Abstract
This research work analyzes the sensitivity of Cylindrical Surrounding Double-Gate (CSDG) MOSFET to process variation using the Poisson equation’s analytical solution. This work has been verified with the numerical simulation. Also, the results obtained have been compared with a multi-gate device known as Cylindrical Surrounding Gate (CSG) MOSFETs. The lightly and heavily doped CSDG MOSFETs have been realized. Their immunity to parameter variation (channel length, Silicon thickness, and Random Dopant Fluctuations (RDFs)) has been compared to CSG MOSFET. This research work indicates that lightly doped CSDG MOSFET exhibits the slightest threshold variations than CSG MOSFETs. It confirms that the lightly doped CSDG MOSFET has better immunity to channel variation than CSG MOSFETs. This is due to its structure and inherent internal and external gate geometry, which offers greater control over the channel. However, RDFs become a dominating factor for heavily doped CSG and CSDG MOSFETs, leading to more dispersion in the threshold variations. Therefore, the CSDG MOSFET’s immunity to channel variation becomes deteriorated due to the larger surface-to-volume ratio. At this point, the CSG MOSFET tends to offer better immunity to process variation. Hence, the sensitivity of threshold voltage to parameter variations depends entirely on the RDFs, as the heavily doped devices are aggressively scaled to the nanometer regime.
Highlights
The downscaling of MOSFET has benefited the microelectronic industries for the last three decades because the shrinking of transistors below 100 nm enables millions of transistors to be placed on a single chip [1,2,3,4]
The multiple-gate devices such as SOI MOSFET, DoubleGate (DG) MOSFETs, Gate All Around (GAA) MOSFETs, Double FinFET (DFF) MOSFETs, and Cylindrical Surrounding Gate (CSG) MOSFETs are of better control than conventional bulk MOSFET devices because of their multi-gate structures [5,6,7,8]
Wang et al [12] have concluded that Random Dopant Fluctuation (RDF) process variation will severally affect the promising multi-gate device characteristics
Summary
The downscaling of MOSFET has benefited the microelectronic industries (manufacturing and applications) for the last three decades because the shrinking of transistors below 100 nm enables millions of transistors to be placed on a single chip [1,2,3,4]. Hong et al [17] have derived the complete general solution of nonlinear 1D undoped Poisson's equation in Cartesian and cylindrical coordinates by employing a special variable transformation method In this nanotechnology era (microchips), the replacement of diode with MOSFET improves the parameters of rectifier circuits in terms of switching speed, power consumption, bulky device size, and various heat or thermal losses.
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