ADVANCEMENT IN NANOSCALE ELECTRONICS IN MOSFET

Abstract

This research explores a novel approach for designing Cylindrical Surrounding Double-Gate (CSDG) MOSFETs with nanometer-scale precision through a layer- by-layer fabrication technique. Traditional top- down methods, such as photolithography and ion beam deposition, are widely used for semiconductor design but present challenges in creating complex heterostructures. In response, this study proposes an alternative method focusing on cylindrical structures to develop high- resolution morphological designs of CSDG MOSFETsThe research emphasizes the versatility of the proposed method, allowing the design of various cylindricalstructures with distinct properties, including periodic and non-periodic arrangements, symmetric andasymmetric configurations, and nanometer-scale gaps/dots. The focus is on the development of a symmetricCSDG MOSFET concerning the center core, providing valuable insights for fabricating structures over thecore of 2D Electron Gas (2DEG). Keywords— Cylindrical Surrounding Double-Gate MOSFET, Fabrication Steps Layer-by-Layer Approach Semiconductor Devices,Nanoscale Electronics ,Transistor Design ,Oxidation Process, Scalability, Simulation ,Oxidant Concentration.