Abstract
The effect of the reduction of the peak field at the edges of reverse-biased p- n junctions by the resistive field plate (RFP) and variation lateral doping (VLD) is explained with the surface charges induced by their structures. Analytical solutions of the field profile under the RFP and under the VLD were found, from which the optimum doping profile of the VLD can also be found. The relations between the breakdown voltage and the surface depletion width for these two structures are proposed. The realization of the optimum VLD by an approach using multiple zones of the JTE is proved to be satisfactory.
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