2D Electron Research Articles

Design of the electron cyclotron emission diagnostic on EXL-50 spherical torus

The electron cyclotron emission (ECE) diagnostic system has been developed on the ENN spherical torus (EXL-50). The ECE system is designed to detect radiation emitted by energetic electrons, rather than conventional 1D electron temperature profile measurement, in the frequency range of 4−40 GHz. The system is composed of five subsystems, each covering a different frequency band, including the C-band (4−8 GHz), X-band (8−12 GHz), Ku-band (12−18 GHz), K-band (18−26.5 GHz) and K -band (26.4−40 GHz). The system uses heterodyne detection to analyze the received signals. The K-band and K -band subsystems are located horizontally in the equatorial plane of the EXL-50, while the C-band, X-band and Ku-band subsystems are located under the vacuum vessel of the EXL-50. To direct the microwaves from the plasma to the antennas for the horizontal detection subsystems, a quasi-optical system has been developed. For the vertical detection subsystems, the antennas are directly attached to the port located beneath the torus at = 700 mm, which is also the magnetic axis of the torus. The system integration, bench testing and initial experimental results will be thoroughly discussed, providing a comprehensive understanding of the ECE system’s performance and capabilities.

Stoner Ferromagnetism in a Momentum-Confined Interacting 2D Electron Gas.

In this work we investigate the ground state of a momentum-confined interacting 2D electron gas, a momentum-space analog of an infinite quantum well. The study is performed by combining analytical results with a numerical exact diagonalization procedure. We find a ferromagnetic ground state near a particular electron density and for a range of effective electron (or hole) masses. We argue that this observation may be relevant to the generalized Stoner ferromagnetism recently observed in multilayer graphene systems. The collective magnon excitations exhibit a linear dispersion, which originates from a diverging spin stiffness.

Phase-engineered synthesis of atomically thin te single crystals with high on-state currents

Multiple structural phases of tellurium (Te) have opened up various opportunities for the development of two-dimensional (2D) electronics and optoelectronics. However, the phase-engineered synthesis of 2D Te at the atomic level remains a substantial challenge. Herein, we design an atomic cluster density and interface-guided multiple control strategy for phase- and thickness-controlled synthesis of α-Te nanosheets and β-Te nanoribbons (from monolayer to tens of μm) on WS2 substrates. As the thickness decreases, the α-Te nanosheets exhibit a transition from metallic to n-type semiconducting properties. On the other hand, the β-Te nanoribbons remain p-type semiconductors with an ON-state current density (ION) up to ~ 1527 μA μm−1 and a mobility as high as ~ 690.7 cm2 V−1 s−1 at room temperature. Both Te phases exhibit good air stability after several months. Furthermore, short-channel (down to 46 nm) β-Te nanoribbon transistors exhibit remarkable electrical properties (ION = ~ 1270 μA μm−1 and ON-state resistance down to 0.63 kΩ μm) at Vds = 1 V.

Synthesis of 2D layered transition metal (Ni, Co) hydroxides via edge-on condensation

Layered transition metal hydroxides (LTMHs) with transition metal centers sandwiched between layers of coordinating hydroxide anions have attracted considerable interest for their potential in developing clean energy sources and storage technologies. However, two-dimensional (2D) LTMHs remain largely understudied in terms of physical properties and applications in electronic devices. Here, for the first time we report > 20 μm α-Ni(OH)2 2D crystals, synthesized from hydrothermal reaction. And an edge-on condensation mechanism assisted with the crystal field geometry is proposed to understand the 2D intra-planar growth of the crystals, which is also testified through series of systematic comparative studies. We also report the successful synthesis of 2D Co(OH)2 crystals (> 40 μm) with more irregular shape due to the slightly distorted octahedral geometry of the crystal field. Moreover, the detailed structural characterization of synthesized α-Ni(OH)2 are performed. The optical band gap energy is extrapolated as 2.54 eV from optical absorption measurements and the electronic bandgap is measured as 2.52 eV from reflected electrons energy loss spectroscopy (REELS). We further demonstrate its potential as a wide bandgap (WBG) semiconductor for high voltage operation in 2D electronics with a high breakdown strength, 4.77 MV/cm with 4.9 nm thickness. The successful realization of the 2D LTMHs opens the door for future exploration of more fundamental physical properties and device applications.

