Abstract
Zinc diffusion using the open tube technique has been investigated at 40 torr and 400–500°C using a conventional MOVPE system. For the InP layer, hole concentrations are found to be lower for open tube Zn diffusion than for doping during growth. On the other hand, for the InGaAsP and InGaAs layers, the hole concentrations are found to be higher for diffusion than for doping. Hole concentration depends on the alloy composition of InGaAsP, and increases with increasing As and Ga compositions. This paper confirms that high hole concentrations (>1×1019 cm−3) can be obtained by Zn diffusion and that, open tube Zn diffusion gives variation in hole concentration and diffusion depth in a two-inch InP epi-wafer of less than ±12% and ±3%, respectively. We show that contacts can be fabricated by Ti/Pt/Au metallization to the p-InGaAsP (λPL:1.3 μm) layer, thus giving a low ohmic contact resistance (1×10−5 Ωcm2) when using open tube Zn diffusion.
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