Gallium Doped Zinc Oxide Work Function Extraction Using Transparent Gate MOSFET Devices

Abstract

Recent commercialization has peaked interest in transparent conducting oxides being implemented in transparent applications. Gallium doped zinc oxide (GZO) films exhibit excellent transmission characteristics in the visible spectrum while maintaining high electrical conductivity. In majority applications the work function of the material used has an impact on the device performance as it affects the energy barrier height at the hetero-junction interface. Hence, the work function identification is of critical importance.In this article, we discuss work function extraction of GZO from a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) device for the first time. Four level mask sets were used to fabricate two MOSFET devices following exact same conditions. Source and drain contacts were made using aluminum metal for both MOSFETs. One of the MOSFET was fabricated with aluminum as gate contact and the other MOSFET with transparent conducting GZO as its gate contact. GZO used in this research were RF sputtered. From the threshold voltage equation of both the fabricated MOSFETs, work function of GZO was extracted. The electrical and optical transmission studies were also performed on the sputtered GZO thin films and are reported in this study.