Abstract
Nano Technology is the branch of technology that deals with dimensions and tolerances in terms of nanometers. In this paper, the electrical characteristics analysis is determined for the Nano-GaN HEMT and Micro-GaN HEMT and also power spectrum density is determined for GaN Nano-HEMT by reducing the gate length Lg in nm range. The GaN Nano HEMT is producing high current comparing to Micro GaN HEMT. Accuracy of the proposed analytical model results is verified with simulation results.
Highlights
High electron mobility transistors are made up of the GaAs semiconductor material, but the research on HEMT experts says that GaN has good characteristics than GaAs because of their good breakdown voltage, less power dissipation
From the figures it is observed that um gate length GaN HEMT produces less Drain current compared to the Nano GaN HEMT
The Drain current of GaN Nano-HEMT is hundred times more than that of GaN HEMT is observed in Figure 2 and Figure 3
Summary
High electron mobility transistors are made up of the GaAs semiconductor material, but the research on HEMT experts says that GaN has good characteristics than GaAs because of their good breakdown voltage, less power dissipation. The Applications of GaN/AlGaN HEMT are used in Space applications, Radar and in satellites because they are considered to be very promising candidates for high-speed and high-power applications. These devices offer advantages such as high breakdown voltage, high charge density, and good electron mobility [1]. Using the dimensions and the parameters of developed HEMT, we have compared the I-V characteristics for the Nano meter gate length and Micro meter gate length GaN-HEMT, and we have determined the noise power spectrum density for Nano GaN HEMT using Matlab and the performance is compared with the simulation results
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