Magnetic Properties of A Cavity‐Embedded Square Lattice of Quantum Dots or Antidots

AbstractQuantum electrodynamical density functional theory is applied to obtain the electronic density, spin polarization, as well as orbital and spin magnetizations of square periodic arrays of quantum dots or antidots subjected to the influence of a far‐infrared cavity photon field. A gradient‐based exchange‐correlation functional adapted to a 2D electron gas in a transverse homogeneous magnetic field is used in the theoretical framework and calculations. The obtained results predict a non‐trivial effect of the cavity field on the electron distribution in the unit cell of the superlattice, as well as on the orbital and spin magnetizations. The number of electrons per unit cell of the superlattice is shown to play a crucial role in the modification of the magnetization via the electron–photon coupling. The calculations show that cavity photons strengthen the diamagnetic effect in the quantum dot structure, while they weaken the paramagnetic effect in the antidot structure. As the number of electrons per unit cell of the lattice increases, the electron–photon interaction reduces the exchange forces that will otherwise promote strong spin splitting for both the dot and the antidot arrays.

Non‐Destructive Tomographic Nanoscale Imaging of Ferroelectric Domain Walls

AbstractExtraordinary physical properties arise at polar interfaces in oxide materials, including the emergence of 2D electron gases, sheet‐superconductivity, and multiferroicity. A special type of polar interface is ferroelectric domain walls, where electronic reconstruction phenomena can be driven by bound charges. Great progress has been achieved in the characterization of such domain walls and, over the last decade, their potential for next‐generation nanotechnology has become clear. Established tomography techniques, however, are either destructive or offer insufficient spatial resolution, creating a pressing demand for 3D imaging compatible with future fabrication processes. Here, non‐destructive tomographic imaging of ferroelectric domain walls is demonstrated using secondary electrons. Utilizing conventional scanning electron microscopy (SEM), the position, orientation, and charge state of hidden domain walls are reconstructed at distances up to several hundreds of nanometers away from the surface. A mathematical model is derived that links the SEM intensity variations at the surface to the local domain wall properties, enabling non‐destructive tomography with good noise tolerance on the timescale of seconds. The SEM‐based approach facilitates high‐throughput screening of materials with functional domain walls and domain‐wall‐based devices, which is essential for monitoring during the production of device architectures and quality control in real‐time.

Tunable 2D Electron- and 2D Hole States Observed at Fe/SrTiO3 Interfaces.

Oxide electronics provide the key concepts and materials for enhancing silicon-based semiconductor technologies with novel functionalities. However, a basic but key property of semiconductor devices still needs to be unveiled in its oxidic counterparts: the ability to set or even switch between two types of carriers-either negatively (n) charged electrons or positively (p) charged holes. Here, direct evidence for individually emerging n- or p-type 2D band dispersions in STO-based heterostructures is provided using resonant photoelectron spectroscopy. The key to tuning the carrier character is the oxidation state of an adjacent Fe-based interface layer: For Fe and FeO, hole bands emerge in the empty bandgap region of STO due to hybridization of Ti- and Fe- derived states across the interface, while for Fe3O4 overlayers, an 2D electron system is formed. Unexpected oxygen vacancy characteristics arise for the hole-type interfaces, which as of yet hadbeen exclusively assigned to the emergence of 2DESs. In general, this finding opens up the possibility to straightforwardly switch the type of conductivity at STO interfaces by the oxidation state of a redox overlayer. This will extend the spectrum of phenomena in oxide electronics, including the realization of combined n/p-type all-oxide transistors or logicgates.

Interactions and ultrafast dynamics of exciton complexes in a monolayer semiconductor with electron gas

Abstract We present femtosecond pump-probe measurements of neutral and charged exciton optical response in monolayer MoSe2 to resonant photoexcitation of a given exciton state in the presence of 2D electron gas. We show that creation of charged exciton (X−) population in a given K+, K− valley requires the capture of available free carriers in the opposite valley and reduces the interaction of neutral exciton (X) with the electron Fermi sea. We also observe spectral broadening of the X transition line with the increasing X− population caused by efficient scattering and excitation induced dephasing. From the valley-resolved analysis of the observed effects we are able to extract the spin-valley relaxation times of free carriers as a function of carrier density. Moreover, we analyze the oscillator strength and energy shift of X in the regime of interaction with electron Fermi sea under resonant excitation. From this we can observe the process of X decay by radiative recombination paired with trion formation. We demonstrate an increase of neutral exciton relaxation rate with the introduction of Fermi sea of electrons. We ascribe the observed effect to the increased efficiency of the trion formation, as well as the radiative decay caused by the screening of disorder by the free carriers.

