Abstract
In the present work, a solar cell structure MoO3/CH3NH3SnI3/TiO2/FTO has been simulated in SCAPS-1D with absorber layer CH3NH3SnI3, hole transport layer (HTL) MoO3, electron transport layer (ETL) TiO2 and window layer FTO. The parameters like thickness, acceptor density, defect densities of the absorber layer as well as HTL and working temperature of the device have been optimized. After optimizing the key parameters, the structure shows best output with Fill factor (FF) 79.17%, Open circuit voltage (Voc) 0.85 V, short circuit current density (Jsc) 35.52 mA/cm2 and efficiency (ɳ) 24.02% at 283.60 K. The obtained results imply that the designed cell performs well at lower temperature region and the device can be implemented for commercial applications.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
