Temperature dependence of avalanche gain in Al&lt;inf&gt;0.85&lt;/inf&gt;Ga&lt;inf&gt;0.15&lt;/inf&gt;As&lt;inf&gt;0.56&lt;/inf&gt;Sb&lt;inf&gt;0.44&lt;/inf&gt; APD

S Xie,J S Ng,C H Tan,X Zhou,S Zhang

doi:10.1109/iciprm.2016.7528783

Temperature dependence of avalanche gain in Al<inf>0.85</inf>Ga<inf>0.15</inf>As<inf>0.56</inf>Sb<inf>0.44</inf> APD

S Xie, J S Ng + Show 3 more

https://doi.org/10.1109/iciprm.2016.7528783

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Publication Date: Jun 1, 2016

Citations: 2

Affiliation: University of Sheffield

#Temperature Coefficient Of Breakdown Voltage #Temperature Dependence Of Dark Current + Show 8 more

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Abstract

We investigated the temperature dependence of dark current, avalanche gain and breakdown voltage in Al 0.85 Ga 0.15 As 0.56 Sb 0.44 (hereafter AlGaAsSb) avalanche photodiodes (APDs) with avalanche region widths, w = 90 and 178 nm. There is negligible band to band tunnelling currents and a very weak temperature dependence of gain observed in both didoes. The temperature coefficient of breakdown voltage, C bd = 0.41 mV/K in AlGaAsSb diode with w = 90 nm is the lowest value reported for different semiconductor materials with similar avalanche region width.

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