High polarization sensitivity passive spin Photogalvanic devices based on 2D perovskite CsMnBr4/CsSbCl3Br/CsMnBr4 heterojunction

Abstract

In recent years, Dion-Jacobson (D-J) perovskite has been extensively studied. In order to further study the application of D-J perovskite materials in spin-optoelectronic multifunctional devices, this paper is based on CsSbCl3Br and CsMnBr4, a zero-band gap semi-metallic material with the same ferromagnetic ground state and the same crystal structure. In this paper, put forward with transverse CsMnBr4/CsSbCl3Br/CsMnBr4 heterojunction optoelectronic devices. The characteristics of photocurrent are discussed using parallel configuration (PC) and anti-parallel configuration (APC) magnetoelectric poles under two conditions: vertical incidence of linearly polarized light and elliptically polarized light utilizing density functional theory and the non-equilibrium Green’s function method. The results reveal that the device can achieve complete spin polarization photocurrent, pure spin current, perfect spin filtering effect, and excellent spin valve effect, with high extinction ratios. Under linearly polarized light, the maximum extinction ratio reaches 2747 for the PC configuration and 5200 for the APC configuration. For elliptically polarized light, the extinction ratio is 739 for the PC configuration and reaches a maximum of 240 for the APC configuration. These results indicate that the lateral CsMnBr4/CsSbCl3Br/CsMnBr4 heterojunction has broad multi-functional application prospects in the field of optoelectronics and spintronics.