahigh tunneling magnetoresistance ratios in the sandwich-structured full MXene Cr2NO2/Ti2CO2/Cr2NO2 van der Waals heterojunction

In this study, the structure, magnetism, energy-band, and spin-dependent electron transport properties of the Cr2NO2/Ti2CO2/Cr2NO2 magnetic tunnel junction (MTJ) were investigated using a combination of density functional theory and non-equilibrium Green’s function methods. The calculation band structures indicate that Cr2NO2 MXene is an “ideal” half-metal with a magnetic moment of 5.00 μB. Ti2CO2 MXene is an indirect band-gap semiconductor, and the Cr2NO2/Ti2CO2-stacked heterojunction reserve 100 % spin polarization because of the weak Van der Waals interface interaction. For the equilibrium state of the most stable Cr2NO2/Ti2CO2/Cr2NO2 MTJ, the total transmission coefficient for parallel configuration is about eleven orders of magnitude larger than that for anti-parallel configuration. An ultrahigh tunneling magnetoresistance (TMR) ratio of 1.92×1013% can be detected. For the non-equilibrium state, our calculation results show that the Cr2NO2/Ti2CO2/Cr2NO2 MTJ has a good transport performance when bias voltage ranges from 0 V to 0.1 V. The minimum TMR ratio of 7.51×1012% is detected at the bias voltage of 0.09 V, which can be considered as an excellent TMR ratio. Therefore, the Cr2NO2/Ti2CO2/Cr2NO2 MTJ is an excellent candidate for spintronic device application.

Superconducting spin valve effect in Co/Pb/Co heterostructures with insulating interlayers.

We report the superconducting properties of Co/Pb/Co heterostructures with thin insulating interlayers. The main specific feature of these structures is the intentional oxidation of both superconductor/ferromagnet (S/F) interfaces. We study the variation of the critical temperature of our systems due to switching between parallel and antiparallel configurations of the magnetizations of the two magnetic layers. Common knowledge suggests that this spin valve effect, which is due to the S/F proximity effect, is most pronounced in the case of perfect metallic contacts at the interfaces. Nevertheless, in our structures with intentionally deteriorated interfaces, we observed a significant full spin valve effect. A shift of the superconducting transition temperature Tc by switching the mutual orientation of the magnetizations of the two ferromagnetic Co layers from antiparallel to parallel amounted to ΔTc = 0.2 K at the optimal thickness of the superconducting Pb layer. Our findings verify the so far unconfirmed earlier results by Deutscher and Meunier on an F1/S/F2 heterostructure with oxidized interlayers [Deutscher, G.; Meunier, F. Phys. Rev. Lett. 1969, 22, 395. https://doi.org/10.1103/PhysRevLett.22.395] and suggest an alternative route to optimize the performance of superconducting spin valves.

Exploring stable half-metallicity and magnetism of Cr-based double half-Heusler alloys and its high magnetoresistance ratio in magnetic tunnel junction

A new series of double half-Heusler (DHH) alloy Cr2FeCoZ2 (Z = As, Ge, S, P) are investigated by using the non-equilibrium Green's function in combination with the first-principles calculations. The calculations on magnetism reveal that these Cr-based DHH alloys are ferrimagnets due to the antiparallel magnetic coupling between Cr and Fe (Co). The electronic structure calculations of the Cr-based DHH alloys reveal half-metallicity, and Cr2FeCoAs2 possesses the largest spin-down gap of 1.181 eV. Within the c/a ranges from 1.60 to 2.52, Cr2FeCoAs2 maintains its 100 % spin-polarization, and the changes in total and spin-resovled atomic magnetic moment are negligible, showing a stable half metallicity and magnetism against the tetragonal distortion. Futhermore, the transport properties are investigated by constructing the Cr2FeCoZ2/GaAs/Cr2FeCoZ2 magnetic tunnel junction (MTJ) model. By changing the magnetic arrangement of the left and right electrodes into antiparallel configuration, the capability of transportation in both spin channels is significantly limited. Conversely, by modulating the magnetic arrangement of the left and right electrodes into parallel configuration, the transportation of electrons in spin-up channel is exceptionally strong while that of the spin-down channel is severely impeded. The Cr2FeCoAs2/GaAs/Cr2FeCoAs2 MTJ owns the highest tunneling magnetoresistance (TMR) ratio of ∼7.42 × 108 %, indicating that Cr2FeCoAs2 is the most promising candidate for high performance spintronic devices.

