Abstract
A tunnel-fluctuation model of the MIS admittance accounting for surface potential nonuniformity and tunnel trapping of charge carriers in the insulator is proposed. A trap distribution profile in the dielectric is considered: a uniform and an exponential type. For both types expressions for the normalized conductance G p/ ω of a MIS structure are obtained. A technique for determination of tunnel-fluctuation (standard deviation of the surface potential, trap depth in the insulator) and interface (time constant, capture cross section and spectral density of interface states) parameters of MIS structures combining the admittance method and nonequilibrium capacitance methods is proposed.
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