Abstract
We prepared semi-insulating CdTe for radiation detectors by isothermal annealing of single crystals grown by Bridgeman technique in a sealed quartz container filled with Sn vapor. The resistivity of CdTe:Sn samples thus obtained was of order of 10SUP10/SUP Ohm·cm at room temperature with electrons lifetime of 2´10SUP-8/SUP s, which is appropriate for the applications desired. Analysis of electric transport characteristics depending on temperature, sample thickness and voltage applied revealed the presence of traps with concentration of about (4-5)´10SUP12/SUP cmSUP-3/SUP with the corresponding energy level at 0.8 ? 0.9 eV counted from the bottom of conduction band. The conductivity was determined by electron injection from electrodes in space charge limited current mode.
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