Mitotic spindle positioning protein (MISP) preferentially binds to aged F-actin

Actin bundling proteins crosslink filaments into polarized structures that shape and support membrane protrusions including filopodia, microvilli, and stereocilia. In the case of epithelial microvilli, mitotic spindle positioning protein (MISP) is an actin bundler that localizes specifically to the basal rootlets, where the pointed ends of core bundle filaments converge. Previous studies established that MISP is prevented from binding more distal segments of the core bundle by competition with other actin-binding proteins. Yet whether MISP holds a preference for binding directly to rootlet actin remains an open question. By immunostaining native intestinal tissue sections, we found that microvillar rootlets are decorated with the severing protein, cofilin, suggesting high levels of ADP-actin in these structures. Using total internal reflection fluorescence microscopy assays, we also found that purified MISP exhibits a binding preference for ADP- versus ADP-Pi-actin-containing filaments. Consistent with this, assays with actively growing actin filaments revealed that MISP binds at or near their pointed ends. Moreover, although substrate attached MISP assembles filament bundles in parallel and antiparallel configurations, in solution MISP assembles parallel bundles consisting of multiple filaments exhibiting uniform polarity. These discoveries highlight nucleotide state sensing as a mechanism for sorting actin bundlers along filaments and driving their accumulation near filament ends. Such localized binding might drive parallel bundle formation and/or locally modulate bundle mechanical properties in microvilli and related protrusions.

The spin transport properties of Ni(111)/SnSe/Ni(111) lateral tunnel junction

Spin-resolved transport properties of the armchair-edged SnSe lateral contact with two magnetic Ni(111) leads are investigated by density functional theory combined with nonequilibrium Green's function method. The spin-polarized currents, magnetoresistances and k-resolved transmission spectrums are simulated in spin parallel and antiparallel configurations. It is found that the heterostructure exhibits a stable spin injection efficiency which can reach up to 80% at low bias range in spin parallel configuration, suggesting the large spin-diffusion length of SnSe. The magnetoresistance can be maintained stably at about 40% at a wide bias range. These results make SnSe material possible to be used in spintronic devices.

Programming the Assembly of Oligo-Adenine with Coralyne into a pH-Responsive DNA Hydrogel.

External stimuli-responsive DNA hydrogels present interesting platforms for drug loading and triggered release. Typically, drug molecules are encapsulated within three-dimensionally hybridized DNA networks. However, the utilization of drug molecules as cofactors to facilitate the directed assembly of DNA strands into hydrogel frameworks and their subsequent controlled release remains to be explored. Herein, we introduce the guided assembly of oligo-adenine (A-strand) into an acidic pH-responsive DNA hydrogel using an anticancer drug, coralyne (COR), as a low-molecular-weight cofactor. At pH 7, COR orchestrates the assembly of A-strand into an antiparallel duplex configuration cross-linked by A-COR-A units at a stoichiometric ratio of one COR cofactor per four adenine bases, resulting in a DNA hydrogel characterized by A-COR-A duplex bridges. At pH 4-5, the instability of A-COR-A units results in the disintegration of the duplex into its constituent components, leading to the release of COR and simultaneous dissociation of the DNA hydrogel matrix. This study introduces a method by which drug molecules, exemplified here by COR, facilitate the direct formation of a supramolecular cofactor-DNA complex, subsequently leading to the creation of a stimuli-responsive DNA hydrogel. This approach may inspire future investigations into DNA hydrogels tailored for controlled drug encapsulation and release applications.

