Acceptor Density Research Articles

Improving the efficiency of ZnO/WS2/CZTS1 solar cells using CZTS2 as BSF layer by SCAPS-1D numerical simulation

With a high absorption coefficient and tunable bandgap CZTS (Copper Zinc Tin Sulfide) makes it suitable for photovoltaic applications. Present paper deals with the simulation and modeling of CZTS-based solar cells using tungsten disulfide (WS2) as the buffer layer and CZTS2 as the back surface field (BSF) layer to study the performance of the solar cell. Considering different physical and geometrical parameters such as thickness, acceptor density, interfacial defect density, and metal contact work functions the device calibration has been done. The temperature is varied from 300 K to 400 K to study the impact on device performance. The C-V and 1/C2 plot is presented to calculate the built-in voltage for the device. The series (Rs) and shunt (Rsh) resistance of 1 and 106 ohm.cm2 were kept throughout the simulation. The optimized thickness for the absorber, BSF, buffer, and window layers are 800 nm, 140 nm, 30 nm, and 90 nm respectively. The obtained results are validated using the experimental results available in the literature. Varying the values of different parameters, the optimal efficiency of 26% was reported in this work. Contrary to conventional solar cells, which contain expensive and toxic elements, WS2 may be a good option as a buffer layer in CZTS solar cells.

Effect of shallow doping on performance parameters of single heterojunction solar cell

Abstract Fill factor and conversion efficiency of single heterojunction solar cell is analytically computed based on the shallow doping at GaAs quantum well region. Poisson’s equation is solved with suitable boundary condition applied at hetero-interface for both dark and illuminated conditions, corresponding to which open-circuit voltage and short-circuit current are computed. Realistic dependence of minority carrier distribution on material layers and diffusion widths are taken into account for simulation purpose. Result exhibits that variation of acceptor density leads to better outcome in terms of both efficiency and fill factor, which is also critically depends on length of quantum well region. Doping of AlGaAs barrier layer has negligible influence on fill factor and conversion efficiency. Optimized dimension of quantum well layer width is the critical parameter for design of efficient solar cell, as revealed from the analysis.

CsPbI3-perovskite quantum dot solar cells: unlocking their potential through improved absorber layer characteristics and reduced defects

Perovskite quantum dots (CsPbI3-PQDs), a translucent material, have gained great interest in the PV industries owing to their unified virtues of perovskites and quantum dots. However, researchers have found that perovskite solar cells (PSCs) suffer from issues like low stability at high relative humidity, energy states imbalance, severe hysteresis, and an easy decomposition under ultraviolet (UV) radiation that severely restrict their industrialization. Quantum dots (QDs) are excellent materials with numerous admirable traits that have been extensively employed in PSCs to overcome the aforementioned problems. To achieve high performance of the examined device, the CsPbI3-PQDs has been stacked between two charge transport layers, i.e., Cl@SnO2 (to facilitate electrons towards cathode) and P3HT (to facilitate holes towards anode). In this context, study of variations in different parameters such as thickness and acceptor density of the CsPbI3-PQDs absorber layer has been done. After varying the thickness and acceptor density of the CsPbI3-PQDs layer, the cell’s performance is optimized at thickness of 400 nm and acceptor density of 1 × 1017/cm3 delivering higher PV parameters power conversion efficiency (PCE):16.17%, open circuit voltage (VOC):1.02 V, short circuit density (JSC):18.06 mA cm−2 and fill factor (FF): 87.06% respectively. Thereafter, the effects of bulk defects in CsPbI3-PQDs and the interface between CsPbI3-PQDs and Cl@SnO2 have been explored in this work. For the cell to work at its best, the bulk defect density and interface defect density, respectively, should not be more than 1 × 1014 /cm3 and 1 × 1013 /cm2. Afterwards, a comprehensive study has been done by varying the front electrode transparency (from 40% to 95%) to improve the device performance. With 95% of front electrode transparency, the performance of device is improved due to increase in the photon coupling.