DeepFocus: fast focus and astigmatism correction for electron microscopy

High-throughput 2D and 3D scanning electron microscopy, which relies on automation and dependable control algorithms, requires high image quality with minimal human intervention. Classical focus and astigmatism correction algorithms attempt to explicitly model image formation and subsequently aberration correction. Such models often require parameter adjustments by experts when deployed to new microscopes, challenging samples, or imaging conditions to prevent unstable convergence, making them hard to use in practice or unreliable. Here, we introduce DeepFocus, a purely data-driven method for aberration correction in scanning electron microscopy. DeepFocus works under very low signal-to-noise ratio conditions, reduces processing times by more than an order of magnitude compared to the state-of-the-art method, rapidly converges within a large aberration range, and is easily recalibrated to different microscopes or challenging samples.

Strain-induced enhancement of 2D electron gas density in AlGaN/GaN heterojunction: a first-principles study

In this study, we investigated the impact of strain on the electronic structure and polarization of Al x Ga1−x N and AlGaN/GaN heterojunctions using first-principles density functional theory. Our findings reveal that, in the absence of strain, the band gap and electron effective mass of Al x Ga1−x N increase with higher Al composition. Similarly, the spontaneous and piezoelectric polarization also increase accordingly. Moreover, under biaxial 5% tensile strain and 5% compressive strain, the two-dimensional (2D) electron gas surface density in the AlGaN/GaN heterojunction reaches 8.12 × 1012 cm−2 and 2.50 × 1012 cm−2, respectively. Comparatively, the surface density without strain is 5.62 × 1012 cm−2. Tensile strain significantly enhances the 2D electron gas surface density, which holds potential theoretical value for improving the electrical performance of AlGaN/GaN high electron mobility transistors.

Optoelectronic Synapse Based on 2D Electron Gas in Stoichiometry-Controlled Oxide Heterostructures.

Emulating synaptic functionalities in optoelectronic devices is significant in developing artificial visual-perception systems and neuromorphic photonic computing. Persistent photoconductivity (PPC) in metal oxides provides a facile way to realize the optoelectronic synaptic devices, but the PPC performance is often limited due to the oxygen vacancy defects that release excess conduction electrons without external stimuli. Herein, a high-performance optoelectronic synapse based on the stoichiometry-controlled LaAlO3/SrTiO3 (LAO/STO) heterostructure is developed. By increasing La/Al ratio up to 1.057:1, the PPC is effectively enhanced but suppressed the background conductivity at the LAO/STO interface, achieving strong synaptic behaviors. The spectral noise analyses reveal that the synaptic behaviors are attributed to the cation-related point defects and their charge compensation mechanism near the LAO/STO interface. The short-term and long-term plasticity is demonstrated, including the paired-pulse facilitation, in the La-rich LAO/STO device upon exposure to UV light pulses. As proof of concepts, two essential synaptic functionalities, the pulse-number-dependent plasticity and the self-noise cancellation, are emulated using the 5×5 array of La-rich LAO/STO synapses. Beyond the typical oxygen deficiency control, the results show how harnessing the cation stoichiometry can be used to design oxide heterostructures for advanced optoelectronic synapses and neuromorphic applications.

Stop Blaming Hopping Conduction in Nanocrystal Arrays, Use it for Active Photonics!