Gap engineering effects on transport and tunneling magnetoresistance properties in phosphorene ferromagnetic/normal/ferromagnetic junction

Tuning the band gap is of utmost importance for the practicality of two-dimensional materials in the semiconductor industry. In this study, we investigate the ballistic transport and the tunneling magnetoresistance (TMR) properties within a modulated gap in a ferromagnetic/normal/ferromagnetic (F/N/F) phosphorene junction. The theoretical framework is established on a Dirac-like Hamiltonian, the transfer matrix method, and the Landauer–Büttiker formalism to characterize electron behavior and obtain transmittance, conductance and TMR. Our results reveal that a reduction in gap energy leads to an enhancement of conductance for both parallel and anti-parallel magnetization configurations. In contrast, a significant reduction and redshift in TMR have been observed. Notably, the application of an electrostatic field in a gapless phosphorene F/N/F junction induces a blueshift and a slight increase in TMR. Furthermore, we found that introducing an asymmetrically applied electrostatic field in this gapless junction results in a significant reduction and redshift in TMR. Additionally, intensifying the applied magnetic field leads to a substantial increase in TMR. These findings could be useful for designing and implementing practical applications that require precise control over the TMR properties of a phosphorene F/N/F junction with a modulated gap.

A CrO₂ and Out-of-Plane Silicene based Sub-10nm MTJ with perfect spin filtering efficiency and high tunnel magnetoresistance

In this paper, properties of spin transport for MTJs (magnetic tunnel junction) consisting of CrO2 Half Metallic Ferromagnetic (HMF) electrodes with out of plane silicene sheet as scattering region are analyzed. The transport phenomena in the proposed structure are purely tunneling due to the absence of transmission states near the Fermi level. This is contrary to the in plane structures where transmission states exist near the Fermi level. The proposed device shows the highest value (100%) of magneto-resistance. Spin-filtering efficiency reported in out-of-plane silicene-based MTJ is also increased because of silicene acting as a perfect barrier, results in feeble spin down current in both parallel and anti-parallel configurations. The proposed device has dimensions below 10-nm. Due to the use of silicene sheet as a scattering region, it is also likely to integrate well with the already existing silicon technology. It can be used for high-performance memory applications similar to MRAMs.

Chemical-physical parameters and microbial community changes induced by electrodes polarization inhibit PCB dechlorination in a marine sediment

Microbial reductive dechlorination of organohalogenated pollutants is often limited by the scarcity of electron donors, that can be overcome with microbial electrochemical technologies (METs). In this study, polarized electrodes buried in marine sediment microcosms were investigated to stimulate PCB reductive dechlorination under potentiostatic (−0.7 V vs Ag/AgCl) and galvanostatic conditions (0.025 mA·cm−2-0.05 mA·cm−2), using graphite rod as cathode and iron plate as sacrificial anode. A single circuit and a novel two antiparallel circuits configuration (2AP) were investigated. Single circuit polarization impacted the sediment pH and redox potential (ORP) proportionally to the intensity of the electrical input and inhibited PCB reductive dechlorination. The effects on the sediment’s pH and ORP, along with the inhibition of PCB reductive dechlorination, were mitigated in the 2AP system. Electrodes polarization stimulated sulfate-reduction and promoted the enrichment of bacterial clades potentially involved in sulfate-reduction as well as in sulfur oxidation. This suggested the electrons provided were consumed by competitors of organohalide respiring bacteria and specifically sequestered by sulfur cycling, which may represent the main factor limiting the applicability of METs for stimulating PCB reductive dechlorination in marine sediments.

Field-effect transistor and giant magnetoresistance effect based on optically induced antichiral edge state in graphene

We propose a peculiar method to induce the antichiral edge state (AES) based on off-resonant circularly polarized (ORCP) light and further study its edge-state transitions and transport properties in zigzag graphene nanoribbon. The results show that the vertical irradiation of the ORCP light on two boundaries of the system could be regarded as a modified Haldane model for inducing the AES. In particular, under the antiferromagnetic (AFM) exchange field, the system with the AES can be controlled by an electric field between spin-polarized (SP) AESs and band insulators. As a result, a SPAES/AES/SPAES junction can be formed. In two SPAES regions, the spin orientation of the SPAES can be modulated by an electric field, giving rise to the switch between the on state with enhanced conductance contributed by two edge channels and a bulk channel, and the off state. Furthermore, by modulating the AFM exchange field in two SPAES regions as parallel and antiparallel configurations, the corresponding conductance is significantly different due to the different spin directions of the AES, finally leading to giant magnetoresistance effect that can be cut off and tuned on by an electric field. In addition, the transport properties based on the AESs are moderately robust against the disorder. These findings provide a view to study the peculiar AESs and are expected to be applied in electronic devices based on the AESs.