Abstract
The temperature dependence of the avalanche current of a silicon p-n junction is calculated by considering the space-charge generation current and avalanche multiplication factor as functions of temperature. It is found that, as the temperature is increased with constant bias voltage, the avalanche current decreases to a minimum. The temperature at which this minimum occurs and the minimum value of the avalanche current are shown as functions of the original junction temperature within the range 150° K to 500°K. The avalanche current has a positive temperature coefficient above this minimum. Comparison with existing theories on the temperature coefficient of breakdown voltage shows qualitative agreement.
Published Version
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