A Numerical Approach to Analysis of an Environment-Friendly Sn-Based Perovskite Solar Cell with SnO2 Buffer Layer Using SCAPS-1D

In this research, we have proposed a Sn-based perovskite solar cell using solar cell capacitance software. The main aim of this study is to develop an environment-friendly and highly efficient structure that can be used as an alternative to other toxic lead-based perovskite solar cells. This work performed a numerical analysis for the proposed (Al/ZnO/SnO2/CH3NH3SnI3/Ni) device structure. The absorber layer CH3NH3SnI3, buffer layer SnO2, and electron transport layer (ETL) ZnO, with aluminium as the front contact and nickel as the back contact, have been used in this simulation. Several analyses have been conducted for the proposed structure, such as the impact of the absorber layer thickness, acceptor density, defect density, series and shunt resistances, back contact work function, and operating temperature. The device simulation revealed that the optimum thickness of the absorber layer is 1.5 μm and 0.05 μm for the buffer layer. The proposed Sn-based perovskite structure has obtained a conversion efficiency of 28.19% along with FF of 84.63%, Jsc of 34.634 mA/cm2, and Voc of 0.961 V. This study shows the upcoming lead-free perovskite solar cell’s enormous potential.

Degradation behavior of CIGS solar Cells: A parametric analysis

A parametric study of the effect of bulk and interface properties on device characteristics as a function of heat and light stress under open-circuit and short-circuit conditions is developed for Cu(In,Ga)(S,Se)2 solar cells using SCAPS-1D simulator. The variables and interdependencies modeled include: (1) conduction band offset (CBO) between buffer and absorber; (2) buffer ionized donor density; (3) CIGS shallow acceptor density; (4) CIGS deep acceptor density; (5) CIGS shallow donor density; (6) ionized acceptor concentration in the ordered vacancy compound (OVC) CIGS/buffer interface; and (7) back contact work-function. An increase in absorber shallow acceptor or a decrease in shallow donor density results in an increase in net carrier density and open-circuit voltage (VOC). A decrease in VOC is observed with an increase in the deep acceptors or neutral midgap defects in the CIGS due to higher charge carrier recombination. A change of CBO from spike to cliff condition is a dominant mechanism of decreasing VOC with an interface defect density of 1012 cm−2. The minimum depletion width is found to be specifically sensitive to CBO and interface defect density. An inflection in the capacitance–voltage curves (in reverse bias) is observed with simultaneous increase in bulk deep acceptor density and shallow donor density near the back contact.

Performance analysis of tin-based perovskite solar cell with MoO3 as a HTL under a wide temperature range

In the present work, a solar cell structure MoO3/CH3NH3SnI3/TiO2/FTO has been simulated in SCAPS-1D with absorber layer CH3NH3SnI3, hole transport layer (HTL) MoO3, electron transport layer (ETL) TiO2 and window layer FTO. The parameters like thickness, acceptor density, defect densities of the absorber layer as well as HTL and working temperature of the device have been optimized. After optimizing the key parameters, the structure shows best output with Fill factor (FF) 79.17%, Open circuit voltage (Voc) 0.85 V, short circuit current density (Jsc) 35.52 mA/cm2 and efficiency (ɳ) 24.02% at 283.60 K. The obtained results imply that the designed cell performs well at lower temperature region and the device can be implemented for commercial applications.

Conducting surface layers formed by hydrogenation of O-implanted β-Ga2O3

Lightly n-type β-Ga2O3 grown by Halide Vapor Phase Epitaxy (HVPE) on heavily n-type doped β-Ga2O3 substrate was implanted with 1 MeV O ions to a fluence of 1016 cm−2. The film remained β-polymorph and showed no broadening of the x-ray rocking curve width after irradiation even though the calculated number of primary defects was very high. The implanted region was characterized by a strong compensation, likely due to the presence of a high density of split Ga vacancy acceptors. Treatment of the irradiated film in dense hydrogen plasma at 330 °C for 0.5 h led to the formation of a conducting surface layer about 0.5 µm-thick with carrier density 1017 cm−3, a suppression of the signal due to Fe acceptors in Deep Level transient Spectroscopy (DLTS) and a strong enhancement of DLTS peak caused by centers at Ec-0.74 eV (so called E2 * traps). The mechanism appears to be that hydrogen plasma treatment leads to creation of a high number of donor states due complexing of hydrogen with Ga vacancies and to passivation of Fe acceptors with hydrogen donors.