AbstractNanocrystals (NCs) are now established building blocks for photonic applications. However, their integration for optoelectronics has not yet reached the same level of maturity, in part due to the perceived bottleneck that is the inherent limited mobility resulting from hopping conduction. Significant efforts are made to improve this mobility, notably by tuning the particle surface chemistry to enable larger interparticle electronic coupling, and values of mobility of ≈10 cm2 V−1 s−1 have been achieved. It is acknowledged that this value remains significantly lower than those obtained in 2D electron gases but is on par with the mobility reported for vertical transport in epitaxially grown heterostructures with similar confinement energies. Since there appears to be limited perspectives for further increasing mobility values, a suggestion is made that efforts should instead be directed toward exploring the potential benefits offered by hopping conduction. One of these benefits is the bias dependence of the diffusion length, which plays a key role in designing bias‐reconfigurable optical responses for NC‐based devices. Some recent achievements in building bias‐activated devices will be reviewed and the essential criteria for designing future structures will be discussed. Ultimately, hopping conduction is an opportunity to generate new functionalities that low‐disorder materials would be unable to provide.

Low-frequency noise behaviors of quasi-two-dimensional electron systems based on complex oxide heterostructures

We report the low-frequency noise behaviors in quasi-two-dimensional (quasi-2D) electron systems based on complex oxide heterostructures. First, the surface 2D electron gas (2DEG) on SrTiO3 (STO) exhibits the 1/fα-type current power spectral density (PSD) with α∼1.39. The non-unity exponent α indicates the discrepancy between the depth distributions of electrons and oxygen vacancies in the STO substrate. Second, the amorphous LaAlO3/KTaO3 (LAO/KTO) interface, another quasi-2D electron system, shows Lorentzian components of PSD at a high-frequency region around 1 kHz, implying that the amorphous overlayer can provide additional shallow charge-trapping sites to the quasi-2D electrons in the crystalline KTO substrate. Lastly, ultrathin SrRuO3 (SRO) film grown on STO substrate exhibits the Lorentzian components of PSD at a low-frequency region around 200 Hz. The slight suppression of the fast charge trapping is attributed to the intrinsic band bending at the interface between film and substrate. These results will provide a guideline for understanding the defect-induced charge trapping and the relevant electron dynamics in the quasi-2D electron systems as well as the oxide-based electronic materials in general.

Electrically tunable birefringence in nanophotonic waveguide with 2D electron gas in semiconductor heterojunction

An electrically tunable birefringence in a nanophotonic waveguide based on MgZnO-CdZnO semiconductor heterojunction is numerically proposed. Electrical control is realized with two-dimensional electron gas (2DEG) at the interface of ZnO based heterojunction and is used to control the polarization. The waveguide is engineered to enhance interaction of guided optical mode(s) with 2DEG providing us with a wide tuning in modal birefringence. We perform numerical analysis of phase and polarization characteristics of 2DEG based nanophotonic waveguide. Electrical tuning of 0.0112 in modal birefringence is reported by varying the applied voltage from 0 Vto −10 V. The proposed device also exhibits voltage variable optical phase modulation in both TE and TM polarizations. The proposed work can be utilized in applications where integrated photonic devices with variable polarization control are desirable.

Electrochemistry at 2D and 3D nanoelectrodes: The interplay between interface kinetics and surface density of states

Heterogenous Electron Transfer (HET) at electrode-electrolyte interfaces depends strongly on the morphological features or geometry of the nanostructure used for modifying the electrode surface. A swift HET results in faster interface kinetics, which has significant impact on the development/calibration of electrochemical devices like biomolecular sensors, supercapacitors, batteries and electrochromic platforms. The interface electrochemistry depends strongly on the electronic Density of States (DOS) of electrode materials. Over the past years, the 2D electron gas nanomaterials - primarily graphene, Graphene Oxide (GO) and Reduced Graphene Oxide (RGO), have garnered significant interest in electrochemical applications due to promising DOS features. However, the electroanalytical dependency on DOS of 3D nanostructures such as Zinc Oxide Tetrapods (ZnOT) is yet unexplored. The current work focusses on a comparative electrochemical analysis of interface kinetics at RGO (2D) and ZnOT (3D) coated screen printed electrodes, with the intention of selecting the suitable material geometry. The analyses were performed using Cyclic Voltammetry (CV) and Electrochemical Impedance Spectroscopy (EIS). While the dependence of HET on DOS of RGO and ZnOT nanomaterials were studied using both DFT analysis and impedance-derived capacitance spectroscopy – the latter giving insights on quantum capacitance. It was observed that, the 2D RGO nanostructures exhibit higher surface DOS near the Fermi level, along with a high quantum capacitance (∼345 nF) as compared to 3D ZnOT (∼276 nF). This results in enhanced HET at the former, thereby indicating its suitability in developing futuristic electrochemical devices for various applications as desired.

