Cylindrical Surrounding Double-Gate RF MOSFET

Abstract

To reduce the size and increase the compactness in terms of area for the designed double-gate (DG) MOSFET as discussed in Chap. 3, we have analyzed and model the gate all around the DG MOSFET and in this chapter we have designed the cylindrical surrounding double-gate (CSDG) MOSFET and analyzed the design parameters of this MOSFET as a RF switch for the advanced wireless telecommunication systems. We have emphasized on the basics of the circuit parameters such as drain current, threshold voltage, resonant frequency, resistances at switch ON-state condition, capacitances, energy stored, cross talk, and switching speed required for the integrated circuit of the radio frequency subsystem of the CSDG MOSFET device and physical significance of these basic circuit parameters are also discussed. We have analyzed the CSDG MOSFET stored more energy (1.4 times) as compared to the cylindrical surrounding single-gate (CSSG) MOSFET. The ON-state resistance of CSDG MOSFET is half as compared to the DG MOSFET and SG MOSFET, which reveals that the current flow from source to drain in CSDG MOSFET is better than that of the DG MOSFET and SG MOSFET.