Investigation of deep defects and their effects on the properties of NiO/β-Ga2O3 heterojuncion diodes

In this study, the effect of rapid thermal annealing (RTA) on the electrical and optical properties of NiO/ β-Ga2O3 heterojunction diodes was investigated using capacitance-voltage, current-voltage, Deep Level Transient Spectroscopy (DLTS), Laplace DLTS, photoluminescence and micro-Raman spectroscopy techniques, and SILVACO-TCAD numerical simulator. The NiO is designed to be lowly-doped, allowing for the NiO full depletion at zero bias and the study of properties of β-Ga2O3 and its interface with NiO. Micro-Raman results revealed good agreement with the theoretical and experimental results reported in the literature. The photoluminescence intensity of the sample after RTA is five times higher than the fresh sample due to a rise in the density of gallium and oxygen vacancies (VGa + VO) in the annealed β-Ga2O3 samples. The current-voltage characteristics showed that annealed devices exhibited a lower ideality factor at room temperature and higher barrier height compared with fresh samples. The DLTS measurements demonstrated that the number of electrically active traps were different for the two samples. In particular, three and one electron traps were detected in fresh samples and annealed samples, respectively. SILVACO-TCAD was used to understand the distribution of the detected electron E2 trap (Ec-0.15 eV) in the fresh sample and the dominant transport mechanisms. A fairly good agreement between simulation and measurements was achieved considering a surface NiO acceptor density of about 1 × 1019 cm−3 and E2 trap depth into the surface of β-Ga2O3 layer of about 0.220 µm and the effect of the most observed Ec-0.75 eV trap level in β-Ga2O3. These results unveil comprehensive physics in NiO/β-Ga2O3heterojunction and suggest that RTA is an essential process for realizing high-performance NiO/β-Ga2O3devices.

High‐Performance Silver‐Doped Porous CuBi2O4 Photocathode Integrated with NiO Hole‐Selective Layer for Improved Photoelectrochemical Water Splitting

AbstractCuBi2O4(CBO) has received considerable attention owing to its ideal optical bandgap and positive photocurrent onset potential. However, CBO photocathodes exhibit poor charge carrier separation and transfer across the conducting substrate interface. Herein, a systematic incorporation of Ag+‐cations into nanosized porous CBO network (ACBO) using a simple pulsed‐electrodeposition method. In ACBO photocathode, the Ag+‐ions replace the Bi3+‐ions, thereby building an increased hole concentration, which further signifies the photogenerated electron‐hole separation. Additionally, introducing a low‐cost NiO hole‐selective layer between ACBO and the conducting substrate enables a back‐interface‐aided hole‐extraction and electron blocking, resulting in an improved charge transfer across the back interface. Compared with an unmodified CBO, the NiO/ACBO photocathode exhibits a three‐fold enhanced photocurrent performance. This enhances the photocurrent originating from the incorporation of a substantial amount of Ag+‐ions into the CBO structure, leading to an increased acceptor density as well as the formation of an appropriate hole‐selective layer across the back‐contact. The absorption percentage, time‐resolved photoluminescence, and photoelectrochemical impedance spectroscopy measurements unveil the potential light harvesting, charge separation, and transfer characteristics of the NACBO photoelectrode, respectively. Through this systematic study, an efficient and simple strategy is determined for developing ternary metal oxide‐based photocathode/photoanode systems for sustainable energy applications.

Simulation of Carbon-Based Perovskite Solar Cell Using PBS-TBAI as a Hole Transport Layer (HTL)

Perovskite material is a propitious candidate for high-efficiency and cost-efficient solar cells. Inorganic and organic perovskite materials show outstanding electrical and optical characteristics. As an absorber layer, it attracts the researchers due to its tunable bandgap, higher carrier mobility, and higher absorption coefficient. In this article, CH3NH3PbI3-based solar cell is proposed with architecture FTO/TiO2/CH3NH3PbI3/PbS-TBAI/Carbon. The present study shows that carbon as back contact is cost-efficient material and shows stable performance. Thickness variation of absorber layer (CH3NH3PbI3) and variation in temperature has been done for device optimization and its J–V characteristics and quantum efficiency are studied. Optimum thickness of absorber layer for donor density of 1.0×1013 cm−3 and acceptor density of 1.0×1012 cm−3 is estimated to be 1 μm. This n-i-p planar architecture stands out with a fill factor of 36.75% and a power conversion efficiency of 7.59% with Jsc and Voc value of 24.55 mA/cm2 and 0.84 V respectively. Without resistance the device architecture bears Voc 0.8 V, Jsc 25.73 mA/cm2, FF 80.33% and PCE of 16.24%. The simulation has been performed using SCAPS-1D at an optimized temperature of 300 K and at an AM 1.5 G illumination. The present study is useful in selecting material parameters and fabricating efficient and low-cost perovskite solar cells.

