Analysis Of Electrical Characteristics Research Articles

Electrical Characteristic Analysis According to Contact Resistance Between Turns of HTS Coil

This paper presents our analysis of the output characteristics of a high-temperature superconductor (HTS) coil depending on the turn-to-turn contact resistance. Important design factors were investigated by taking into account the turn-to-turn contact resistance based on the analysis results. Analyses were performed on five self-fabricated coil models with different turn-to-turn contact resistances. To consider only the turn-to-turn contact resistance, we used a first-generation HTS BSCCO wire with simpler architecture and mechanical properties than the second-generation HTS wire. From this study, it was confirmed by experiment that as the turn-to-turn contact resistance decreases, the electrical stability increases but the output efficiency decreases compared with the input.

플로팅 아일랜드 구조의 전력 MOSFET의 전기적 특성 분석

플로팅 아일랜드 구조의 전력 MOSFET의 전기적 특성 분석

A Study on the Arc Detection Algorithm via Analysis of the Arc's Electric Characteristics

A Study on the Arc Detection Algorithm via Analysis of the Arc's Electric Characteristics

Modeling of Noise Power Spectral Density Analysis for GaN/AlGaN HEMT

Nano Technology is the branch of technology that deals with dimensions and tolerances in terms of nanometers. In this paper, the electrical characteristics analysis is determined for the Nano-GaN HEMT and Micro-GaN HEMT and also power spectrum density is determined for GaN Nano-HEMT by reducing the gate length Lg in nm range. The GaN Nano HEMT is producing high current comparing to Micro GaN HEMT. Accuracy of the proposed analytical model results is verified with simulation results.

Simulation and Finite Element Analysis of Electrical Characteristics of Gate-all-Around Junctionless Nanowire Transistors

Gate all around nanowire transistors is one of the widely researched semiconductor devices, which has shown possibility of further miniaturization of semiconductor devices. This structure promises better current controllability and also lowers power consumption. In this paper, Silicon and Indium Antimonide based nanowire transistors have been designed and simulated using Multiphysics simulation software to investigate on its electrical properties. Simulations have been carried out to study band bending, drain current and current density inside the device for changing gate voltages. Further analytical model of the device is developed to explain the physical mechanism behind the operation of the device to support the simulation result.

PREDICTION OF LI-ION BATTERY DISCHARGE CHARACTERISTICS AT DIFFERENT TEMPERATURES AND DISCHARGE RATES BASED ON A HYBRID SOC ESTIMATION APPROACH

State of charge (SOC) is an important battery parameter which provides a good indication of the useful capacity that can be derived out of a battery system at any given point of time. Li-ion has become state of the art technology for commercial and aerospace applications due to the various advantages that they offer. For spacecrafts requiring long lifetime, SOC estimation is crucial for on-orbit as well as offline data analysis. On-orbit estimation of SOC should be carefully addressed, as this provides information on survivability of battery and also serves as input to Battery Management System (BMS). In addition, detailed offline data analysis of battery electrical characteristics, which indicate the SOC-Voltage relationship is important to assess the performance of the battery under various mission scenarios at both Beginning of life (BOL) and End of Life (EOL) of a spacecraft system. In this work, a hybrid SOC estimation method, incorporating coulomb counting and Unscented Kalman Filter (UKF) is used, to predict the BOL discharge behaviour of an 18650 commercial Li-ion cell at different temperatures and discharge rates. The experimental results are encouraging and the approach gives a prediction error of less than 10%. The study will serve as basis for life assessment of Li-ion cells and batteries used for GEO and LEO missions.

Micro‐electro‐mechanical systems capacitive ultrasonic transducer with a higher electromechanical coupling coefficient

Since the proposing of capacitive micromachined ultrasonic transducer by Khuri Yakub group in 1994 that this kind of transducer occupying the advantages of wide bandwidth, impedance matching well with the propagation medium especially in fluid and air and high sensitivity, has shown a great potential for wide ranges of applications. This Letter reports kind of micro-electro-mechanical systems (MEMS) capacitive ultrasonic transducer with the novel cavities embedded in the device layer of silicon on insulator wafer bonded with a glass substrate. The optimum geometric dimensions are confirmed by both mechanical vibrating of the membrane and the electrical characteristics analysis. Finite-element analysis is adopted to determine the operation mode. The safety and reliability of the proposed device is ensured by the obtained deflections and equivalent stress under operation/collapse voltage. The bottom electrodes of the proposed transducer are fabricated on the top surface of the glass substrate. The parallel parasitic capacitance is reduced, thus improving the electromechanical coupling coefficient. The test results show that the electromechanical coupling coefficient is 69.65%, which demonstrates that this proposed MEMS capacitive ultrasonic transducer structure can enhance the performance significantly.

