Abstract
In this paper, the impact of three dimensional effect of multi-finger layout on Variation of Lateral Doping (VLD), the Variation of Lateral Thickness (VLT) and Reduced Surface Field (RESURF) LDMOS is explored. These devices are compared on the basis of breakdown voltage and on-state resistance. The simulation indicates that compared with VLT and conventional RESURF LDMOS, the breakdown voltage of VLD is insensitive to the three dimensional effect of multi-finger layout because of its unchanged electric field. However, the specific on-state resistance of central source case in VLD and VLT LDMOS has a remarkable increase due to the low current density.
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