Abstract
Abstract Zinc (Zn) diffusion in magnesium (Mg) doped AlGaInP based semiconductor laser diode epitaxial wafers has been investigated. After Zn diffusion, the hole concentration in the cladding was about one-fifth of previous value. In addition, Mg in AlInP layer was completely substituted by Zn and has moved towards the surface. Based on secondary ion mass spectrometric analysis, the interaction mechanism of Zn and Mg atoms was proposed.
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