Abstract
We investigated the temperature dependence of dark current, avalanche gain and breakdown voltage in Al 0.85 Ga 0.15 As 0.56 Sb 0.44 (hereafter AlGaAsSb) avalanche photodiodes (APDs) with avalanche region widths, w = 90 and 178 nm. There is negligible band to band tunnelling currents and a very weak temperature dependence of gain observed in both didoes. The temperature coefficient of breakdown voltage, C bd = 0.41 mV/K in AlGaAsSb diode with w = 90 nm is the lowest value reported for different semiconductor materials with similar avalanche region width.
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