Abstract
Abstract The increasing demand for ultraviolet (UV) imaging in extreme conditions, such as high temperatures and strong radiation, has spurred advancements in UV photodetector arrays. Traditional metal-semiconductor- metal (MSM) 4H-SiC UV photodetector array, with their planar structure and M×N electrode connections, face challenges in circuit design. Our research utilizes a vertical design for building the photodetector array, reducing the connections to just M+N, thereby simplifying the circuit design and signal processing. Utilizing semi-insulating 4H-SiC wafer and TiN electrodes, we developed an 8×8 vertical MSM photodetector array. Tested under a 365 nm light source at 10.5 mW/cm2 and a 5V bias, the array demonstrated low dark currents, high contrasts under illumination, and a 100% operational yield. With average photo current and dark currents of 1.56×10-8 A and 2.94×10-13 A, respectively, the average photo-to-dark current ratio (PDCR) exceeded 5×104 Our design effectively minimized sneak path currents and achieved a low crosstalk rate of 0.46%, enabling the capture of clear, high-contrast images. This marks a significant advancement in the application of MSM 4H-SiC UV photodetectors for imaging in extreme conditions.
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