Abstract
A two-dimensional particle model is used to simulate dynamically the charge transport process in a surface channel charge-coupled device. The effects on the transfer efficiency of substrate doping density, minority carrier density, a non-ohmic carrier mobility and lateral fields along the semiconductor-oxide interface are investigated. The results are compared with those of a one-dimensional analysis employing the depletion layer approximation and analysed in terms of charge motion due to fringing and self-induced electric fields and thermal diffusion.
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