A seven-channels microwave interferometer measurement system for measuring electron density distribution in hypervelocity transient plasma flow

When a hypersonic vehicle is flying in the near space region, the strong friction between the vehicle and the air can cause the air to ionize. As a result, the plasma sheath around the vehicle and the wake flow field behind it are formed, significantly affecting the electromagnetic (EM) scattering characteristics of the vehicle and resulting in the communication blackout. Therefore, the investigation of electron density distribution of the plasma sheath and wake flow field is of the great significance in the detection, communication, etc. of the hypersonic target. In order to meet the requirements for on-ground electron density distribution measurement of the transient plasma flow fields, the feasibility of measuring electron density profile with seven-channel microwave interferometer measurement system is demonstrated in this work. The wake plasma is modeled as a non-uniform multilayer medium, and the full-wave simulation software FEKO is used to calculate the phase-shift information of EM wave transmitting through non-uniform single-layered dielectric plate, uniform and non-uniform multi-layered dielectric plates. According to the simulation results, the dielectric constant of the substrate is retrieved and compared with the preset result. The retrieved results show that it is feasible that the dielectric constant distribution of non-uniform multi-layered dielectric plate is measured by utilizing the proposed microwave interferometer system with one transmission port and seven receptions. The amplitude-phase dynamic range analysis of the proposed Ka-band microwave measurement system is also carried out. The key technologies including large instantaneous amplitude-phase dynamic range and ray tracking inversion algorithm for two-dimensional (2-D) electron density distribution are also developed. Finally, the complete scheme of Ka-band seven-channel microwave interferometer measurement system is introduced. The system includes one lens antenna to generate the required plane wave and seven open-ended waveguide receiving antennas which are asymmetrically arranged to improve the lateral spatial resolution of the system. The system exhibits the amplitude dynamic range and the phase dynamic range of over 65 dB and 180° under 1 MHz IF bandwidth respectively. The plasma electron density distributions are measured by utilizing the proposed seven-channel microwave interferometer system in the ballistic range and multi-functional shock tube. The response time of the system is smaller than 1μs, satisfying the requirement for the two-dimensional distribution measurement of the transient plasma flow field generated by the ballistic range and multi-functional shock tube. The differences between experimental and numerical results are less than 0.5 order of magnitude, and the variations in transient plasma generated in both ballistic target and shock tube equipments are well detected. The measurement range of plasma electron density is 10<sup>10</sup>－10<sup>13</sup> cm<sup>–3</sup> and the spatial resolution is better than 15mm. In addition, the proposed ray tracing method is also used to invert the two-dimensional (2D) electron density distributions of both square layered model and cylindrical layered model under identical experimental state. The results are in consistent with each other, indicating that the proposed ray tracing method can be used in the inversion of 2D electron density distribution of plasma with different shapes.

A Protocol to Depict the Proteolytic Processes Using a Combination of Metal-Organic Materials (MOMs), Electron Paramagnetic Resonance (EPR), and Mass Spectrometry (MS).

Proteolysis is a critical biochemical process yet a challenging field to study experimentally due to the self-degradation of a protease and the complex, dynamic degradation steps of a substrate. Mass spectrometry (MS) is the traditional way for proteolytic studies, yet it is challenging when time-resolved, step-by-step details of the degradation process are needed. We recently found a way to resolve the cleavage site, preference/selectivity of cleavage regions, and proteolytic kinetics by combining site-directed spin labeling (SDSL) of protein substrate, time-resolved two-dimensional (2D) electron paramagnetic resonance (EPR) spectroscopy, protease immobilization via metal-organic materials (MOMs), and MS. The method has been demonstrated on a model substrate and protease, yet there is a lack of details on the practical operations to carry out our strategy. Thus, this protocol summarizes the key steps and considerations when carrying out the EPR/MS study on proteolytic processes, which can be generalized to study other protein/polypeptide substrates in proteolysis. Details for the experimental operation and cautions of each step are reported with figures illustrating the concepts. This protocol provides an effective approach to understanding the proteolytic process with the advantages of offering time-resolved, residue-level resolution of structural basis underlying the process. Such information is important for revealing the cleavage site and proteolytic mechanisms of unknown proteases. The advantage of EPR, probing the target substrate regardless of the complexities caused by the proteases and their self-degradation, offers a practically effective, rapid, and easy-to-operate approach to studying proteolysis. Key features • Combining protease immobilization, EPR, spin labeling, and MS experimental methods allows for the analysis of proteolysis process in real time. • Reveals cleavage site, kinetics of product generation, and preference of cleavage regions via time-resolved SDSL-EPR. • MS confirms EPR findings and helps depict the sequences and populations of the cleaved segments in real time. • The demonstrated method can be generalized to other proteins or polypeptide substrates upon proteolysis by other proteases.