Numerical Simulation of High Efficiency Environment Friendly CuBi2O4-Based Thin-Film Solar Cell Using SCAPS-1D

In this research work, a copper bismuth oxide- (CuBi2O4-) based thin-film solar cell has been proposed for the lead and toxic-free (Al/ITO/TiO2/CuBi2O4/Mo) structure simulated in SCAPS-1D software. The main aim of this work to make an ecofriendly and highly efficient thin-film solar cell. The absorber layer CuBi2O4, buffer layer TiO2, and the electron transport layer (ETL) ITO have been used in this simulation. The performance of the suggested photovoltaic devices was quantitatively evaluated using variations in thickness such as absorber, buffer, defect density, operating temperature, back contact work function, series, shunt resistances, acceptor density, and donor density. The absorber layer thickness is fixed at 2.0 μm, the buffer layer at 0.05 μm, and the electron transport layer at 0.23 μm, respectively. The CuBi2O4 absorber layer produces a solar cell efficiency of 31.21%, an open-circuit voltage ( V oc ) of 1.36 V, short-circuit current density ( J sc ) of 25.81 mA/cm2, and a fill factor (FF) of 88.77%, respectively. It is recommended that the proposed CuBi2O4-based structure can be used as a potential for thin-film solar cells that are both inexpensive and highly efficient.

Design and numerical analysis of CIGS-based solar cell with V2O5 as the BSF layer to enhance photovoltaic performance

Copper indium gallium selenide (CIGS)-based solar cells have exhibited greater performance than the ones utilizing cadmium telluride (CdTe) or hydrogenated amorphous silicon (a-Si: H) as the absorber. CIGS-based devices are more efficient, considering their device performance, environmentally benign nature, and reduced cost. In this article, we proposed a potential CIGS-absorber-based solar cell with an FTO/ZnSe/CIGS/V2O5/Cu heterostructure, with a V2O5 back-surface field (BSF) layer, SnO2:F (FTO) window layer, and ZnSe buffer layer. Using the solar cell capacitance simulator one-dimensional simulation software, the effects of the presence of the BSF layer, the thickness, bulk defect density, and acceptor density of the absorber layer, buffer layer thickness, interfacial defect density, device resistance, and operating temperature on the open-circuit voltage, short-circuit current, fill factor, and efficiency, as well as on the quantum efficiency and recombination and generation rate, of the device have been explored in detail. The simulation results revealed that only a 1 μm-thick-CIGS absorber layer with V2O5 BSF and ZnSe buffer layers in this structure offers an outstanding efficiency of 31.86% with a VOC of ∼0.9 V. Thus, these outcomes of the CIGS-based proposed heterostructure provide an insightful pathway for fabricating high-efficiency solar cells with performance more promising than the previously reported conventional designs.

Photoelectrochemical Performance of a CuBi2O4 Photocathode with H2O2 as a Scavenger

Photoelectrochemical (PEC) water splitting is an eco-friendly method for producing clean and sustainable hydrogen fuels. Compared with the fabrication of solar hydrogen using n-type metal oxide semiconductor photoanodes, that of solar hydrogen using p-type metal oxide semiconductor photocathodes has not been researched as thoroughly. Therefore, this study investigated the effect of drop casting time on the PEC performance of a prepared CuBi2O4 photocathode. XPS, HRTEM, UV-DRS, Raman spectroscopy, XRD, and SEM analyses were used to characterize the prepared CuBi2O4 photocathode. Owing to the high charge separation and transfer, the photocurrent density of the CuBi2O4 photocathode was ~0.6 mA cm−2 at 0.3 V vs. RHE. The nanoporous CuBi2O4 photocathode exhibited a high photocurrent density of up to 1.2 mA cm−2 at 0.3 V vs. RHE with H2O2 as a sacrificial agent. Mott–Schottky and impedance measurements were also performed on the CuBi2O4 photocathode to estimate its acceptor density and charge-transfer resistance.

