Abstract
Ni/p-type SiC Schottky barrier diodes with various acceptor densities (N A = 5 × 1015 to 3 × 1019 cm−3) are fabricated and the measured current–voltage characteristics are analyzed by numerical calculation of tunneling current. The tunneling current is calculated taking account of multiple valence bands. It is revealed that tunneling of holes in the split-off band, which has a light effective mass (0.21m 0), is the dominant conduction mechanism at metal/heavily-doped p-type SiC Schottky interfaces.
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