Abstract
In this paper, an optical model is presented to develop an electrical model for a silicon metal– i– n photodetector in the ultraviolet range of the spectrum. Closed form equations for the quantum efficiency and short circuit current density of the device are derived. It is shown that in typical silicon metal– i– n photodetectors, the response speed and the maximum attainable quantum efficiency are the most interactive parameters. In this regard, the maximum attainable quantum efficiency vs response time is obtained. Using the results, one can design the most efficient photodetector for the desired response speed. The sensitivity analysis and the optical bandwidth of the optimum device are also presented.
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