Investigation of electrical properties of CH3NH3Sn(I1-xClx)3 perovskite solar cell by SCAPS-1D simulation

In this research, we developed a tin-based eco-friendly CH3NH3Sn(I1-xClx)3 perovskite solar cell to simulate the architecture FTO/TiO2/CH3NH3Sn(I1-xClx)3/Cu2O by using the SCAPS-1D. We have studied the effect of the performance of solar cells by varying thickness, band gap energy, doping acceptor density, and total defect density of absorber layer-CH3NH3Sn(I1-xClx)3 through the software tool. At first, we simulate the device and find the performance of electrical properties such as efficiency, based on the parameters that are taken from the previous research paper. Later we vary only on the absorber layer parameters mentioned above, to get the optimum results of the designed solar cell. The efficiency for the plugging parameters value and after applying the parameter obtained optimum value jumped from 27.83% to 39.28%. After optimizing all the properties, the efficiency has been enhanced by about 11.45%.

High-performance lead-free perovskite solar cell: a theoretical study

In the present work, a lead-free perovskite solar cell was designed using methylammonium tin iodide (CH3NH3SnI3), poly-3- hexylthiophene and titanium dioxide (TiO2) as absorber layer, hole transport layer and electron transport layer respectively. Perovskite solar cells have made impressive strides recently, and their performance has significantly improved. A fundamental n–i–p planar heterojunction structure of photovoltaic cells was designed and simulated with solar cell capacitance simulation software (Scaps-1D). In this study, different parameters such as thickness, acceptor density, temperature and defect density were varied to improve the device performance. Optimum values of different parameters were used to attain good results for the photovoltaic device such as power convergence efficiency (PCE), V OC, fill factor and J SC of 27.54%, 1.0216 V, 86.56% and 31.14 mA/cm2, respectively. The acceptor density was varied from 1 × 10−12 to 1 × 10−20 cm−3 for the proposed device structure. The PCE of this device structure increased when different charge transport materials were used. This simulation study showed that the proposed cell structure could be used to construct a photovoltaic cell with a higher efficiency.

Impact of the split-off band on the tunneling current at metal/heavily-doped p-type SiC Schottky interfaces

Ni/p-type SiC Schottky barrier diodes with various acceptor densities (N A = 5 × 1015 to 3 × 1019 cm−3) are fabricated and the measured current–voltage characteristics are analyzed by numerical calculation of tunneling current. The tunneling current is calculated taking account of multiple valence bands. It is revealed that tunneling of holes in the split-off band, which has a light effective mass (0.21m 0), is the dominant conduction mechanism at metal/heavily-doped p-type SiC Schottky interfaces.

Design and Simulation of Cs2BiAgI6 Double Perovskite Solar Cells with Different Electron Transport Layers for Efficiency Enhancement

Lead-free Cs2BiAgI6 has garnered a lot of research interest recently due to its suitability as a potential absorber layer in the solar cell (SC) architecture owing to its low cost, good stability, and high efficiency. The main highlight of this research work includes the photovoltaic (PV) performance enhancement of Cs2BiAgI6 double perovskite solar cells (PSCs) by optimizing the optoelectronic parameters of the absorber, electron transport layer (ETL), hole transport layer (HTL), and various interface layers. Solar Cell Capacitance Simulator One dimension (SCAPS-1D) numerical simulation was used to optimize the performance of Cs2BiAgI6 absorber-based SCs consisting of copper barium thiostannate (CBTS) as the HTL and TiO2, PCBM, ZnO, IGZO, SnO2, and WS2 as ETLs. The role of the non-lead cesium-based halide perovskite absorber layer in the improvement of the SC performance was systematically investigated through a variation in the thickness, doping density, and defect density of the absorber layer, ETL, and HTL. The performance of the investigated device architectures is largely dependent on the thickness of the absorber layer, acceptor density, defect density, and the combination of different ETLs and HTLs. We found that TiO2, PCBM, ZnO, IGZO, SnO2, and WS2 ETL-based optimized devices recorded a power conversion efficiency (PCE) of 23.14, 23.71, 23.69, 22.97, 23.61, and 21.72%, respectively. Furthermore, the effect of series and shunt resistances, temperature, capacitance, and Mott–Schottky for the six optimized devices was estimated along with the computation of the corresponding generation and recombination rates, current density–voltage (J–V), and quantum efficiency (QE) characteristics. The PV parameters obtained from this comprehensive analysis are finally compared with the earlier published theoretical and experimental reports on Cs2BiAgI6 absorber-based SCs.

