Abstract
This paper investigates influence of material engineering on the performance parameter of (Cylindrical Surrounding Double Gate) CSDG MOSFET for improvement in performance. CSDG MOSFETs are evaluated for various parameters such as surface potential, electric field, drain on current, off current, transconductance, cut-off frequency and total gate input capacitance. The comparison of the gate material engineering on CSDG MOSFET has been done on the normal CSDG MOSFET incorporating dual materials at gate electrode, using the ATLAS 3D device simulator. The result shows that, with incorporation of dual materials on the gate electrode, the device performance parameter improves by shifting the higher electric field and minimum surface potential more towards the source side than in the normal CSDG MOSFET.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
