ZnO Gate Based MOSFETs for Sensor Applications

Abstract

A metal–oxide–semiconductor field-effect transistor (MOSFET) with transparent ZnO as its gate metal was fabricated and its photodetecting capabilities were investigated. For the fabrication of the MOSFET, a four level mask was used. The first level was used for making the diffusion wells for source and drain. The second level to form the via holes for Aluminum deposition followed by the third level to shape the source and drain contact structures. Finally the fourth level mask to pattern the ZnO gate metal. The ZnO gate metal was deposited by sputtering process. The electrical characteristic analysis was performed on the fabricated MOSFETs when different types of light were incident on it.