Analysis of Electrical Characteristics of Oxide Semiconductor of ZnO, SnO2 and ZTO

【To study the characteristics of ZTO, which is made using a target mixed $ZnO:SnO_2=1:1$ , the ZnO and $SnO_2$ were analyzed using PL, XRD patterns, and electrical properties. Resulting characteristics were compared with the electrical characteristics of ZnO, $SnO_2$ , and ZTO. The electrical characteristics of ZTO were found to improve with increasing of the annealing temperature due to the high degree of crystal structures at high temperature. The crystal structure of $SnO_2$ was also found to increase with increasing temperatures. So, the structure of ZTO was found to be affected by the annealing temperature and the molecules of $SnO_2$ ; the optical property of ZTO was similar to that of ZnO. Among the ZTO films, ZTO annealed at the highest temperature showed the highest capacitance and Schottky contact.】

Evaluation of Electrical and Thermal Properties of Stacked YBCO Coated Conductors for Current Lead Application

This paper deals with the electrical and thermal characteristics analysis of stacked coated conductors (CCs) for current lead application. A test sample is fabricated using YBCO CCs with a stainless steel laminated stabilizer and has a heater made of the Ni-Cr wire to generate external heat disturbance. In order to evaluate a thermal stability behavior, minimum quench energy, voltage, and temperature trace are measured as a function of operating current. To verify thermal behavior in stacked CCs, numerical analysis on temperature trace is carried out using the finite-element method. The numerical simulation results are compared with the experimental data to check the validity of the simulation model.

Analysis of Quantized Electrical Characteristics of Microscale TiO<sub>2</sub> Ink-Jet Printed Memristor

We demonstrate the ink-jet printed fabrication technique for TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based memristor, followed by detailed analysis of electrical characteristics and development of a new model that considers observed phenomena of quantized conductance steps. The existence of pinched hysteretic current-voltage characteristics is evidence of memristive behavior, provided by the reversible atomic rearrangement taking place in the functional layer. For the first time, performed electrical measurement on the micrometer thickness devices based on TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> active layer has captured the plateaux steps of the conductance at integer multiples of elementary quantum conductance. This behavior is consistent with the assumption that transport from electrode to electrode emerges through confined paths of conductive filaments with radius in the nanometer size range. Moreover, we introduce a novel model, based on the diffusion equation for ballistic transport in memristive devices, which considers the conductance plateaux steps.

Characterization of interface defects in BiFeO3 metal–oxide–semiconductor capacitors deposited by radio frequency magnetron sputtering

In this work, we study the structural and electrical properties of BiFeO3 MOS capacitors with a special focus on the oxide–semiconductor interface for gate dielectric applications. For this purpose BiFeO3 thin films with a thickness of 300 nm were deposited on p-type Si (100) substrates at 0 °C by RF sputtering. Half of the films were annealed at 550 °C for 30 min in atmospheric environment while the other half were kept as-deposited. XRD and SEM measurements were performed for both samples for structural characterization. MOS capacitors were fabricated by evaporation technique using Al from samples. For electrical characterizations of MOS capacitors, capacitance–voltage (C–V), conductance–frequency (Gp/ω–F) and leakage current density–voltage (J–V) measurements were performed. The XRD analyses show that BiFeO3 thin films are polycrystalline with some impurity phases, which influence the electronic device properties. The formation of crystallization is confirmed by SEM measurements. Debye length, barrier height and flat band voltages showed variations due to the frequency dependent charges, partially originating from interface defects, in the device structure. Therefore ignoring effects of frequency dependent charges can lead to significant errors in the analysis of electrical characteristics of MOS capacitors. Moreover, the obtained results from analyses of C–V, Gp/ω–F and J–V characteristics of annealed samples depict that all measured and calculated parameters are of the same order for novel MOS devices. Hence, the BiFeO3 dielectric layer in fabricated MOS devices exhibits a stable insulation property for gate dielectric applications.

An analysis of electrical and optical characteristics of a type II superlattice for optical switching applications

The present work demonstrates an analysis of electronic and optical characteristics of InAs/GaSbType II superlattice based photodetectors. The electronic characteristics are analyzed by developing a model of the Type II superlattice. The 8 band k.p method is implemented to deduce the wavefunctions. The effects of temperature on zero-bias resistance- area product (R0A) are also included in the model. The newly proposed M-Structure design method is also implemented for our model. Electrical and optical properties of the material such as dark current density and absorption coefficient are calculated. At 50mV reverse bias, the dark current density is found equal to 1.5×10-4 A/cm2. These calculations are done based on the approximation based models of reflectivity. These results were used to demonstrate the variation of optical properties with applied bias voltage to be used as a novel optical switching technique in WDM based communication networks.

Electrical Modeling and Characterization of Shield Differential Through-Silicon Vias

An equivalent-circuit model of shield differential through-silicon vias (SDTSVs) in 3-D integrated circuits (3-D ICs) is proposed in this paper. The proposed model is verified using the 3-D full-wave field solver High Frequency Simulator Structure, showing that it is highly accurate up to 100 GHz. Furthermore, a full-wave extraction method for the resistance–inductance–capacitance–conductance (RLCG) parameters of SDTSVs is also proposed in this paper, which can be applied to all of differential transmission lines. It is shown that the results of the RLCG parameters obtained from the full-wave extraction method agree well with that from the analytical calculation up to 100 GHz, further validating the accuracy of the proposed model. Finally, using the proposed model, a deep analysis of electrical characteristics of SDTSVs is carried out to provide helpful design guidelines for them in future 3-D ICs.