Selective Damping of Plasmons in Coupled Two-Dimensional Systems by Coulomb Drag

The Coulomb drag is a many-body effect observed in proximized low-dimensional systems. It appears as emergence of voltage in one of them upon passage of bias current in another. The magnitude of drag voltage can be strongly affected by exchange of plasmonic excitations between the layers; however, the reverse effect of Coulomb drag on properties of plasmons has not been studied. Here, we study the plasmon spectra and damping in parallel two-dimensional systems in the presence of Coulomb drag. We find that Coulomb drag leads to selective damping of one of the two fundamental plasma modes of a coupled bilayer. For identical electron doping of both layers, the drag suppresses the acoustic plasma mode; while for symmetric electron-hole doping of the coupled pair, the drag suppresses the optical plasma mode. The selective damping can be observed both for propagating modes in extended bilayers and for localized plasmons in bilayers confined by source and drain contacts. The discussed effect may provide access to the strength of Coulomb interaction in 2d electron systems from various optical and microwave scattering experiments.

ADVANCEMENT IN NANOSCALE ELECTRONICS IN MOSFET

This research explores a novel approach for designing Cylindrical Surrounding Double-Gate (CSDG) MOSFETs with nanometer-scale precision through a layer- by-layer fabrication technique. Traditional top- down methods, such as photolithography and ion beam deposition, are widely used for semiconductor design but present challenges in creating complex heterostructures. In response, this study proposes an alternative method focusing on cylindrical structures to develop high- resolution morphological designs of CSDG MOSFETsThe research emphasizes the versatility of the proposed method, allowing the design of various cylindricalstructures with distinct properties, including periodic and non-periodic arrangements, symmetric andasymmetric configurations, and nanometer-scale gaps/dots. The focus is on the development of a symmetricCSDG MOSFET concerning the center core, providing valuable insights for fabricating structures over thecore of 2D Electron Gas (2DEG). Keywords— Cylindrical Surrounding Double-Gate MOSFET, Fabrication Steps Layer-by-Layer Approach Semiconductor Devices,Nanoscale Electronics ,Transistor Design ,Oxidation Process, Scalability, Simulation ,Oxidant Concentration.

Ultrathin Van der Waals Lanthanum Oxychloride Dielectric for 2D Field-Effect Transistors.

Downsizing silicon-based transistors can result in lower power consumption, faster speeds, and greater computational capacity, although it is accompanied by the appearance of short-channel effects. The integration of high-mobility 2D semiconductor channels with ultrathin high dielectric constant (high-κ) dielectric in transistors is expected to suppress the effect. Nevertheless, the absence of a high-κ dielectric layer featuring an atomically smooth surface devoid of dangling bonds poses a significant obstacle in the advancement of 2D electronics. Here, ultrathin van der Waals (vdW) lanthanum oxychloride (LaOCl) dielectrics are successfully synthesized by precisely controlling the growth kinetics. These dielectrics demonstrate an impressive high-κ value of 10.8 and exhibit a remarkable breakdown field strength (Ebd ) exceeding 10 MV cm-1 . Remarkably, the conventional molybdenum disulfide (MoS2 ) field-effect transistor (FET) featuring a dielectric made of LaOCl showcases an almost negligible hysteresis when compared to FETs employing alternative gate dielectrics. This can be attributed to the flawlessly formed vdW interface and excellent compatibility established between LaOCl and MoS2 . These findings will motivate the further exploration of rare-earth oxychlorides and the development of more-than-Moore nanoelectronic devices.