Performance evaluation of free hole-transport layer CsPbI3 perovskite solar cells

Stable inorganic cesium lead iodide (CsPbI3)-based perovskite solar cells received intensive research in the last 2 decades. Several experimental and simulation studies have been performed on CsPbI3 solar cells to achieve high efficiency. However, the usage of the hole-transport layer (HTL) has a good impact on the solar cell’s power conversion efficiency (PCE); HTL layer usage increases the cost of the cell. In this work, a SCAPS-1D simulation study is performed on HTL-free CsPbI3 perovskite solar cells to enhance the device performance. The optical refractive index and reflectivity of CsPbI3 are calculated with density functional theory. The solar cell device structure is investigated and optimized by changing parameters like metal back contact work function, absorber thickness, acceptor density, and defect density. It is found that the optimized solar cell device achieved a PCE of 17.2% with Selenium (Se) as a back metal contact. The optimized absorber thickness for the best PCE is 2000 nm, doping density concentration of 1 × 1019 cm−3, and defect density concentration of 2 × 1012 cm−3. A PCE of 24.5% is achieved using these parameters of the CsPbI3 absorber. The simulation study may guide the fabrication of low-cost and highly efficient HTL-free inorganic CsPbI3 solar cells.

Graded Bandgap Ultrathin CIGS Solar Cells

In this paper, we physically modeled passivated ultrathin Cu (In1−xGax) Se2 solar cells with different bandgap grading configurations. Firstly, we have designed the cell architecture according to the fabricated model. The novelty in this work is the modeling of passivated u-CIGS solar cells with different bandgap grading profile configurations in order to achieve high efficiency with a thickness of 500 nm. A significant influence on device performance has been observed while changing absorber doping density, electron affinity, and operating temperature (range of 10–70 °C) for the investigated samples. ZnS has been used as a buffer layer to replace the conventional CdS material in order to improve cell efficiency. The impact of the buffer doping density and electron affinity on u-CIGS cell performance is explored. The simulation results show that a high bandgap at the front and rear sides with an acceptor density of 2 × 1016 provide the best electrical cell parameters: Jsc of 31.53 mA/cm2, Voc of 742.78 mV, FF of 77.50%, η of 18.15%. Our findings can be considered guidelines for new single and/or tandem cell optimization to achieve high efficiency.

Harnessing the potential of CsPbBr3-based perovskite solar cells using efficient charge transport materials and global optimization.

Perovskite solar cells (PSCs) have become a possible alternative to traditional photovoltaic devices for their high performance, low cost, and ease of fabrication. Here in this study, the SCAPS-1D simulator numerically simulates and optimizes CsPbBr3-based PSCs under the optimum illumination situation. We explore the impact of different back metal contacts (BMCs), including Cu, Ag, Fe, C, Au, W, Pt, Se, Ni, and Pd combined with the TiO2 electron transport layer (ETL) and CFTS hole transport layer (HTL), on the performance of the devices. After optimization, the ITO/TiO2/CsPbBr3/CFTS/Ni structure showed a maximum power conversion efficiency (PCE or η) of 13.86%, with Ni as a more cost-effective alternative to Au. After the optimization of the BMC the rest of the investigation is conducted both with and without HTL mode. We investigate the impact of changing the thickness and the comparison with acceptor and defect densities (with and without HTL) of the CsPbBr3 perovskite absorber layer on the PSC performance. Finally, we optimized the thickness, charge carrier densities, and defect densities of the absorber, ETL, and HTL, along with the interfacial defect densities at HTL/absorber and absorber/ETL interfaces to improve the PCE of the device; and the effect of variation of these parameters is also investigated both with and without HTL connected. The final optimized configuration achieved a VOC of 0.87 V, JSC of 27.57 mA cm-2, FF of 85.93%, and PCE of 20.73%. To further investigate the performance of the optimized device, we explore the impact of the temperature, shunt resistance, series resistance, capacitance, generation rate, recombination rate, Mott-Schottky, JV, and QE features of both with and without HTL connected. The optimized device offers the best thermal stability at a temperature of 300 K. Our study highlights the potential of CsPbBr3-based PSCs and provides valuable insights for their optimization and future development.