Dark Conductivity in Semi-Insulating Crystals of CdTe:Sn

We prepared semi-insulating CdTe for radiation detectors by isothermal annealing of single crystals grown by Bridgeman technique in a sealed quartz container filled with Sn vapor. The resistivity of CdTe:Sn samples thus obtained was of order of 10SUP10/SUP Ohm·cm at room temperature with electrons lifetime of 2´10SUP-8/SUP s, which is appropriate for the applications desired. Analysis of electric transport characteristics depending on temperature, sample thickness and voltage applied revealed the presence of traps with concentration of about (4-5)´10SUP12/SUP cmSUP-3/SUP with the corresponding energy level at 0.8 ? 0.9 eV counted from the bottom of conduction band. The conductivity was determined by electron injection from electrodes in space charge limited current mode.

ChemInform Abstract: Rhodium‐Catalyzed Transfer Hydrogenation with Aminophosphines and Analysis of Electrical Characteristics of Rhodium(I) Complex/n‐Si Heterojunctions.

AbstractThe shown catalyst gives excellent conversions and shows the highest turnover frequencies.

ZnO Gate Based MOSFETs for Sensor Applications

A metal–oxide–semiconductor field-effect transistor (MOSFET) with transparent ZnO as its gate metal was fabricated and its photodetecting capabilities were investigated. For the fabrication of the MOSFET, a four level mask was used. The first level was used for making the diffusion wells for source and drain. The second level to form the via holes for Aluminum deposition followed by the third level to shape the source and drain contact structures. Finally the fourth level mask to pattern the ZnO gate metal. The ZnO gate metal was deposited by sputtering process. The electrical characteristic analysis was performed on the fabricated MOSFETs when different types of light were incident on it.

A comparative study of SELBOX-JLT and SOI-JLT

Analysis of thermal and electrical characteristics of the proposed device, selective buried oxide junctionless transistor (SELBOX-JLT) along with its analog performance, is compared with silicon on insulator junctionless transistor (SOI-JLT). The proposed device shows better thermal efficiency. The maximum device temperature of SELBOX-JLT is 311 K, much less than that of SOI-JLT (445 K). The proposed device has almost no effect of self-heating on output characteristics. SELBOX-JLT exhibits better ION/IOFF ratio, subthreshold slope, and drain-induced barrier lowering as compared to SOI-JLT for the same channel length. The analog performance parameters as transconductance (Gm), transconductance/drain current ratio (Gm/ID), drain conductance (GD), output resistance (R0), intrinsic gain (GmR0), and unity-gain frequency (fT) of the proposed device are found to be better than SOI-JLT.

Analysis of Electrical Characteristics of Metal-Oxide-Semiconductor Capacitor by Impedance Spectroscopy

Analysis of Electrical Characteristics of Metal-Oxide-Semiconductor Capacitor by Impedance Spectroscopy

A simulation of Pd-doped SWCNTs used to detect SF 6 decomposition components under partial discharge

Carbon-nanotube doping is extensively researched. This work aims to investigate a novel sensor for detecting the five gas components of SF6 decomposition (i.e., SO2, H2S, SOF2, SO2F2, and CF4) using Pd-doped zigzag (8, 0) single-wall carbon nanotubes (Pd-SWCNTs). We compute the preferential adsorption sites, bonding configurations, and adsorption geometry for molecular adsorption. Results of electrical characteristics analysis reveal that Pd-SWCNTs show different responses to the five gases. After SO2, H2S, and SOF2 adsorbed onto Pd-SWCNTs, the conductivity of Pd-SWCNTs increases in the following order: SO2 > SOF2 > H2S. SO2F2 adsorption onto Pd-SWCNTs slightly decreases conductivity. Conversely, Pd-SWCNTs are not sensitive to the other gas molecule CF4. We conclude that Pd-SWCNTs have good sensitivity and selectivity to SO2, H2S, SOF2, SO2F2, and CF4.

Analysis of the thickness-dependent electrical characteristics in pentacene field-effect devices

n this paper, we report on the important relationship among the capacitance-voltage (C — V ) characteristics of metal-insulator-semiconductor (MIS) capacitors, the output currents of pentacene-based organic field-effect transistors (OFETs), and the semiconductor layer’s thickness. The effect of the semiconductor layer’s thickness on the effective channel capacitance, when the MIS capacitors are fully accumulated with sufficient negative bias, was observed to be directly correlated with the magnitude of the saturated output current. The variation in accumulation capacitance of MIS capacitors due to changes in layer thickness is shown to indicate the existence of a channel capacitance. This determines the output currents in the saturation region. Furthermore, the accumulation capacitance appears to decrease notably when the thickness of the pentacene layer is reduced below 20 nm.